Solutions for gate driver and power switches

概要

お客様のスイッチ、システム、アプリケーションに完璧に適合するゲートドライバをお選びください。

あらゆるスイッチにはドライバが必要であり、あらゆるドライバにはスイッチが必要です。インフィニオンは、パワー半導体市場のリーダーとして、お客様のアプリケーションには、システムの完全な調和が重要であることを理解しています。インフィニオンおよびインターナショナル・レクティファイアーは、数十年にわたるアプリケーションの専門知識と技術開発により、MOSFET、ディスクリートIGBT、IGBTモジュール、SiC MOSFET、GaN HEMTなどのシリコンおよびワイドバンドギャップパワーデバイス向けのゲートドライバICのポートフォリオを生み出してきました。

インフィニオンは、ガルバニック絶縁されたゲートドライバ、車載適合のゲートドライバ、200V、500～700V、1200Vレベルシフトゲートドライバ、非絶縁ローサイドドライバの優れた製品ファミリーを提供しています。インフィニオンのゲートドライバとともに、パワースイッチおよびモジュールを使った代表的なアプリケーションを以下にご紹介します。

詳細

Drives

Electronic speed-control systems for energy and performance gains

Our gate driver ICs are the experts choice. With the breadth and depth of the portfolio, customers can quickly design and build efficient and robust systems for motor drive application.

Sub applications

Commercial sewing machines
Elevators/escalators
Fans and pumps (PFC, inverter)
General purpose drives
Heavy duty drives (<200 kW)
Servo and stepper motors
Automatic gate and door opening system (inverter <1 kW)
Commercial, construction & agricultural vehicles (CAV, i.e. E-Bus)
Forklift trucks (hydraulic pump inverter, motor inverter)
Commercial air-conditioner (CAC compressor, fan <17 kW)
Robotics

Circuit diagram of the drive applications

Recommended gate drivers for Drives

Application	Driver Voltage class [V]	Configuration	Driver	Description	Suitable switches
Inverter (<3.5 kW)	200	Half-bridge	IRS2007S/M	with V_CC & V_BS UVLO	StrongIRFET™ IRF135B203, IRF135SA204 OptiMOS™ 3 IPB072N15N3, IPB042N10N3 G, IPB107N20N3 G
	600	Single high-side	IRS2127S	with FAULT-RPT, OCP	TRENCHSTOP™ IGBT+Diode IKD10N60RF, IKA15N65ET6, IKW30N60DTP, IKB40N65ES5 EasyPIM™ 1B/2B module FP10R06W1E3_B11, FP15R06W1E3_B11, FB20R06W1E3, FP20R06W1E3_B11, FB30R06W1E3 EasyPACK™ 1B module FS20R06W1E3_B11
		Half-bridge	2EDL23I06PJ	Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT
		High and low-side	IRS2186(4)S	with high current
		Three-phase	6EDL04I06PT	Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT
		Three-phase	IR2136S/J	OCP, EN, FAULT-RPT
	1200	Half-bridge	IR2214SS	with DESAT, Synchronization, soft shutdown, FAULT-RPT	TRENCHSTOP™ IGBT+Diode IKW25N120T2, IKW40N120T2, IKQ75N120CT2 EasyPIM™ 1B/2B module FP15R12W1T4_B11, FP15R12W2T4 EasyPACK™ 1B/2B module FS25R12W1T4_B11 Easy 1B/2B 3-Level module F3L15R12W2H3_B27 EconoPIM™ 2 module FP25R12KT4_B15
	1200	Three-phase	6ED2230S12T*	Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT	TRENCHSTOP™ IGBT+Diode IKW08T120, IKW15N120T2 EasyPIM™ 1B/2B module FP15R12W1T4, FP15R12W1T4_B11, FP15R12W2T4
Inverter (<7.5 kW)	1200	Single high-side	1EDC20I12AH	Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, V_ISO = 2500 V(rms) for 1 min (1EDC only), active Miller clamp (MH/MF only), separate sink/source output (AH only)	CoolSiC™ SiC MOSFET IMZ120R045M1 - 4-pin TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2 EasyPIM™ 1B/2B module FP25R12W2T4_B11, FP35R12W2T4_B11 EasyPACK™ 1B module FS25R12W1T4_B11, FS50R12W2T4_B11 Easy 1B/2B 3-level F3L15R12W2H3_B27 EconoPIM™ 2 module FP25R12KT4_B15, FP50R12KT4G EconoPACK™ 2/3 module FS50R12KT4_B15
			1EDC30I12MH
			1EDI30I12MF
		Three-phase	6ED2230S12T*	Infineon SOI technology with integrated bootstrap diode, OCP, EN, FAULT-RPT	TRENCHSTOP™ IGBT+Diode IKW40N120T2 EasyPIM™ 1B/2B module FP15R12W1T4, FP15R12W1T4_B11, FP15R12W2T4
		Half-bridge	2ED020I12-FI	Functional isolation on high-side, comparator, OPAMP, SD	TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2 EasyPIM™ 1B/2B module FP15R12W1T4_B11, FP15R12W2T4, FP25R12W2T4_B11 EasyPACK™ 1B module FS25R12W1T4_B11 Easy 1B/2B 3-level F3L15R12W2H3_B27
Inverter (<30 kW)	1200	Single high-side	1ED020I12-F2	Functional isolation, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST	CoolSiC™ SiC MOSFET IMZ120R045M1 – 4-pin EasyPIM™ 1B/2B module FP15R12W1T4_B11, FP25R12W2T4_B11 EasyPACK™ 1B module FS25R12W1T4_B11, FS50R12W2T4_B11 EconoPIM™ 2 module FP25R12KT4_B15, FP50R12KT4G EconoPACK™ 2/3 module FS50R12KT4_B15
		Dual high-side	2ED020I12-F2
		Single high-side	1ED020I12-BT	Basic isolation, VDE 0884-10 certified, VIORM = 1420 V, V_IOTM = 6000 V; UL 1577 certified, V_ISO = 3750 V(rms) for 1 min, ≥ 100 kV/ μs CMTI, active Miller clamp, DESAT, short circuit clamping, two level turn off, FAULT-RST
Inverter (<200 kW)	1200	Single high-side	1EDI60H12AH	Functional isolation, ≥ 100 kV/μs CMTI, Separate sink/source output, short circuit clamping, 125-ns propagation delay	CoolSiC™ SiC MOSFET module FF11MR12W1M1_B11, FF23MR12W1M1_B11 EconoPIM™ FP150R12KT4(P)_B11 EconoPACK™ 3 module FS150R12KT4_B11 EconoDUAL™ 3 module FF300R12ME4_B11 EconoPACK™+ module FS300R12OE4 , FS450R12OE4 34 mm module FF150R12RT4 62 mm module FF300R12KE4
			1EDS20I12SV	Reinforced isolation, VDE 0884-10, V_IORM = 1420 V, V_IOTM = 8000 V; UL 1577; VISO = 5000 V(rms); soft shutdown, DESAT, FAULT-RPT, OCP, slew rate control, TLTO	CoolSiC™ SiC MOSFET module FF11MR12W1M1_B11, FF23MR12W1M1_B11 EasyPACK™ 1B module FS50R12W2T4_B11, FS75R12W2T4_B11 Easy 1B/2B 3-level FS3L50R07W2H3F_B11, F3L75R12W1H3_B11, F3L100R12W2H3_B11 EconoPIM™ 2/3 module FP75R12KT4_B15, FP100R12KT4(P)_B11 EconoPACK™ 2/3/4 module FS75R12KT4_B15, FS100R12KT4G(P)_B11 34 mm module FF50R12RT4, FF100R12RT4
			1ED020I12-B2	Basic isolation, VDE 0884-10 certified, V_IORM = 1420 V, V_IOTM = 6000 V; UL 1577 certified, V_ISO = 3750 V(rms) for 1 min, ≥ 100 kV/μs CMTI, active Miller clamp, DESAT, short circuit clamping, FAULT-RST, TLTO
PFC	25	Single low-side	1ED44176N01F	integrated overcurrent protection (±5%), fault reporting, and enable functionality	TRENCHSTOP™ IGBT+Diode IKW30N65H5, IKW40N65WR5, IKFW40N60DH3E, IKFW50N60DH3E Rapid Diode IDW30E65D1, IDW60C65D1 CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7 CIPOS™ Mini IFCM15S60GD, IFCM15P60GD, IFCM10P60GD, IFCM10S60GD
	25		IRS44273L	small, easy-to-use package
	20		1EDN8511B	fast propagation delay and high drive Dual current
	20	Dual low-side	2EDN8524F	fast propagation delay and high drive Dual current
	25	Dual low-side	IRS4427S	industry proven
SMPS (<3 kW)	20	Dual low-side	2EDN8524F	non-inverting driver with CMOS inputs	TRENCHSTOP™ IGBT+Diode IKP30N65F5, IKB40N65EF5 CoolMOS™ MOSFET IPP60R060P7, IPP60R080P7, IPP60R099P7, IPP60R120P7, IPP60R180P7, IPP60R280P7, IPP60R360P7, IPW65R019C7, IPW65R045C7, IPW65R065C7, IPW65R095C7, IPW65R125C7, IPW65R190C7
SMPS (<3 kW)	600	High and low-side	IRS2186(4)S	with high current
Brake chopper (<3.5 kW)	25	Single low-side	IRS44273L	non-inverting, with CMOS inputs in small 5 pin SOT-23 package	TRENCHSTOP™ IGBT+Diode IKW40N120T2, IKQ50N120CT2, IKQ75N120CT2
	1200	Single high-side	1EDI05I12AF	Functional isolation, ≥ 100 kV/μs CMTI, short circuit clamping, separate sink/source output (AF only), active Miller clamp (MF only)
	1200	Single high-side	1EDI10I12MF

