Solutions for gate driver and power switches
お客様のスイッチ、システム、アプリケーションに完璧に適合するゲートドライバをお選びください。
あらゆるスイッチにはドライバが必要であり、あらゆるドライバにはスイッチが必要です。インフィニオンは、パワー半導体市場のリーダーとして、お客様のアプリケーションには、システムの完全な調和が重要であることを理解しています。インフィニオンおよびインターナショナル・レクティファイアーは、数十年にわたるアプリケーションの専門知識と技術開発により、MOSFET、ディスクリートIGBT、IGBTモジュール、SiC MOSFET、GaN HEMTなどのシリコンおよびワイドバンドギャップパワーデバイス向けのゲートドライバICのポートフォリオを生み出してきました。
インフィニオンは、ガルバニック絶縁されたゲートドライバ、車載適合のゲートドライバ、200V、500~700V、1200Vレベルシフトゲートドライバ、非絶縁ローサイドドライバの優れた製品ファミリーを提供しています。インフィニオンのゲートドライバとともに、パワースイッチおよびモジュールを使った代表的なアプリケーションを以下にご紹介します。
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Inverter (<3.5 kW) |
200 | Half-bridge | IRS2007S/M | with VCC & VBS UVLO | |
600 | Single high-side | IRS2127S | with FAULT-RPT, OCP | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2EDL23I06PJ | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT |
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High and low-side | IRS2186(4)S | with high current | |||
Three-phase | 6EDL04I06PT | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | |||
IR2136S/J | OCP, EN, FAULT-RPT | ||||
1200 | Half-bridge | IR2214SS | with DESAT, Synchronization, soft shutdown, FAULT-RPT |
TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B/2B module |
|
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<7.5 kW) |
1200 | Single high-side | 1EDC20I12AH | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, VISO = 2500 V(rms) for 1 min (1EDC only), active Miller clamp (MH/MF only), separate sink/source output (AH only) | CoolSiC™ SiC MOSFET TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module EasyPACK™ 1B module Easy 1B/2B 3-level |
1EDC30I12MH | |||||
1EDI30I12MF | |||||
Three-phase | 6ED2230S12T* | Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Half-bridge | 2ED020I12-FI | Functional isolation on high-side, comparator, OPAMP, SD | TRENCHSTOP™ IGBT+Diode EasyPIM™ 1B/2B module |
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Inverter (<30 kW) |
1200 | Single high-side | 1ED020I12-F2 | Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST | CoolSiC™ SiC MOSFET EasyPIM™ 1B/2B module EasyPACK™ 1B module |
Dual high-side | 2ED020I12-F2 | ||||
Single high-side | 1ED020I12-BT | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/ μs CMTI, active Miller clamp, DESAT, short circuit clamping, two level turn off, FAULT-RST | |||
Inverter (<200 kW) | 1200 | Single high-side | 1EDI60H12AH | Functional isolation, ≥ 100 kV/μs CMTI, Separate sink/source output, short circuit clamping, 125-ns propagation delay |
CoolSiC™ SiC MOSFET module EconoPACK™ 3 module EconoDUAL™ 3 module |
1EDS20I12SV | Reinforced isolation, VDE 0884-10, VIORM = 1420 V, VIOTM = 8000 V; UL 1577; VISO = 5000 V(rms); soft shutdown, DESAT, FAULT-RPT, OCP, slew rate control, TLTO | CoolSiC™ SiC MOSFET module EasyPACK™ 1B module Easy 1B/2B 3-level EconoPIM™ 2/3 module |
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1ED020I12-B2 | Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, VIOTM = 6000 V; UL 1577 certified, VISO = 3750 V(rms) for 1 min, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST, TLTO | ||||
PFC | 25 | Single low-side | 1ED44176N01F | integrated overcurrent protection (±5%), fault reporting, and enable functionality |
TRENCHSTOP™ IGBT+Diode Rapid Diode CoolMOS™ MOSFET CIPOS™ Mini |
IRS44273L | small, easy-to-use package |
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20 | 1EDN8511B | fast propagation delay and high drive Dual current | |||
20 | Dual low-side | 2EDN8524F | |||
25 | IRS4427S | industry proven | |||
SMPS (<3 kW) |
20 | Dual low-side | 2EDN8524F | non-inverting driver with CMOS inputs | TRENCHSTOP™ IGBT+Diode CoolMOS™ MOSFET |
600 | High and low-side | IRS2186(4)S | with high current | ||
Brake chopper (<3.5 kW) |
25 | Single low-side | IRS44273L | non-inverting, with CMOS inputs in small 5 pin SOT-23 package | TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2 |
1200 | Single high-side | 1EDI05I12AF | Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, separate sink/source output (AF only), active Miller clamp (MF only) | ||
1EDI10I12MF |
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
On-board charger & DC-DC converter | 20 | Dual low-side | AUIRB24427S | Booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC input signals | Automotive IGBT Discretes CoolMOS™ CPA CoolMOS™ CFDA |
