IAUCN04S7N012

概要

Infineon introduces its latest OptiMOS™ 7 40 V power MOS technology in the 5x6 mm2 SS08 leadless package with highest quality level and robustness for automotive applications

A portfolio of 16 products (RDS (on) max from 0,4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market

特長

  • OptiMOS™ 7 power MOSFET for automotive applications
  • Very low Ron*A
  • High Avalanche capability
  • High SOA ruggedness
  • Fast switching times (turn on/off)
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Low package resistance and inductance
  • Excellent thermal performance
  • Industry's lowest FOM (RDS (on) x Qg)

利点

  • High power efficiency
  • Increased design ruggedness for easy design
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design for Automotive
  • High quality FE&BE production for Automotive

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