Solutions for gate driver and power switches
お客様のスイッチ、システム、アプリケーションに完璧に適合するゲートドライバをお選びください。
あらゆるスイッチにはドライバが必要であり、あらゆるドライバにはスイッチが必要です。インフィニオンは、パワー半導体市場のリーダーとして、お客様のアプリケーションには、システムの完全な調和が重要であることを理解しています。インフィニオンおよびインターナショナル・レクティファイアーは、数十年にわたるアプリケーションの専門知識と技術開発により、MOSFET、ディスクリートIGBT、IGBTモジュール、SiC MOSFET、GaN HEMTなどのシリコンおよびワイドバンドギャップパワーデバイス向けのゲートドライバICのポートフォリオを生み出してきました。
インフィニオンは、ガルバニック絶縁されたゲートドライバ、車載適合のゲートドライバ、200V、500~700V、1200Vレベルシフトゲートドライバ、非絶縁ローサイドドライバの優れた製品ファミリーを提供しています。インフィニオンのゲートドライバとともに、パワースイッチおよびモジュールを使った代表的なアプリケーションを以下にご紹介します。
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Inverter (<3.5 kW) |
200 | Half-bridge | IRS2007S/M | with VCC & VBS UVLO | |
600 | Single high-side | IRS2127S | with FAULT-RPT, OCP | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT |
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High and low-side | IRS2186(4)S | with high current | |||
Three-phase | 6EDL04I06PT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IR2136S/J | OCP, EN, FAULT-RPT | ||||
1200 | Half-bridge | IR2214SS | with DESAT, Synchronization, soft shutdown, FAULT-RPT |
TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B/2B module |
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Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<7.5 kW) |
1200 | Single high-side | 1EDC20I12AH | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, VISO = 2500 V(rms) for 1 min (1EDC only), active Miller clamp (MH/MF only), separate sink/source output (AH only) | CoolSiC™ SiC MOSFET TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B module Easy 1B/2B 3-level |
1EDC30I12MH | |||||
1EDI30I12MF | |||||
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2ED020I12-FI | Functional isolation on high-side, comparator, OPAMP, SD | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<30 kW) |
1200 | Single high-side | 1ED020I12-F2 | Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST | CoolSiC™ SiC MOSFET EasyPIM™ 1B/2B module EasyPACK™ 1B module |
Dual high-side | 2ED020I12-F2 | ||||
Single high-side | 1ED020I12-BT | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/ μs CMTI, active Miller clamp, DESAT, short circuit clamping, two level turn off, FAULT-RST | |||
Inverter (<200 kW) | 1200 | Single high-side | 1EDI60H12AH | Functional isolation, ≥ 100 kV/μs CMTI, Separate sink/source output, short circuit clamping, 125-ns propagation delay |
CoolSiC™ SiC MOSFET module EconoPACK™ 3 module EconoDUAL™ 3 module |
1EDS20I12SV | Reinforced isolation, VDE 0884-10, VIORM = 1420 V, VIOTM = 8000 V; UL 1577; VISO = 5000 V(rms); soft shutdown, DESAT, FAULT-RPT, OCP, slew rate control, TLTO | CoolSiC™ SiC MOSFET module EasyPACK™ 1B module Easy 1B/2B 3-level EconoPIM™ 2/3 module |
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1ED020I12-B2 | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST, TLTO | ||||
PFC | 25 | Single low-side | 1ED44176N01F | integrated overcurrent protection (±5%), fault reporting, and enable functionality |
TRENCHSTOP™ IGBT+Diode Rapid Diode CoolMOS™ MOSFET CIPOS™ Mini |
IRS44273L | small, easy-to-use package |
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20 | 1EDN8511B | fast propagation delay and high drive Dual current | |||
20 | Dual low-side | 2EDN8524F | |||
25 | IRS4427S | industry proven | |||
SMPS (<3 kW) |
20 | Dual low-side | 2EDN8524F | non-inverting driver with CMOS inputs | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
600 | High and low-side | IRS2186(4)S | with high current | ||
Brake chopper (<3.5 kW) |
25 | Single low-side | IRS44273L | non-inverting, with CMOS inputs in small 5 pin SOT-23 package | TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2 |
1200 | Single high-side | 1EDI05I12AF | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, separate sink/source output (AF only), active Miller clamp (MF only) | ||
1EDI10I12MF |
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
On-board charger & DC-DC converter | 20 | Dual low-side | AUIRB24427S | Booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC input signals | Automotive IGBT Discretes CoolMOS™ CPA CoolMOS™ CFDA |
100 | Half bridge | AUIR2085S | Enable half-bridge DC-bus converters for 48 V distributed systems with reduced component count and board space , programmable switching frequency < 500 kHz, adjustable dead-time | ||