100 | Half bridge | AUIR2085S | Enable half-bridge DC-bus converters for 48 V distributed systems with reduced component count and board space , programmable switching frequency < 500 kHz, adjustable dead-time | ||
200 | Single low-side | AUIRS1170S | Secondary side high speed synchronous rectification controller, ccm operation with SYNC function, > 500 kHz, cycle by cycle MOT check | ||
600 | High and low-side | AUIRS2113S | Tolerant to negative transient voltage, UVLO | ||
AUIRS2191S | Tolerant to negative transient voltage, UVLO, matched propagation delay | ||||
Auxiliary drives (fans, pumps, HVAC, heat pump, PTC heater) | 600 | High and low-side | AUIRS21814S | Tolerant to negative transient voltage, UVLO , matched propagation delay | Automotive IGBT Discretes |
Three-phase | AUIRS2336S | Drives up to six IGBT/MOSFET power devices, OCP, over-temperature shutdown input, advanced input filter, integrated dead-time protection, shoot-through protection, UVLO | |||
700 | Single high-side | AUIR2114SS* | UVLO on both supply lines (with hysteresis), desaturation detection on both sides, with internal biasing resistor, soft shutdown function and pin | Automotive IGBT Discretes AUIRG4PH50S, AUIRGDC0250 |
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Wireless in-cabin phone charging | 600 | High and low-side | AUIRS2301S | Tolerant to negative transient voltage, UVLO, matched propagation delay | Automotive MOSFET |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Main inverter | 400 | Single high-side | 1EBN1001AE | IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC Input signals | Automotive IGBT Discretes |
1200 | 1EDI2001AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO | |||
1EDI2002AS | |||||
1EDI2010AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO, integrated ADC |
Application | Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
DC-DC
|
600 V | High and Low Side
|
IRS2186S | 4/4 A | High current for high power and fast switching frequency | |
650 V | 2ED2110S06M | 2.5/2.5 A | Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | |||
2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN | ||||
1200 V | 1-ch isolated | 1EDI20N12AF | 4/3.5 A | EiceDRIVER™ 1ED Compact with separate output | ||
High and Low Side | IR2213S | 2/2.5 A | Shutdown and Separate power supply | |||
Half-Bridge | IR2214SS | 2/3 A | DESAT, soft-off, two stage turn on, fault reporting, Synchronization | |||
DC-DC |
1200 V | 1-ch isolated | 10/9.4 A | EiceDRIVER™ 1ED Compact with separate output | ||
2-ch isolated | 2EDR8259H* | 4/8 A | EiceDRIVER™ 2EDi with reinforced isolation | |||
2300 V | 1-ch isolated | 1ED3122MC12H | 10/9 A | EiceDRIVER™ X3 Compact with Miller clamp | ||
DC-DC |
1ED3124MC12H | 13.5/14 A | EiceDRIVER™ X3 Compact with separate output |
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1ED3241MC12H | 18/18 A | EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
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1ED3321MC12N | 6/8.5 A | EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
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1ED3890MC12M | 7.5/11 A | EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp | ||||
Single-end boost PFC |
25 V | 1-ch non-isolated | 1EDN8511B | 4/8 A | Separate output, 19 ns propagation delay | CoolMOS™ MOSFET P7 650 V CoolSiC™ 1200V CoolSiC™ |
1ED44171N01B* | 2.6/2.6 A | Enable, programmable fault clear time, UVLO | ||||
1ED44175N01B | 2.6/2.6 A | Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing | ||||
1ED44176N01F | 0.8/1.75 A | Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM | ||||
IRS44273L | 1.5/1.5 A | Additional OUT pin | ||||
200 V | 1EDN8550B | 4/8 A | True differential inputs, with ± 80 V static ground-shift robustness | |||
Interleaved boost PFC |
22 V | 2-ch non-isolated | 2EDN8534F | 5/5 A | 2 ns delay matching, 19 ns propagation delay | |
24 V | 2ED24427N01F | 10/10 A | Enable, Low RDSON outputs, thermal pad | |||
25 V | IRS4427S | 2.3/3.3 A | Matched propagation delay | |||
Totem pole PFC |
650 V | High and Low Side | 2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN | 600 V CoolMOS™ CFD7 MOSFET |
1200 V | 2-ch isolated | 2EDB8259F* | 4/8 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||
2EDB8259Y* | 5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||||