^{*Coming soon}

Electric vehicles and hybrid vehicles

In (hybrid) electric vehicles, efficiency is a key success factor for extending the range of the vehicle, which also applies to auxiliary applications. Our automotive-qualified gate driver ICs help simplify design, and optimize performance in all MOSFETs and IGBTs driving stages.

Sub applications

On-board charger
HV/LV DC-DC converter
Auxiliary loads
Wireless in-cabin phone charging

Circuit diagram of the driver in electric vehicles and hybrid verhicles

Application	Driver Voltage class [V]	Configuration	Driver	Description	Suitable switches
On-board charger & DC-DC converter	20	Dual low-side	AUIRB24427S	Booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC input signals	Automotive IGBT Discretes AIGW40N65H5, AIGW40N65F5, AIKW40N65DH5, AIKW40N65DF5, AIGW50N65H5, AIGW50N65F5, AIKW50N65DH5, AIKW50N65DF5, AUIRGP35B60PD, AUIRGP35B60PD-E, AUIRGP50B60PD1, AUIRGP65G40D0, AUIRGF65G40D0, AUIRGP66524D0, AUIRGF66524D0 CoolMOS™ CPA IPB60R099CPA, IPP60R099CPA, IPW60R045CPA, IPI60R099CPA CoolMOS™ CFDA IPD65R420CFDA, IPB65R110CFDA, IPP65R110CFDA, IPW65R048CFDA EasyPACK™ 1B/2B FS75R07W2E3
	100	Half bridge	AUIR2085S	Enable half-bridge DC-bus converters for 48 V distributed systems with reduced component count and board space , programmable switching frequency < 500 kHz, adjustable dead-time
	200	Single low-side	AUIRS1170S	Secondary side high speed synchronous rectification controller, ccm operation with SYNC function, > 500 kHz, cycle by cycle MOT check
	600	High and low-side	AUIRS2113S	Tolerant to negative transient voltage, UVLO
	600	High and low-side	AUIRS2191S	Tolerant to negative transient voltage, UVLO, matched propagation delay
Auxiliary drives (fans, pumps, HVAC, heat pump, PTC heater)	600	High and low-side	AUIRS21814S	Tolerant to negative transient voltage, UVLO , matched propagation delay	Automotive IGBT Discretes AUIRG4BC30U-S, AUIRG4PC40S-E, AUIRGB4062D1, AUIRGSL4062D1, AUIRGS4062D1, AUIRGP4062D, AUIRGP4062D-E, AUIRGP4063D, AUIRGP4063D-E, AUIRGR4045D, AUIRGU4045D, AUIRGP4066D1, AUIRGS30B60K, AUIRGSL30B60K, AIKB20N60CT, AIKP20N60CT, AIKW20N60CT, AIKW30N60CT, AIKW50N60CT EasyPACK™ 1B/2B FS75R07W2E3
	600	Three-phase	AUIRS2336S	Drives up to six IGBT/MOSFET power devices, OCP, over-temperature shutdown input, advanced input filter, integrated dead-time protection, shoot-through protection, UVLO
	700	Single high-side	AUIR2114SS*	UVLO on both supply lines (with hysteresis), desaturation detection on both sides, with internal biasing resistor, soft shutdown function and pin	Automotive IGBT Discretes AUIRG4PH50S, AUIRGDC0250
Wireless in-cabin phone charging	600	High and low-side	AUIRS2301S	Tolerant to negative transient voltage, UVLO, matched propagation delay	Automotive MOSFET IPG20N04S4L-11A, IPZ40N04S5L-4R8, IPZ40N04S5L-7R4