200 | Single low-side | AUIRS1170S | Secondary side high speed synchronous rectification controller, ccm operation with SYNC function, > 500 kHz, cycle by cycle MOT check | ||
600 | High and low-side | AUIRS2113S | Tolerant to negative transient voltage, UVLO | ||
AUIRS2191S | Tolerant to negative transient voltage, UVLO, matched propagation delay | ||||
Auxiliary drives (fans, pumps, HVAC, heat pump, PTC heater) | 600 | High and low-side | AUIRS21814S | Tolerant to negative transient voltage, UVLO , matched propagation delay | Automotive IGBT Discretes |
Three-phase | AUIRS2336S | Drives up to six IGBT/MOSFET power devices, OCP, over-temperature shutdown input, advanced input filter, integrated dead-time protection, shoot-through protection, UVLO | |||
700 | Single high-side | AUIR2114SS* | UVLO on both supply lines (with hysteresis), desaturation detection on both sides, with internal biasing resistor, soft shutdown function and pin | Automotive IGBT Discretes AUIRG4PH50S, AUIRGDC0250 |
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Wireless in-cabin phone charging | 600 | High and low-side | AUIRS2301S | Tolerant to negative transient voltage, UVLO, matched propagation delay | Automotive MOSFET |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Main inverter | 400 | Single high-side | 1EBN1001AE | IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC Input signals | Automotive IGBT Discretes |
1200 | 1EDI2001AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO | |||
1EDI2002AS | |||||
1EDI2010AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO, integrated ADC |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
DC-DC (<3 kW) | 600 | High and low-side | IRS2113S/M | with SD | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
IRS2186(4)S | with high current | ||||
1200 | Single high-side | 1EDI05I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
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DC-DC (<30 kW) | 1200 | Single high-side | 1EDC20H12AH | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 125-ns propagation delay | CoolSiC™ SiC MOSFET |
1EDI40I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | ||||
DC-DC (<60 kW) | 650 | Dual high-side | 2EDS8265H | Reinforced isolation, 150 kV/μs CMTI, EN | CoolMOS™ MOSFET IPW65R041CFD, IPW65R080CFD, IPW60R018CFD7, IPW60R040CFD7, IPW60R070CFD7, IPW60R090CFD7, IPL60R060CFD7 |
1200 | Single high-side | 1EDC60H12AH | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamp, 125-ns propagation delay | CoolSiC™ SiC MOSFET module EasyPACK™ 1B/2B module EconoPIM™ 2 module EconoPACK™ 2/3/4 module EconoDUAL™ 3 module |
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1EDS20I12SV | Reinforced isolation, VDE 0884-10, VIORM = 1420 V, VIOTM = 8000 V; UL1577, VISO = 5000 V(rms), slew rate control, soft shutdown, DESAT, FAULT-RPT, OCP, TLTO | ||||
PFC | 650 | Dual high-side | 2EDF7275F | Galvanically isolated | TRENCHSTOP™ 5 H5 CoolMOS™ MOSFET |
2EDF7175F | |||||
1200 | Single high-side | 1EDI40I12AH | Functional isolation, ≥ 100 kV/μs separate sink/source output, short circuit clamping | ||
801 | Single low-side | 1EDN8550B | Non-inverting signal Low-side driver with truly differential inputs, especially for kelvin source 4 pin device in PFC boost | ||
20 | Single low-side | 1EDN8511B | Non-inverting single low-side driver with CMOS inputs in small 6-pin SOT-23 package | ||
25 | Dual low-side | IRS4427S | Non-inverting dual low-side driver with CMOS inputs |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
IRS44273L | Non-inverting single low-side driver with CMOS inputs in small 5 pin SOT-23 package |
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20 | 1EDN8511B | Non-inverting single low-side driver with CMOS inputs in small 6 pin SOT-23 package | |||
25 | Dual low-side | IRS4427S | Non-inverting dual low-side driver with CMOS inputs | ||
20 | 2EDN8524F | Non-inverting dual low-side driver with CMOS inputs | |||
HS buck (<100 W) | 100 | Single high-side | IRS10752L | Driver in small 6 pin SOT-23 package | CoolMOS™ MOSFET IPP80R280P7, IPP80R360P7, IPP80R450P7, IPP80R600P7, IPP80R750P7, IPP80R900P7, IPP80R1K2P7, IPP80R1K4P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R3K3P7, IPD80R4K5P7 |
200 | IRS20752L | ||||
600 | IRS2117S | Driver in DSO-8 package | |||
IRS25752L | Driver in small 6 pin SOT-23 package | ||||
HB(LLC) (<200 W) | 650 | High and low-side | 2ED2106S06* | Infineon SOI technology with integrated bootstrap diode | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