Vienna rectifier |
22 V | 2-ch non-isolated | 2EDN7534F | 5/5 A | 2 ns delay matching, 19 ns propagation delay | 650 V CoolMOS™ C7 MOSFET IPP65R045C7, IPW65R019C7, IPL65R070C7 |
1200 V | 1-ch isolated | 1EDB6275F | 5/9 A | EiceDRIVER™ 1EDB with basic isolation (3kV UL 1577) | ||
1EDI60N12AF | 10/9.4 A | EiceDRIVER™ 1ED Compact with separate output |
*Coming soon
PFC | 22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 IPN70R360P7S, IPD70R360P7S, IPA70R360P7S, IPAN70R360P7S IPN80R600P7, IPD80R280P7, IPP804280P7, IPA80R280P7 |
25 V | 1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
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1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
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IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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200 V | 1-ch non-isolated |
1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
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22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
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24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
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25 V | IRS4427S | 2.3/3.3 A |
Matched propagation delay |
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HS buck
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100 V | Single high-side |
0.16/0.24 A |
UVLO on low-side and high-side |
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200 V | 1-ch non-isolated |
4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness | |||
Single high-side |
IRS20752L | 0.16/0.24 A |
UVLO on low-side and high-side |
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600 V | Single high-side |
IRS25752L | 0.16/0.24 A |
UVLO on low-side and high-side |
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Fly-back | 22 V | 1-ch non-isolated |
1EDN7511B | 4/8 A |
2 ns delay matching, 19 ns propagation delay |
|
200 V | 1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
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HB(LLC) |
600 V | Half-Bridge | IRS2153DS | 0.18/0.26 A |
Self-oscillating, Integrated bootstrap FET, Shutdown |
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650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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HB(LLC) |
1200 V | 1-ch isolated |
1EDI60N12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
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Half-Bridge |
2ED020I12-FI | 1.5/2.5 A |
EiceDRIVER™ Enhanced 2ED-FI with OPAMP and comparator (isolation only on the high side) |
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2-ch isolated |
2EDB8259F* |
5/9 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB8259Y* |
5/9 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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Sync buck |
200 V | High and Low Side |
IR2010S | 3/3 A | Shutdown | IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 IMZA65R027M1H, IMZA65R107M1H |
600 V | Half-Bridge |
0.36/0.7 A | Infineon SOI, integrated BSD |
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650 V | Half-Bridge |
0.36/0.7 A | Infineon SOI, integrated BSD |
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1200 V | 1-ch isolated |
1EDB9275F | 5.4/9.8 A | EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577) |
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2-ch isolated |
2EDB8259F* |
5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB8259Y* |
5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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Application | Driver Voltage class [V] | Configuration | Driver | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Motor Inverter <3kW (<48 V Battery) |
60 V |
Three-Phase |
6EDL7141 | 1.5/1.5 A |
Fully programmable, integrated power supplies and current sense amplifiers, slew rate control, protection features |
60 V StrongIRFET™ |
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad |
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Three-Phase | 6ED2742S01Q* |
1/2 A |
SOI, integrated BSD, PMU, 100% DC w. trickle charge pump, programmable OCP w. select gain, CS amp, RFE | |||
200 V | Three-Phase | 6EDL04N02PR | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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High and Low Side |