Electric vehicles and hybrid vehicles – main inverter

In vehicles with an electric drive train, the inverter controls the electric motor, and is a key component in the car, as it determines driving behavior. Regardless of whether the motor is synchronous, synchronous or brushless DC, the inverter is controlled by an integrated PCB, which should be designed to minimize switching losses and maximize thermal efficiency, as the range of the vehicle is directly related to the efficiency of the main inverter. The Infineon EiceDRIVER™ gate driver family includes single and dual-channel automotive IGBT driver ICs that provide galvanic isolation and bidirectional signal transmission. These products are ideal for the main inverter systems in automotive applications where efficiency, space savings and monitoring functions are priorities. Our automotive-qualified gate driver ICs help simplify design and optimize performance in all MOSFETs and IGBTs driving stages.

Diagram of the main inverter of the e-vehicles

Application	Driver Voltage class [V]	Configuration	Driver	Description	Suitable switches
Main inverter	400	Single high-side	1EBN1001AE	IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC Input signals	Automotive IGBT Discretes AIKW75N60CT, AIKQ100N60CT, AIKQ120N60CT, AUIRGPS4070D0 HybridPACK™ Family FS200R07A02E3_S6, FS820R08A6P2B, FS820R08A6P2LB, FS400R07A1E3_S7, FS200R07A1E3
	1200		1EDI2001AS	On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO
			1EDI2002AS
			1EDI2010AS	On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO, integrated ADC

EV Charging

As electro-mobility increasingly becomes part of our daily lives, there is a growing need for more efficient charging solutions. Fast EV-charging stations equipped with powerful DC EV chargers are today’s answer to the challenge. DC EV chargers are an attractive choice, as they allow much faster charging than the standard AC EV chargers that many EV owners use. Today, a DC charger with 150 kW can supply an EV with a 200 km charge in around 15 minutes. As fast-charging and battery technologies continue to evolve and improve, experts anticipate that charging time will drop even further.

The unique expertise in e-mobility and power supplies makes Infineon the natural partner for advancing DC electric vehicle charging in terms of efficiency, performance, optimal cost and innovation.

Recommended gate drivers for EV charging

Application	Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules
DC-DC (<22 kW)	600 V	High and Low Side	IRS2186S	4/4 A	High current for high power and fast switching frequency	CoolMOS™ MOSFET IPW60R018CFD7, IPW60R037CSFD CoolSiC™ MOSFET IMW65R027M1H, IMZ120R030M1H
	650 V		2ED2110S06M	2.5/2.5 A	Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM
	650 V		2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
	1200 V	1-ch isolated	1EDI20N12AF	4/3.5 A	EiceDRIVER™ 1ED Compact with separate output
		High and Low Side	IR2213S	2/2.5 A	Shutdown and Separate power supply
		Half-Bridge	IR2214SS	2/3 A	DESAT, soft-off, two stage turn on, fault reporting, Synchronization
DC-DC (<50 kW)	1200 V	1-ch isolated	1EDI60N12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output	CoolMOS™ MOSFET IPW60R018CFD7, IPW60R037CSFD CoolSiC™ Module F4-23MR12W1M1P_B11, FF45MR12W1M1_B11
	1200 V	2-ch isolated	2EDR8259H*	4/8 A	EiceDRIVER™ 2EDi with reinforced isolation
	2300 V	1-ch isolated	1ED3122MC12H	10/9 A	EiceDRIVER™ X3 Compact with Miller clamp
DC-DC (<150 kW)			1ED3124MC12H	13.5/14 A	EiceDRIVER™ X3 Compact with separate output	CoolMOS™ MOSFET IPW60R018CFD7 CoolSiC™ Module FF8MR12W1M1_B11, FF6MR12W2M1P_B11
			1ED3241MC12H	18/18 A	EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control
			1ED3321MC12N	6/8.5 A	EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp
			1ED3890MC12M	7.5/11 A	EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp
Single-end boost PFC	25 V	1-ch non-isolated	1EDN8511B	4/8 A	Separate output, 19 ns propagation delay	CoolMOS™ MOSFET P7 IPW60R037P7, IPW60R024P7 650 V CoolSiC™ IMW65R048M1H, IMW65R027M1H 650 V TRENCHSTOP™ IGBT IKW50N65EH5 1200V CoolSiC™ IMW120R045M1, IMW120R030M1H 1200V IGBT HighSpeed 3 IGW40N120H3, IGW25N120H3 CoolSiC™ Diode IDH20G65C5, IDWD20G120C5
			1ED44171N01B*	2.6/2.6 A	Enable, programmable fault clear time, UVLO
			1ED44175N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
			1ED44176N01F	0.8/1.75 A	Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM
			IRS44273L	1.5/1.5 A	Additional OUT pin
	200 V		1EDN8550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
Interleaved boost PFC	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay
	24 V		2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V		IRS4427S	2.3/3.3 A	Matched propagation delay
Totem pole PFC	650 V	High and Low Side	2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN	600 V CoolMOS™ CFD7 MOSFET IPP60R070CFD7, IPP60R280CFD7, IPT60R035CFD7 EasyPACK™ IGBT Module FS50R12W1T7_B11, FS100R12W2T7
	1200 V	2-ch isolated	2EDB8259F*	4/8 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
	1200 V	2-ch isolated	2EDB8259Y*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
Vienna rectifier	22 V	2-ch non-isolated	2EDN7534F	5/5 A	2 ns delay matching, 19 ns propagation delay	650 V CoolMOS™ C7 MOSFET IPP65R045C7, IPW65R019C7, IPL65R070C7 600 V CoolMOS™ P7 MOSFET IPP60R060P7, IPP60R360P7, IPW60R024P7 CoolSiC™ Module F3L15MR12W2M1_B69, F3L11MR12W2M1_B65
	1200 V	1-ch isolated	1EDB6275F	5/9 A	EiceDRIVER™ 1EDB with basic isolation (3kV UL 1577)
	1200 V	1-ch isolated	1EDI60N12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output

*Coming soon

Lighting

LED applications are often powered by an AC-DC supply. Some of those are loosely regulated, or not regulated at all. Since the LED drivers’ purpose is to control the current flow through the LED, this results in the need for a LED driver to provide constant current or constant voltage to the LEDs.