600 | IRS2101S | Driver in DSO-8 package | |||
650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | ||
600 | IRS2153(1)DS | Self-oscillating, Integrated bootstrap FET, SD and SD-PROG | |||
Sync buck | 200 | High and low-side | IR2010S | Driver in DSO-8 package | CoolMOS™ MOSFET IPP80R280P7, IPP80R360P7, IPP80R450P7, IPP80R600P7, IPP80R750P7, IPP80R900P7, IPP80R1K2P7, IPP80R1K4P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K4P7, IPD80R4K5P7 |
600 | Half-bridge | 2EDL05N06PF | Infineon SOI technology with integrated bootstrap diode |
* Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Motor inverter /BLDC (<2 kW) | 200 | High and low-side | IRS2005S/M | with VCC & VBS UVLO | StrongIRFET™ OptiMOS™ 3/5
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IRS2011S | |||||
Half-bridge | IRS2008S/M | ||||
IRS2007S/M | |||||
Three-phase | 6EDL04N02PR | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
6ED003L02-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | ||||
Motor inverter (<15 kW) | 650 | Dual high-side | 2EDF7275F | Functional isolation, disable | |
2EDF7175F | |||||
600 | High and low-side | IRS21867S | with Low UVLO (6 V/5.5 V) | ||
IRS2301S | in DSO-8 package | ||||
Half-bridge | 2EDL05N06PF | Infineon SOI technology with integrated bootstrap diode | |||
IRS2302S | with SD | ||||
Three-phase | 6ED003L06-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | |||
6EDL04N06PT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
Motor inverter (<30 kW) | 600 | Half-bridge | IRS2183S | in DSO-8 package | |
2EDL23N06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
1200 | Single high-side | 1EDI60(I,N)12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | TRENCHSTOP™ Rapid diode CoolMOS™ MOSFET CIPOS™ Mini |
IRS44273L | non-inverting single low-side driver with CMOS inputs in small SOT-23 package | ||||
20 | 1EDN8511B | ||||
25 | Dual low-side | IRS4427S | non-inverting dual low-side driver with CMOS inputs | ||
20 | 2EDN8524F | ||||
600 | Half-bridge | 2EDL23(I,N)06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||
Inverter/ compressor/ drive/ fans | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | TRENCHSTOP™ IGBT+Diode TRENCHSTOP™ IGBT6 CoolMOS™ MOSFET |
600 | IRS2890DS | Integrated bootstrap FET, FAULT-RPT, OCP | |||
2EDL23(I,N)06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
2EDL05(I,N)06PF | Infineon SOI technology with integrated bootstrap diode | ||||
Three-phase | 6EDL04(I,N)06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IRS2334S/M | in DSO-20 300mil, VQFN-28 package | ||||
6ED003L06-F2 | Infineon SOI technology with OCP, EN, FAULT-RPT | ||||
SMPS (100 W) | 20 | Dual low-side | 2EDN8524F | Non-inverting dual low-side driver with CMOS inputs | CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 |
25 | IRS4427S | ||||
650 | High and low-side | 2ED2106S06* | Infineon SOI technology with integrated bootstrap diode | ||
600 | IRS2186(4)S | with high current | |||
Half-bridge | IRS2153(1)DS | Self-oscillating, Integrated bootstrap FET, SD and SD-PROG |
*coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Solar inverter Boost / SMPS | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | CoolMOS™ MOSFET IPW65R019C7, IPW65R065C7, IPW65R095C7, IPW65R190C7 |
IRS44273L | non-inverting low-side driver with Dual CMOS inputs | ||||
Dual low-side | IRS4427S | ||||
20 | 2EDN8524F | ||||
1200 | Single high-side | 1EDI20N12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 125-ns propagation delay | CoolSiC™ SiC MOSFET module EasyPACK™ 1B/2B module family CoolMOS™ MOSFET |
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1EDC60H12AH | |||||
Solar micro inverter DC-AC (<200 W) | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | OptiMOS™ 5 CoolMOS™ MOSFET |
600 | IR2114SS | DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
2EDL05N06PJ | Infineon SOI technology with integrated bootstrap diode | ||||
650 | Dual high-side | 2EDF7275F | Functional isolation | ||
1200 | Single high-side | 1EDI20N12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping, 120-ns propagation delay | ||
Solar string / central inverter DC-AC (>200 W) | 1EDI60(I,N)12AF | CoolSiC™ SiC MOSFET CoolSiC™ SiC MOSFET module TRENCHSTOP™ IGBT+Diode EasyPACK™ 1B/2B module EconoPACK™ 2 module EconoDUAL™ 3 module EconoPack™+ module |