IRS2005S | 0.29/0.6 A |
UVLO, MTON/OFF,max=50ns, 3.3V-15V input |
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High and Low Side |
IRS2011S | 1/1 A |
UVLO, MTON/OFF,max=20ns, 3.3V-5V input |
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600 V | High and Low Side |
2EDL05N06PF | 0.36/0.7 A |
SOI, UVLO, MTON/OFF,max=60ns, 3.3-15V input, BSD |
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Three-Phase | 6EDL04N06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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Single high-side | IRS21271S | 0.2/0.42 A |
UVLO, OCP, 3-15V input, fault reporting |
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Motor Inverter 3-10kW (48-96 V Battery) |
160 V | High and Low Side |
2ED2738S01G* |
4/8 A |
SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad |
IPT010N08NM5, IPTG011N08NM5, IPTC014N08NM5, IPB015N08N5, IRLS4030, IRF100B201 |
200 V | 1-ch non-isolated | 4/8 A |
True differential inputs, with ± 80 V static & ± 150V dynamic ground-shift robustness, separate SRC/SNK output pins |
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500 V | High and Low Side |
IRS2110S | 2/2 A |
MTON/OFF,max=10ns, Separate power and logic ground, SD pin, 3-20V input |
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600 V | High and Low Side |
2EDL23N06PJ | 2.3/2.8 A |
3.3V-15V input, -100V transient , PGND, SOI, integrated BSD, OCP, UVLO, Enable, fault reporting |
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High and Low Side | IRS21867S | 4/4 A |
3-5V input, MTON/OFF,max=35ns, UVLO, neg. transient robust |
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650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient |
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High and Low Side |
2ED2181S06J | 2.5/2.5 A |
SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient, separate logic and power ground |
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Motor Inverter |
1200 V | 1-ch isolated |
1EDB8275F | 5/9 A |
3kV basic isolation w. CT technology, (UL1577), separate SRC/SNK output, UVLO (4 types), CMTI > 300 V/ns |
IPB107N20N3G, IPTG111N20NM3FD |
1-ch isolated |
1EDI60N12AF | 10/9.4 A |
Short Circuit Clamping, Active Shut-Down, UVLO, separate SRC/SNK output , 3.3-15V input |
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2-ch isolated |
2EDB8259F* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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2-ch isolated | 2EDB8259Y* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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2300 V | 1-ch isolated | 1ED3121MC12H | 5.5/5.5 A | EiceDRIVER™ X3 Compact with separate output | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Single-end boost PFC |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
IKWH30N65WR6, IKW40N65ET7 IDW60C65D1, IDW40E65D1E |
25 V | 1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
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1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
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IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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Interleaved boost PFC |
22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
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24 V | 2-ch non-isolated |
2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
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25 V | 2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
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Totem pole PFC |
600 V | Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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High and Low Side |
2ED2110S06M | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM |
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High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
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Motor Inverter/ Compressor/ Drives/ Fans |
600 V | Half-Bridge | 2EDL05I06PF | 0.36/0.7 A |
Infineon SOI, integrated BSD |
IPD60R1K0PFD7S, IPN60R600PFD7S |
Half-Bridge | 2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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Three-Phase |