Regardless of the many functions such as communication required by LED lighting, the development of the power supply block is, where several functions are concentrated, a key point.

LED lighting power supply units and LED driver design are required to offer maximum efficiency, power factor (PFC), total harmonic distortion (THD), and are subject to specific requirements regarding safety (EN 61347-1/-2-13), EMC (EN 55015), harmonic current emissions, and further specific requirements of standards such as UL and IEC.

Applications:

Commercial lighting
Industrial lighting
Agricultural lighting
SMPS (Fly-back)
SMPS (Half-bridge)
SMPS (High-side buck)
SMPS (Sync buck)

Recommended gate drivers for Lighting

PFC	22 V	1-ch non-isolated	1EDN8511B	4/8 A	Separate output, 19 ns propagation delay	600 V CoolMOS™ P7 MOSFET IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 700 V CoolMOS™ P7 MOSFET IPN70R360P7S, IPD70R360P7S, IPA70R360P7S, IPAN70R360P7S 800 V CoolMOS™ P7 MOSFET IPN80R600P7, IPD80R280P7, IPP804280P7, IPA80R280P7 950 V CoolMOS™ P7 MOSFET IPN95R1K2P7, IPD95R450P7, IPA95R450P7, IPU95R450P7
	25 V		1ED44171N01B*	2.6/2.6 A	Enable, programmable fault clear time, UVLO
			1ED44173N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
			1ED44176N01F	0.8/1.75 A	Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM
			IRS44273L	1.5/1.5 A	Additional OUT pin
	200 V	1-ch non-isolated	1EDN7550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay
	24 V		2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V		IRS4427S	2.3/3.3 A	Matched propagation delay
HS buck (<100 W)	100 V	Single high-side	IRS10752L	0.16/0.24 A	UVLO on low-side and high-side	600 V CoolMOS™ P7 MOSFET IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7
	200 V	1-ch non-isolated	1EDN7550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
	200 V	Single high-side	IRS20752L	0.16/0.24 A	UVLO on low-side and high-side
	600 V	Single high-side	IRS25752L	0.16/0.24 A	UVLO on low-side and high-side
Fly-back	22 V	1-ch non-isolated	1EDN7511B	4/8 A	2 ns delay matching, 19 ns propagation delay	800 V CoolMOS™ P7 MOSFET IPN80R600P7, IPA80R280P7 950 V CoolMOS™ P7 MOSFET IPN95R1K2P7, IPD95R450P7
Fly-back	200 V	1-ch non-isolated	1EDN7550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
HB(LLC) (<500 W)	600 V	Half-Bridge	IRS2153DS	0.18/0.26 A	Self-oscillating, Integrated bootstrap FET, Shutdown	600 V CoolMOS™ P7 MOSFET IPW60R180P7, IPD60R180P7, IPA60R360P7S, IPP60R180P7
	650 V	High and Low Side	2ED2101S06F	0.29/0.7 A	Infineon SOI, integrated BSD, fast level-shift, HIN, LIN
	650 V	Half-Bridge	2ED2304S06F	0.36/0.7 A	Infineon SOI, integrated BSD
HB(LLC) (>500 W)	1200 V	1-ch isolated	1EDI60N12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output	600 V CoolMOS™ P7 MOSFET IPW60R099P7, IPD60R180P7, IPA60R099P7, IPP60R099P7
		Half-Bridge	2ED020I12-FI	1.5/2.5 A	EiceDRIVER™ Enhanced 2ED-FI with OPAMP and comparator (isolation only on the high side)
		2-ch isolated	2EDB8259F*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
		2-ch isolated	2EDB8259Y*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
Sync buck	200 V	High and Low Side	IR2010S	3/3 A	Shutdown	600 V CoolMOS™ P7 MOSFET IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 650 V CoolSiC™ SiC MOSFET IMZA65R027M1H, IMZA65R107M1H
	600 V	Half-Bridge	2EDL05N06PF	0.36/0.7 A	Infineon SOI, integrated BSD
	650 V	Half-Bridge	2ED2304S06F	0.36/0.7 A	Infineon SOI, integrated BSD
	1200 V	1-ch isolated	1EDB9275F	5.4/9.8 A	EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577)
		2-ch isolated	2EDB8259F*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
		2-ch isolated	2EDB8259Y*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
Application	Driver Voltage class [V]	Configuration	Driver	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Light electric vehicles (LEV)

Applications:

Low power LEV (< 3 kW)
- E-scooters (standing, self-balancing and folding types)
- E-bikes
- E-rickshaws, other e-three-wheelers
High power LEV (>3 kW)
- E-forklifts
- Light utility vehicles (LUVs)
- Low speed electric vehicles (LSEVs / micro EVs)
- E-scooters and E-motorbikes
- E-golf carts