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1ED020I12-F2 | Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT short circuit clamping, FAULT-RST | ||||
Dual high-side | 2ED020I12-F2 | ||||
High and low-side | IR2213S | with SD and Separate power supply | |||
Half-bridge | IR2214SS | with DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP (±5%), EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode |
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Heat pump inverter (<2 kW) | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | |
600 | 2EDL05I06PF | ||||
Three-phase | 6EDL04I06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
Heat pump inverter (>2 kW) | 1200 | Single high-side | 1EDI20I12AF | Functional isolation, ≥ 100 kV/μs CMTI, separate sink/source output, short circuit clamping | CoolSiC™ SiC MOSFET module TRENCHSTOP™ IGBT+diode EasyPACK™ 1B/2B module EconoPIM™ 2 module |
High and low side | IR2213S | with SD and separate power supply | |||
Half-bridge | IR2214SS | with DESAT, Synchronization, SD-SOFT, FAULT-RPT | |||
Three-phase | 6ED2230S12T* | Infineon 1200-V SOI technology with integrated bootstrap diode, OCP (±5%), EN, FAULT-RPT | TRENCHSTOP™ IGBT+diode |
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | TRENCHSTOP™ Rapid Diode CoolMOS™ MOSFET |
IRS44273L | Non-inverting low-side driver with CMOS inputs | ||||
20 | 1EDN8511B | ||||
25 | Dual low-side | IRS4427S | |||
20 | 2EDN8524F | ||||
Battery powered Motor Inverter / BLDC (<1 kW) | 801 | Single low-side | 1EDN7550B | Single-channel gate driver IC with truly differential inputs | |
200 | High and low side | IRS2005S/M | with VCC & VBS UVLO, and shutdown (IRS2008 only) | StrongIRFET™ OptiMOS™ 5 |
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IRS2011S | |||||
Half-bridge | IRS2008S/M | ||||
IRS2007S/M | |||||
Three-phase | 6EDL04N02PR | Infineon SOI technology with integrated bootstrap diode (6EDL only), OCP, EN, FAULT-RPT | |||
6ED003L02-F2 | |||||
Inverter / Compressor / Drive | 650 | Half-bridge | 2ED2304S06F | Infineon SOI technology with integrated bootstrap diode | TRENCHSTOP™ IGBT+Diode TRENCHSTOP™ IGBT6 TRENCHSTOP™ RC-H5 |
600 | IRS2890DS | Integrated bootstrap FET, FAULT-RPT, OCP | |||
IRS2183S | in DSO-8 package | ||||
2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||||
2EDL05(I,N)06PF | Infineon SOI technology with integrated bootstrap diode | ||||
High and low side | IRS2113S/M | with SD | |||
IRS2186(4)S | with high current | ||||
Three-phase | 6EDL04(I,N)06xT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IRS2334S/M | in DSO-20 300 mil, VQFN-28 package |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
* Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
PFC | 801 | Single low-side | 1EDN8550B | Non-inverting signal low side driver with truly differential inputs, especially for kelvin source 4 pin device in PFC boost | CoolMOS™ 7 series |
25 | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | |||
20 | 1EDN8511B | non-inverting signal low-side driver with CMOS inputs | |||
Dual low-side | 2EDN8524F | non-inverting dual low-side driver with CMOS inputs | |||
Totem pole PFC | 650 | Single high-side | 1EDF5673F | Functional isolation | CoolGaN™ |
Dual high-side | 2EDF7275F | CoolMOS™ 7 series | |||
600 | Half-bridge | 2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | ||
Vienna rectifier | 650 | Dual high-side | 2EDF8275F | Functional isolation, 150 kV/μs CMTI, EN | |
Sync rectifier | 25 | Single low-side | 1ED44176N01F | OCP (±5%), EN, FAULT-RPT, programmable fault clear time | |
201 | 1EDN7550B | Non-inverting low-side driver with truly differential inputs | |||
20 | Dual low-side | 2EDN7523F | Non-inverting dual low-side driver with CMOS inputs | ||
200 | IR11688S | Dual synchronous rectification control IC | |||
250 | Dual high-side | 2EDF7275K | Functional isolation, 150 kV/μs CMTI, Disable | ||
Single high-side | 1EDF5673K | Functional isolation | CoolGaN™ | ||
LLC/ZVS PSFB | 650 | Single high-side | 1EDS5663H | Reinforced isolation, 200 kV/μs CMTI, EN | |
Dual high-side | 2EDS8265H | Reinforced isolation, 150 kV/μs CMTI, EN | CoolMOS™ 7 series | ||
600 | High and low-side | IRS2186(4)S | with high current |
Note 1: For special cases as 1EDNx550 (1EDN-TDI), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).
*Coming soon
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.