6EDL04I06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting | |||
Three-Phase |
IRS2334M | 0.2/0.35 A |
Space saving QFN package, matched propagatin delay |
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Half-Bridge | IRS2890DS | 0.22/0.48 A |
Integrated bootstrap FET, OCP, fault reporting |
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650 V | High and Low Side |
2ED2106S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, HIN, LIN |
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Half-Bridge | 2ED2108S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, HIN, LIN |
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High and Low Side |
2ED21814S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD, separate VSS/COM |
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Half-Bridge | 2ED2182S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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Non-Motor Inverter |
25 V | 1-ch non-isolated |
1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
TRENCHSTOP™ IGBT Reverse Conducting IHW20N135R5, IHW60N65R |
650 V | Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD, separate VSS/COM |
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1200 V | 1-ch isolated |
1EDI20I12AF | 4/3.5 A |
EiceDRIVER™ 1ED Compact with separate output |
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25 V | 2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
CoolMOS™ MOSFET P7 |
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600 V | High and Low Side |
IRS2106S | 0.29/0.6 A |
Independent UVLOs |
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Half-Bridge | IRS2153DS | 0.18/0.26 A |
Self-oscillating, Integrated bootstrap FET, Shutdown |
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650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A | Infineon SOI, integrated BSD |
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Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
3-phase string inverter |
1200 V | 2-ch isolated |
2ED020I12-F2 | 2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
IMW120R030M1, IMW120R090M1H IDW20G1205B, IDW40G120C5B IKW40N120H3, IKW40N65ES5, IKW40N65H5 CoolSiC™ SiC Hybrid booster module DF80R12W2H3F_B11, DF160R12W2H3F_B11 CoolSiC™ SiC MOSFET booster module DF11MR12W1M1_B11, DF23MR12W1M1_B11 CoolSiC™ SiC MOSFET 2-Level module FF8MR12W2M1_B11, FS45MR12W1M1_B11 EasyPACK™ IGBT module |
2EDF6258X* |
4/8 A |
EiceDRIVER™ 2EDi with functional isolation |
||||
2EDF9275F | 4/8 A |
EiceDRIVER™ 2EDi with Functional isolation, Disable |
||||
2EDR8259H* |
4/8 A |
EiceDRIVER™ 2EDi with reinforced isolation |
||||
2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
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1-ch isolated |
1ED3241MC12H | 18/18 A |
EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
|||
1-ch isolated |
1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
|||
1-ch isolated |
1ED3491MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp |
|||
1-phase string inverter |
22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
OptiMOS™ MOSFET BSC093N15NS5, IPB044N15N5, IPP051N15N5 CoolMOS™ MOSFET |
24 V | 2-ch non-isolated |
2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
||
25 V | 1-ch non-isolated |
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||
2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
|||
1-ch non-isolated |
IRS44273L | 1.5/1.5 A |
Additional OUT pin |
|||
650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
||
Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM |
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1200 V | 1-ch isolated |
1EDB9275F | 5.4/9.8 A |
EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577) |
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1-ch isolated |
1EDI60N12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
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2-ch isolated |
2EDB9259Y* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB7259Y* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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High and Low Side |
IR2213S | 2/2.5 A |
Shutdown and Separate power supply |
|||
Half-Bridge | IR2214SS | 2/3 A |
DESAT, soft-off, two stage turn on, fault reporting, Synchronization |
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2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