Recommended gate drivers for Light electric vehicles

Motor Inverter <3kW (<48 V Battery)	60 V	Three-Phase	6EDL7141	1.5/1.5 A	Fully programmable, integrated power supplies and current sense amplifiers, slew rate control, protection features	60 V StrongIRFET™ IRFS7530, IRF60SC241 60 V OptiMOS™ 5 MOSFET IPTG007N06NM5, IPB010N06N, IST011N06NM5, BSC012N06NS 75 V StrongIRFET™ IRFB7730, BSC036NE7NS3G
	160 V	High and Low Side	2ED2732S01G*	1/2 A	SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad
	160 V	Three-Phase	6ED2742S01Q*	1/2 A	SOI, integrated BSD, PMU, 100% DC w. trickle charge pump, programmable OCP w. select gain, CS amp, RFE
	200 V	Three-Phase	6EDL04N02PR	0.165/0.375 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		High and Low Side	IRS2005S	0.29/0.6 A	UVLO, MTON/OFF,max=50ns, 3.3V-15V input
		High and Low Side	IRS2011S	1/1 A	UVLO, MTON/OFF,max=20ns, 3.3V-5V input
	600 V	High and Low Side	2EDL05N06PF	0.36/0.7 A	SOI, UVLO, MTON/OFF,max=60ns, 3.3-15V input, BSD
		Three-Phase	6EDL04N06PT	0.165/0.375 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		Single high-side	IRS21271S	0.2/0.42 A	UVLO, OCP, 3-15V input, fault reporting
Motor Inverter 3-10kW (48-96 V Battery)	160 V	High and Low Side	2ED2738S01G*	4/8 A	SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad	80 V OptiMOS™ 5 MOSFET IPT010N08NM5, IPTG011N08NM5, IPTC014N08NM5, IPB015N08N5, BSC019N08NS5, IST019N08NM5 100 V IR MOSFET™ IRLS4030, IRF100B201 100 V StrongIRFET™ 2 IPP026N10NF2S, IPA030N10NF2S 100 V OptiMOS™ 5 MOSFET IPTG014N10NM5, IPTG018N10NM5, IPTC015N10NM5, IPB017N10N5, IST026N10NM5, BSC027N10NS5 100 V OptiMOS™ 6 MOSFET ISC022N10NM6
	200 V	1-ch non-isolated	1EDN8550B	4/8 A	True differential inputs, with ± 80 V static & ± 150V dynamic ground-shift robustness, separate SRC/SNK output pins
	500 V	High and Low Side	IRS2110S	2/2 A	MTON/OFF,max=10ns, Separate power and logic ground, SD pin, 3-20V input
	600 V	High and Low Side	2EDL23N06PJ	2.3/2.8 A	3.3V-15V input, -100V transient , PGND, SOI, integrated BSD, OCP, UVLO, Enable, fault reporting
	600 V	High and Low Side	IRS21867S	4/4 A	3-5V input, MTON/OFF,max=35ns, UVLO, neg. transient robust
	650 V	High and Low Side	2ED2181S06F	2.5/2.5 A	SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient
	650 V	High and Low Side	2ED2181S06J	2.5/2.5 A	SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient, separate logic and power ground
Motor Inverter >10 kW (>96 V Battery)	1200 V	1-ch isolated	1EDB8275F	5/9 A	3kV basic isolation w. CT technology, (UL1577), separate SRC/SNK output, UVLO (4 types), CMTI > 300 V/ns	150 V IR MOSFET™ MOSFET IRFB4115 150 V OptiMOS™ 5 MOSFET IPB044N15N5, IPT039N15N5 200 V StrongIRFET™ IRF200S234 200 V OptiMOS™ 3 MOSFET IPB107N20N3G, IPTG111N20NM3FD
		1-ch isolated	1EDI60N12AF	10/9.4 A	Short Circuit Clamping, Active Shut-Down, UVLO, separate SRC/SNK output , 3.3-15V input
		2-ch isolated	2EDB8259F*	5/9 A	3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns
		2-ch isolated	2EDB8259Y*	5/9 A	3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns
	2300 V	1-ch isolated	1ED3121MC12H	5.5/5.5 A	EiceDRIVER™ X3 Compact with separate output
Application	Driver Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Major home appliances

Applications

Refrigerators (compressors)
Air-conditioners (PFC, compressors, fans, SMPS)
Washing machines (drum motors, drain pumps)
Dryers (drum drives, compressors, fan drives)
Dish washers (drain pumps, spray/main circulator pumps)

Circuit diagram of the major home appliances

Single-end boost PFC	22 V	1-ch non-isolated	1EDN8511B	4/8 A	Separate output, 19 ns propagation delay	TRENCHSTOP™ IKWH30N65WR6, IKW40N65ET7 Rapid Diode IDW60C65D1, IDW40E65D1E CoolMOS™ MOSFET IPP60R120P7, IPW60R099P7 CoolSiC™ Diode IDW30G65C5, IDH20G65C6 CIPOS™ Mini IFCM15S60GD, IFCM10P60GD
	25 V		1ED44171N01B*	2.6/2.6 A	Enable, programmable fault clear time, UVLO
			1ED44173N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
			1ED44176N01F	0.8/1.75 A	Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM
			IRS44273L	1.5/1.5 A	Additional OUT pin
Interleaved boost PFC	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay
	24 V	2-ch non-isolated	2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V	2-ch non-isolated	IRS4427S	2.3/3.3 A	Matched propagation delay
Totem pole PFC	600 V	Half-Bridge	2EDL23N06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting	600 V CoolMOS™ CFD7 MOSFET IPP60R070CFD7, IPP60R280CFD7, IPT60R035CFD7, IPT60R145CFD7
	650 V	High and Low Side	2ED2101S06F	0.29/0.7 A	Infineon SOI, integrated BSD, fast level-shift, HIN, LIN
		High and Low Side	2ED2110S06M	2.5/2.5 A	Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM
		High and Low Side	2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
Motor Inverter/ Compressor/ Drives/ Fans	600 V	Half-Bridge	2EDL05I06PF	0.36/0.7 A	Infineon SOI, integrated BSD	TRENCHSTOP™ IGBT+Diode IKD04N60RC2, IKD06N60RC2 TRENCHSTOP™ IGBT6 IKA08N65ET6, IKA15N65ET6 CoolMOS™ MOSFET PFD7 IPD60R1K0PFD7S, IPN60R600PFD7S
		Half-Bridge	2EDL23I06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		Three-Phase	6EDL04I06PT	0.165/0.375 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		Three-Phase	IRS2334M	0.2/0.35 A	Space saving QFN package, matched propagatin delay
		Half-Bridge	IRS2890DS	0.22/0.48 A	Integrated bootstrap FET, OCP, fault reporting
	650 V	High and Low Side	2ED2106S06F	0.29/0.7 A	Infineon SOI, integrated BSD, HIN, LIN
		Half-Bridge	2ED2108S06F	0.29/0.7 A	Infineon SOI, integrated BSD, HIN, LIN
		High and Low Side	2ED21814S06J	2.5/2.5 A	Infineon SOI, integrated BSD, separate VSS/COM
		Half-Bridge	2ED2182S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
		Half-Bridge	2ED2304S06F	0.36/0.7 A	Infineon SOI, integrated BSD
Non-Motor Inverter	25 V	1-ch non-isolated	1ED44173N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing	TRENCHSTOP™ IGBT Reverse Conducting IHW20N135R5, IHW60N65R
	650 V	Half-Bridge	2ED21824S06J	2.5/2.5 A	Infineon SOI, integrated BSD, separate VSS/COM
	1200 V	1-ch isolated	1EDI20I12AF	4/3.5 A	EiceDRIVER™ 1ED Compact with separate output
	25 V	2-ch non-isolated	IRS4427S	2.3/3.3 A	Matched propagation delay	CoolMOS™ MOSFET P7 IPN80R4K5P7
	600 V	High and Low Side	IRS2106S	0.29/0.6 A	Independent UVLOs
	600 V	Half-Bridge	IRS2153DS	0.18/0.26 A	Self-oscillating, Integrated bootstrap FET, Shutdown
	650 V	High and Low Side	2ED2101S06F	0.29/0.7 A	Infineon SOI, integrated BSD, fast level-shift, HIN, LIN
	650 V	Half-Bridge	2ED2304S06F	0.36/0.7 A	Infineon SOI, integrated BSD
Application	Driver Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Renewable energy

