Overview

Ultra-fast switching 650 V and 1200 V power transistors such as CoolSiC™ MOSFETs typically are best driven by gate driver ICs with integrated galvanic isolation. These gate drivers incorporate the most important key features and parameters typically recommended for silicon carbide MOSFETs driving such as wide output-side supply range, extended CMTI capability, active Miller clamp, and last but not least input-to-output galvanic isolation.

Key features
  • Tight propagation delay matching
  • Precise input filters
  • Wide output-side supply range
  • Negative gate voltage capability
  • Extended CMTI capability
  • Active Miller clamp
  • DESAT protection
  • UVLO
  • Input-to-output galvanic isolation

Products

About

2300 V functional isolation

EiceDRIVER™ isolated gate drivers are based on magnetically-coupled coreless transformer (CT) technology, which provide signal transfer across the galvanic isolation. Thanks to the CT technology, we offer function, basic, and reinforce isolation, with UL 1577 (VISO = 5.7 kV) and IEC 60747-17 (VIORM = 1767 V) certification. The functional isolation reaches up to 2300 V, which is suitable for the CoolSiC™ 2 kV  in 1500 V DC application. All products certified according to IEC 60747-17 tested for 20 years lifetime with safety factor.

Prevent parasitic turn-on

EiceDRIVER™ SiC MOSFET gate driver ICs offers 40 V maximum output supply voltage to enable bipolar power supply with negative gate voltage for SiC MOSFET. It also offers active Miller clamp and Clamp driver is a feature with extra protection. The Clamp driver feature is available in 1ED3491MC12M and 1ED3890MC12M, which is highly-recommended for high power application. 

2300 V functional isolation

EiceDRIVER™ isolated gate drivers are based on magnetically-coupled coreless transformer (CT) technology, which provide signal transfer across the galvanic isolation. Thanks to the CT technology, we offer function, basic, and reinforce isolation, with UL 1577 (VISO = 5.7 kV) and IEC 60747-17 (VIORM = 1767 V) certification. The functional isolation reaches up to 2300 V, which is suitable for the CoolSiC™ 2 kV  in 1500 V DC application. All products certified according to IEC 60747-17 tested for 20 years lifetime with safety factor.

Prevent parasitic turn-on

EiceDRIVER™ SiC MOSFET gate driver ICs offers 40 V maximum output supply voltage to enable bipolar power supply with negative gate voltage for SiC MOSFET. It also offers active Miller clamp and Clamp driver is a feature with extra protection. The Clamp driver feature is available in 1ED3491MC12M and 1ED3890MC12M, which is highly-recommended for high power application. 

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