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Micro Inverter |
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
|
Half-Bridge | 2ED2748S01G* |
4/8 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
|||
200 V | High and Low Side |
IRS2011S | 1/1 A |
60 ns prop delay, VCC & VBS UVLO |
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600 V | Half-Bridge | 2EDL05N06PJ | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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650 V | Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
|||
1200 V | 2-ch isolated |
2EDS7165H | 1/2 A |
EiceDRIVER™ 2EDi with reinforced isolation |
||
Power Optimizer |
200 V | 1-ch non-isolated |
1EDN8550B | 4/8 A | True differential inputs, with ± 80 V static ground-shift robustness |
|
High and Low Side |
IRS2011S | 1/1 A | 60 ns prop delay, VCC & VBS UVLO |
|||
250 V | High and Low Side |
2EDF5215F* | 5/9 A | 7 V UVLO, functional isolation and 37 ns propagation delay | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Motor Inverter/BLDC |
60 V | Three-Phase | 6EDL7141 | 1.5/1.5 A |
Fully programmable, integrated power supplies and current sense amplifiers |
|
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
||
Three-Phase |
6ED2742S01Q* |
1/2 A |
Infineon SOI, integrated BSD, PMU, trickle charge pumps, programmable OCP, and current sense amp, RFE |
|||
Half-Bridge | 2ED2748S01G* |
4/8 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
|||
200 V | 1-ch non-isolated |
1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
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Three-Phase | 0.165/0.375 A |
Infineon SOI, OCP, Enable, fault reporting |
||||
Three-Phase | 6EDL04N02PR | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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High and Low Side |
IRS2005S | 0.29/0.6 A |
VCC & VBS UVLO, matched propagation delay |
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Half-Bridge | IRS2007S | 0.29/0.6 A |
VCC & VBS UVLO, matched propagation delay |
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High and Low Side |
IRS2011S | 1/1 A |
60 ns prop delay, VCC & VBS UVLO |
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600 V | Half-Bridge |
2EDL05N06PF | 0.36/0.7 A |
Infineon SOI, integrated BSD |
||
Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|||
Three-Phase | 6EDL04N06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|||
High and Low Side |
IRS21867S | 4/4 A |
High current for high power and fast switching frequency with low UVLO (6 V/5.5 V) |
|||
Battery Charger |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
CoolMOS™ MOSFET |
2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay | |||
25 V | 1-ch non-isolated
|
1ED44171N01B* |
2.6/2.6 A | Enable, programmable fault clear time, UVLO |
||
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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IRS44273L | 1.5/1.5 A | Additional OUT pin |
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600 V | High and Low Side |
IRS2186S | 4/4 A | High current for high power and fast switching frequency | ||
650 V | 2ED2106S06F | 0.29/0.7 A | Infineon SOI, integrated BSD, HIN, LIN | |||
2ED2110S06M | 2.5/2.5 A | Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | ||||
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | ||||
Application | Driver Voltage class [V] | Configuration | Driver | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Single-end boost PFC |
22 V | 1-ch non-isolated |
1EDN7511B | 4/8 A |
Separate output, 19 ns propagation delay |
IPL60R065C7, IPZ60R017C7, IPZ60R099C7 |
25 V | 1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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200 V | 1EDN8550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
|||
Totem pole PFC |
600 V | Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
IPP60R070CFD7, IPT60R035CFD7, IPT60R145CFD7 |
650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
||
1200 V | 1-ch isolated |
1EDF5673F | 4/8 A |
EiceDRIVER™ 1EDi with functional isolation for GaN HEMTs |
||
1200 V | 2-ch isolated |
2EDB8259F* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
||
Vienna rectifier |
22 V | 2-ch non-isolated |
2EDN7534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