Renewable energy applications

Solar (string & central inverters)
Solar (micro inverters)
Heat pumps (pump inverters)

Recommended gate drivers for Solar

3-phase string inverter	1200 V	2-ch isolated	2ED020I12-F2	2/2 A	EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp	CoolSiC™ SiC MOSFET IMW120R030M1, IMW120R090M1H CoolSiC™ SiC Diode IDW20G1205B, IDW40G120C5B TRENCHSTOP™ IGBT IKW40N120H3, IKW40N65ES5, IKW40N65H5 CoolSiC™ SiC Hybrid booster module DF80R12W2H3F_B11, DF160R12W2H3F_B11 CoolSiC™ SiC MOSFET booster module DF11MR12W1M1_B11, DF23MR12W1M1_B11 CoolSiC™ SiC MOSFET 2-Level module FF8MR12W2M1_B11, FS45MR12W1M1_B11 EasyPACK™ IGBT module FS3L30R07W2H3F_B11, F3L200R12W2H3_B11
			2EDF6258X*	4/8 A	EiceDRIVER™ 2EDi with functional isolation
			2EDF9275F	4/8 A	EiceDRIVER™ 2EDi with Functional isolation, Disable
			2EDR8259H*	4/8 A	EiceDRIVER™ 2EDi with reinforced isolation
	2300 V	1-ch isolated	1ED3124MC12H	13.5/14 A	EiceDRIVER™ X3 Compact with separate output
		1-ch isolated	1ED3241MC12H	18/18 A	EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control
		1-ch isolated	1ED3321MC12N	6/8.5 A	EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp
		1-ch isolated	1ED3491MC12M	7.5/11 A	EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp
1-phase string inverter	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay	OptiMOS™ MOSFET BSC093N15NS5, IPB044N15N5, IPP051N15N5 CoolMOS™ MOSFET IPZA65R029CFD7, IPZA60R024P7 CoolSiC™ SiC MOSFET IMZA65R027M1H, IMBG65R022M1H CoolSiC™ SiC Diode IDW40G65C5, IDW20G65C5 TRENCHSTOP™ IGBT IKW40N65ES5, IKZ50N65EH5, IKZ75N65EL5
	24 V	2-ch non-isolated	2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V	1-ch non-isolated	1ED44175N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
		2-ch non-isolated	IRS4427S	2.3/3.3 A	Matched propagation delay
		1-ch non-isolated	IRS44273L	1.5/1.5 A	Additional OUT pin
	650 V	High and Low Side	2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
	650 V	Half-Bridge	2ED21824S06J	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM
	1200 V	1-ch isolated	1EDB9275F	5.4/9.8 A	EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577)
		1-ch isolated	1EDI60N12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output
		2-ch isolated	2EDB9259Y*	4/8 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
		2-ch isolated	2EDB7259Y*	5/9 A	3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns
		High and Low Side	IR2213S	2/2.5 A	Shutdown and Separate power supply
		Half-Bridge	IR2214SS	2/3 A	DESAT, soft-off, two stage turn on, fault reporting, Synchronization
	2300 V	1-ch isolated	1ED3124MC12H	13.5/14 A	EiceDRIVER™ X3 Compact with separate output
Micro Inverter	160 V	High and Low Side	2ED2732S01G*	1/2 A	Infineon SOI, integrated BSD, separate VSS/COM, thermal pad	OptiMOS™ MOSFET BSC093N15NS5, BSC028N06NS, BSC027N10NS5 CoolMOS™ MOSFET IPT60R102G7, IPB65R125CFD7, IPW60R145CFD7
	160 V	Half-Bridge	2ED2748S01G*	4/8 A	Infineon SOI, integrated BSD, separate VSS/COM, thermal pad
	200 V	High and Low Side	IRS2011S	1/1 A	60 ns prop delay, VCC & VBS UVLO
	600 V	Half-Bridge	2EDL05N06PJ	0.36/0.7 A	Infineon SOI, integrated BSD
	650 V	Half-Bridge	2ED21824S06J	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM
	650 V	Half-Bridge	2ED2304S06F	0.36/0.7 A	Infineon SOI, integrated BSD
	1200 V	2-ch isolated	2EDS7165H	1/2 A	EiceDRIVER™ 2EDi with reinforced isolation
Power Optimizer	200 V	1-ch non-isolated	1EDN8550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness	OptiMOS™ MOSFET BSC093N15NS5, BSC012N06NS, BSC027N10NS5
	200 V	High and Low Side	IRS2011S	1/1 A	60 ns prop delay, VCC & VBS UVLO
	250 V	High and Low Side	2EDF5215F*	5/9 A	7 V UVLO, functional isolation and 37 ns propagation delay
Application	Driver Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Small home appliances

Applications

Vacuum cleaner (SR motor, BLDC, PFC)
Hair dryers
Induction heating (half bridge-topology)
Microwave ovens
Fans (hood fans, ceiling fans, freezer fans)

Battery-powered applications

Sub applications

Drones / multicopters (<1 kW)
Lawn mower (<1 kW)
Cordless power tools (<1 kW)
Service robotics (<1 kW)
Cordless vacuum cleaners (<1 kW)
Toys (RC cars) (<1 kW)
Fast battery chargers

