IRL60B216

60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
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IRL60B216
IRL60B216
データシート

Product details

  • ID (@25°C) max
    305 A
  • Ptot max
    375 W
  • Qgd
    80 nC
  • QG (typ @4.5V)
    172 nC
  • RDS (on) (@10V) max
    1.9 mΩ
  • RDS (on) (@4.5V) max
    2.2 mΩ
  • RthJC max
    0.4 K/W
  • Tj max
    175 °C
  • VDS max
    60 V
  • VGS(th)
    1.7 V
  • VGS max
    20 V
  • パッケージ
    TO-220
  • 予算価格€/ 1k
    1.89
  • 実装
    THT
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

機能

  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

利点

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

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