IPP60R040C7, IPW60R017C7, IPB60R040C7 |
1200 V | 2-ch isolated
|
2EDB8259Y* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
||
1200 V | 2EDR8259H* |
4/8 A |
EiceDRIVER™ 2EDi with reinforced isolation |
|||
LLC/ZVS PSFB | 600 V | High and Low Side |
IRS2186S | 4/4 A |
High current for high power and fast switching frequency |
|
1200 V | 1-ch isolated |
4/8 A |
EiceDRIVER™ 1EDi with Reinforced isolation for GaN HEMTs, Disable |
|||
1200 V | 2-ch isolated |
2EDR8259X* |
5/9 A | EiceDRIVER™ 2EDi with reinforced isolation |
||
Sync rectifier |
22 V | 1-ch non-isolated |
1EDN7512G | 4/8 A |
Separate output, 19 ns propagation delay |
40 V OptiMOS™ 6 MOSFET BSC059N04LS6, ISC012N04LM6, IST007N04NM6 BSC016N06NS, ISC009N06LM5, BSZ040N06LS5 BSC019N08NS5, BSZ070N08LS5, IPT010N08NM5 |
2-ch non-isolated
|
2EDN7534G | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
|||
24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
|||
25 V | 1-ch non-isolated |
1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||
120 V | High and Low Side |
2EDL8024G | 4/6 A |
<6ns delay matching, VDD/VHB UVLO |
||
Half-Bridge | 2EDL8124G3C* |
4/6 A | <6ns delay matching, VDD/VHB UVLO |
|||
200 | 1-ch non-isolated |
1EDN7116G* |
2/2 A |
GaN driver with truly differential input & adjustable negative charge pump |
||
1EDN7116U* |
2/2 A |
GaN driver with truly differential input |
||||
1EDN7550U | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
||||
2-ch non-isolated |
1/4 A |
Dual synchronous rectification control IC |
||||
1200 V | 2-ch isolated |
2EDB8259F* | 5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Battery DC-DC |
600 V | Half-Bridge | 2EDL05I06PJ | 0.36/0.7 A |
Infineon SOI, integrated BSD |
|
2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
||||
650 V | High and Low Side |
2ED2110S06M | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM |
||
High and Low Side |
2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN |
|||
1200 V
|
1-ch isolated |
1EDI20I12AF | 4/3.5 A |
EiceDRIVER™ 1ED Compact with separate output |
||
High and Low Side |
IR2213S | 2/2.5 A |
Shutdown and Separate power supply |
|||
Battery DC-DC |
1-ch isolated |
1EDI60I12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
||
Mains inverter |
600 V | Half-Bridge
|
2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|
IR2114SS | 2/3 A |
DESAT, soft-off, two stage turn on, fault reporting, Synchronization |
||||
High and Low Side |
IRS2186S | 4/4 A |
High current for high power and fast switching frequency |
|||
650 V | Half-Bridge |
2ED21834S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, /LIN, separate VSS/COM |
||
1200 V | 1-ch isolated |
1EDI20I12MF | 4.4/4.1 A |
EiceDRIVER™ 1ED Compact with Miller clamp |
||
1EDI60I12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
||||
2-ch isolated |
2ED020I12-F2 | 2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
EasyPACK™ 3-level NPC 1 module FS3L30R07W2H3F_B11, FS3L50R07W2H3F_B11 EasyPACK™ 3-level NPC 2 module F3L75R12W1H3_B11, F3L150R12W2H3_B11 CoolSiC™ MOSFET 3-level NPC 2 module
FS50R12KT4_B11, FS150R12PT4 |
||
2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
||
1ED3241MC12H | 18/18 A |
EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
||||
1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
||||
1ED3491MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp |
||||
1ED3890MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp |
||||
PFC/SMPS |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
|
2-ch non-isolated
|
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
|||
24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
|||
25 V | 1-ch non-isolated |
1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
||
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||||
1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
||||
2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
|||
1-ch non-isolated |
IRS44273L | 1.5/1.5 A |
Additional OUT pin |
|||
Active Bridge Rectifier |
1200 V | 2-ch isolated |
2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
IMW120R030M1, IMW120R090M1H CoolSiC™ MOSFET 3-level NPC 2 module |
|
2300 V | 1-ch isolated
|
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
||
2300 V | 1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
|||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.