Motor Inverter/BLDC	60 V	Three-Phase	6EDL7141	1.5/1.5 A	Fully programmable, integrated power supplies and current sense amplifiers	StrongIRFET™ MOSFET IRF7480M, IRF6726M StrongIRFET™ 2 MOSFET IPP016N08NF2S, IPP026N10NF2S 30 V OptiMOS™ 5 MOSFET BSZ0500NSI, BSC009NE2LS5 40 V OptiMOS™ 5 MOSFET BSC019N04LS, BSZ028N04LS 60 V OptiMOS™ 5 MOSFET BSC012N06NS, IPT007N06N 80 V OptiMOS™ 5 MOSFET BSC021N08NS5, IPT010N08NM5 100 V OptiMOS™ 5 MOSFET BSC027N10NS5, IPT015N10N5 150 V OptiMOS™ 5 MOSFET BSC074N15NS5
	160 V	High and Low Side	2ED2732S01G*	1/2 A	Infineon SOI, integrated BSD, separate VSS/COM, thermal pad
		Three-Phase	6ED2742S01Q*	1/2 A	Infineon SOI, integrated BSD, PMU, trickle charge pumps, programmable OCP, and current sense amp, RFE
		Half-Bridge	2ED2748S01G*	4/8 A	Infineon SOI, integrated BSD, separate VSS/COM, thermal pad
	200 V	1-ch non-isolated	1EDN7550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
		Three-Phase	6ED003L02-F2	0.165/0.375 A	Infineon SOI, OCP, Enable, fault reporting
		Three-Phase	6EDL04N02PR	0.165/0.375 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		High and Low Side	IRS2005S	0.29/0.6 A	VCC & VBS UVLO, matched propagation delay
		Half-Bridge	IRS2007S	0.29/0.6 A	VCC & VBS UVLO, matched propagation delay
		High and Low Side	IRS2011S	1/1 A	60 ns prop delay, VCC & VBS UVLO
	600 V	Half-Bridge	2EDL05N06PF	0.36/0.7 A	Infineon SOI, integrated BSD
		Half-Bridge	2EDL23N06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		Three-Phase	6EDL04N06PT	0.165/0.375 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
		High and Low Side	IRS21867S	4/4 A	High current for high power and fast switching frequency with low UVLO (6 V/5.5 V)
Battery Charger	22 V	1-ch non-isolated	1EDN8511B	4/8 A	Separate output, 19 ns propagation delay	CoolMOS™ MOSFET IPW60R070CFD7, IPAN60R125PFD7S CoolMOS™ MOSFET P7 IPA80R900P7, IPA60R180P7S 650 V CoolSiC™ MOSFET IMW65R048M1H, IMZA65R072M1H CoolSiC™ Diode IDH10G65C6, IDW20G65C5B OptiMOS™ 5 IPA083N10N5, IPA029N06N
	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay
	25 V	1-ch non-isolated	1ED44171N01B*	2.6/2.6 A	Enable, programmable fault clear time, UVLO
			1ED44175N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
			IRS44273L	1.5/1.5 A	Additional OUT pin
	600 V	High and Low Side	IRS2186S	4/4 A	High current for high power and fast switching frequency
	650 V		2ED2106S06F	0.29/0.7 A	Infineon SOI, integrated BSD, HIN, LIN
			2ED2110S06M	2.5/2.5 A	Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM
			2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM
Application	Driver Voltage class [V]	Configuration	Driver	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Telecom, Server and Industrial SMPS

In addition to Infineon Technologies EiceDRIVER™ gate driver ICs, Infineon Technology provides ac-dc controllers, dc-dc converters, MOSFETs, Intelligent Power Modules, lighting ICs, transistors (IGBTs), diodes and rectifier, regulators, isolation interfaces, voltage, and current management for internal and external power supply applications. Our design solutions increase active-mode efficiency, decrease standby-mode power consumption, and provide power factor correction, at every stage of your layout from line to load.

With the introduction of gallium nitride, Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN. We deliver solutions from microamps to megawatts as discrete or integrated solutions—depending on your preference.

Diagram for the Telecom, Server and Industrial SMPS application

Single-end boost PFC	22 V	1-ch non-isolated	1EDN7511B	4/8 A	Separate output, 19 ns propagation delay	600 V CoolMOS™ C7 MOSFET IPL60R065C7, IPZ60R017C7, IPZ60R099C7 600 V CoolMOS™ G7 MOSFET IPT60R028G7, IPDD60R050G7, IPDD60R190G7 600 V CoolMOS™ P7 MOSFET IPZA60R024P7, IPZA60R180P7, IPL60R365P7
	25 V		1ED44175N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
	25 V		IRS44273L	1.5/1.5 A	Additional OUT pin
	200 V		1EDN8550B	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
Totem pole PFC	600 V	Half-Bridge	2EDL23N06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting	600 V CoolMOS™ CFD7 MOSFET IPP60R070CFD7, IPT60R035CFD7, IPT60R145CFD7
	650 V	High and Low Side	2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
	1200 V	1-ch isolated	1EDF5673F	4/8 A	EiceDRIVER™ 1EDi with functional isolation for GaN HEMTs
	1200 V	2-ch isolated	2EDB8259F*	4/8 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)	600 V CoolGaN™ HEMT IGT60R070D1, IGOT60R070D1, IGLD60R190D1
Vienna rectifier	22 V	2-ch non-isolated	2EDN7534F	5/5 A	2 ns delay matching, 19 ns propagation delay	600 V CoolMOS™ C7 MOSFET IPP60R040C7, IPW60R017C7, IPB60R040C7 650 V CoolMOS™ C7 MOSFET IPP65R045C7, IPW65R019C7, IPB65R045C7 600 V CoolMOS™ P7 MOSFET IPP60R060P7, IPW60R024P7, IPW60R180P7
	1200 V	2-ch isolated	2EDB8259Y*	4/8 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
	1200 V	2-ch isolated	2EDR8259H*	4/8 A	EiceDRIVER™ 2EDi with reinforced isolation
LLC/ZVS PSFB	600 V	High and Low Side	IRS2186S	4/4 A	High current for high power and fast switching frequency	600 V CoolMOS™ CFD7 MOSFET IPP60R070CFD7, IPP60R280CFD7, IPT60R035CFD7, IPT60R145CFD7 650 V CoolSiC™ SiC MOSFET IMZA65R027M1H, IMZA65R072M1H 600 V CoolGaN™ HEMT IGT60R070D1, IGO60R070D1, IGLD60R190D1
	1200 V	1-ch isolated	1EDS5663H	4/8 A	EiceDRIVER™ 1EDi with Reinforced isolation for GaN HEMTs, Disable
	1200 V	2-ch isolated	2EDR8259X*	5/9 A	EiceDRIVER™ 2EDi with reinforced isolation
Sync rectifier	22 V	1-ch non-isolated	1EDN7512G	4/8 A	Separate output, 19 ns propagation delay	40 V OptiMOS™ 6 MOSFET BSC059N04LS6, ISC012N04LM6, IST007N04NM6 60 V OptiMOS™ 5 MOSFET BSC016N06NS, ISC009N06LM5, BSZ040N06LS5 80 V OptiMOS™ 5 MOSFET BSC019N08NS5, BSZ070N08LS5, IPT010N08NM5 100 V OptiMOS™ 5 MOSFET BSC040N10NS5, IPT015N10N5, IPTG014N10NM5 150 V OptiMOS™ 5 MOSFET BSC074N15NS5, BSC160N15NS5, IPB060N15N5
	22 V	2-ch non-isolated	2EDN7534G	5/5 A	2 ns delay matching, 19 ns propagation delay
	24 V	2-ch non-isolated	2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V	1-ch non-isolated	1ED44173N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
	120 V	High and Low Side	2EDL8024G	4/6 A	<6ns delay matching, VDD/VHB UVLO
	120 V	Half-Bridge	2EDL8124G3C*	4/6 A	<6ns delay matching, VDD/VHB UVLO
	200	1-ch non-isolated	1EDN7116G*	2/2 A	GaN driver with truly differential input & adjustable negative charge pump
			1EDN7116U*	2/2 A	GaN driver with truly differential input
			1EDN7550U	4/8 A	True differential inputs, with ± 80 V static ground-shift robustness
		2-ch non-isolated	IR11688S	1/4 A	Dual synchronous rectification control IC
	1200 V	2-ch isolated	2EDB8259F*	5/9 A	EiceDRIVER™ 2EDi with basic isolation (3kV UL1577)
Application	Driver Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules

