新規設計は非推奨
RoHS準拠
鉛フリー

2EDL8023G

EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G
EA.
在庫あり

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2EDL8023G
2EDL8023G
EA.

Product details

  • VCC UVLO (On)
    7 V
  • アイソレーション タイプ
    Functional levelshift JI (Junction Isolated)
  • コンフィギュレーション
    High-side and low-side
  • チャネル
    2
  • 伝搬遅延オフ
    45 ns
  • 伝搬遅延オン
    45 ns
  • 入力 Vcc
    8 V to 20 V
  • 出力電流 (Source)
    3 A
  • 出力電流 (Sink)
    6 A
  • 認定
    Industrial
  • 電圧クラス
    120 V
OPN
2EDL8023GXUMA1
製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 N/A
包装サイズ 6000
包装形態 TAPE & REEL
水分レベル 2
モイスチャーパッキン DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
EA. 在庫あり

製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 -
包装サイズ 6000
包装形態 TAPE & REEL
水分レベル 2
モイスチャーパッキン DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.

機能

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

利点

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

ドキュメント

デザイン リソース

開発者コミュニティ

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