not for new design
RoHS Compliant
Lead-free

2EDL8023G

EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G
Data Sheet
package
ea.
in stock

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2EDL8023G
2EDL8023G
ea.
Data Sheet

Product details

  • Channels
    2
  • Configuration
    High-side and low-side
  • Input Vcc
    8 V to 20 V
  • Isolation Type
    Functional levelshift
  • Output Current (Source)
    3 A
  • Output Current (Sink)
    6 A
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    45 ns
  • Turn On Propagation Delay
    45 ns
  • VCC UVLO (On)
    7 V
  • Voltage Class
    120 V
OPN
2EDL8023GXUMA1
Product Status not for new design
Infineon Package
PG-VDSON-8
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-VDSON-8
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.

Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Documents

Documents

Design resources

Partner solutions

Developer community

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