*Coming soon

Uninterruptible power supply (UPS)

With increasing awareness and commitment towards reducing carbon emissions across the world, relatively brings more stringent compliance subsequently increasing the threat of higher energy costs are driving the market for higher-efficiency UPSs. There is also a market trend toward customers requiring smaller UPS units that provide the same level of protection. The trend is being driven by space being at a premium and by the cost of ownership. The smaller the UPS unit’s footprint, the lighter in weight it becomes, the less it costs to operate and the more space is available to devote to the core business or process. Combining the strengths of the Easy power modules, Infineon’s 1200 V CoolSiC™ MOSFET, and EiceDRIVER™ gate driver ICs enables our customers to not only reduce system and operational cost significantly further helps to harness never before seen levels of efficiency and power density.

Battery DC-DC (<25 kW)	600 V	Half-Bridge	2EDL05I06PJ	0.36/0.7 A	Infineon SOI, integrated BSD	TRENCHSTOP™ IKW50N65H5, IKFW75N60ET
	600 V	Half-Bridge	2EDL23I06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting
	650 V	High and Low Side	2ED2110S06M	2.5/2.5 A	Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM
	650 V	High and Low Side	2ED2181S06F	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, LIN
	1200 V	1-ch isolated	1EDI20I12AF	4/3.5 A	EiceDRIVER™ 1ED Compact with separate output	TRENCHSTOP™ IGBT+Diode IKW15N120BH6, IKQ75N120CS6
		High and Low Side	IR2213S	2/2.5 A	Shutdown and Separate power supply	TRENCHSTOP™ IGBT+Diode IKW15N120BH6, IKQ75N120CS6
Battery DC-DC (<100 kW)		1-ch isolated	1EDI60I12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output	EconoPACK™ 2/3/4 module FS50R12KT4_B11, FS150R12KT4_B11
Mains inverter (<25 kVA)	600 V	Half-Bridge	2EDL23I06PJ	2.3/2.8 A	Infineon SOI, integrated BSD, OCP, Enable, fault reporting	TRENCHSTOP™ IGBT IKW30N65ES5, IKW75N65EH5
		Half-Bridge	IR2114SS	2/3 A	DESAT, soft-off, two stage turn on, fault reporting, Synchronization
		High and Low Side	IRS2186S	4/4 A	High current for high power and fast switching frequency
	650 V	Half-Bridge	2ED21834S06J	2.5/2.5 A	Infineon SOI, integrated BSD,HIN, /LIN, separate VSS/COM
	1200 V	1-ch isolated	1EDI20I12MF	4.4/4.1 A	EiceDRIVER™ 1ED Compact with Miller clamp	TRENCHSTOP™ IGBT IKW15N120BH6, IKQ75N120CS6
		1-ch isolated	1EDI60I12AF	10/9.4 A	EiceDRIVER™ 1ED Compact with separate output	TRENCHSTOP™ IGBT IKW15N120BH6, IKQ75N120CS6
		2-ch isolated	2ED020I12-F2	2/2 A	EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp	EasyPACK™ 3-level NPC 1 module FS3L30R07W2H3F_B11, FS3L50R07W2H3F_B11 EasyPACK™ 3-level NPC 2 module F3L75R12W1H3_B11, F3L150R12W2H3_B11 CoolSiC™ MOSFET 3-level NPC 2 module F3L15MR12W2M1_B69 EconoPACK™ 2-level full-bridge module FS50R12KT4_B11, FS150R12PT4
	2300 V	1-ch isolated	1ED3124MC12H	13.5/14 A	EiceDRIVER™ X3 Compact with separate output
			1ED3241MC12H	18/18 A	EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control
			1ED3321MC12N	6/8.5 A	EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp
			1ED3491MC12M	7.5/11 A	EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp
			1ED3890MC12M	7.5/11 A	EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp
PFC/SMPS	22 V	1-ch non-isolated	1EDN8511B	4/8 A	Separate output, 19 ns propagation delay	TRENCHSTOP™ IGBT IKW30N65H5, IKW50N65F5 CoolMOS™ MOSFET P7 IPW60R037P7, IPW60R024P7
	22 V	2-ch non-isolated	2EDN8534F	5/5 A	2 ns delay matching, 19 ns propagation delay
	24 V	2-ch non-isolated	2ED24427N01F	10/10 A	Enable, Low RDSON outputs, thermal pad
	25 V	1-ch non-isolated	1ED44171N01B*	2.6/2.6 A	Enable, programmable fault clear time, UVLO
			1ED44175N01B	2.6/2.6 A	Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing
			1ED44176N01F	0.8/1.75 A	Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM
		2-ch non-isolated	IRS4427S	2.3/3.3 A	Matched propagation delay
		1-ch non-isolated	IRS44273L	1.5/1.5 A	Additional OUT pin
Active Bridge Rectifier (<100 kVA)	1200 V	2-ch isolated	2ED020I12-F2	2/2 A	EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp	CoolSiC™ SiC MOSFET IMW120R030M1, IMW120R090M1H CoolSiC™ MOSFET 3-level NPC 2 module F3L15MR12W2M1_B69 EasyPACK™ 3-level NPC 2 module F3L75R12W1H3_B11, F3L150R12W2H3_B11
	2300 V	1-ch isolated	1ED3124MC12H	13.5/14 A	EiceDRIVER™ X3 Compact with separate output
	2300 V	1-ch isolated	1ED3321MC12N	6/8.5 A	EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp
Application	Driver Voltage class [V]	Configuration	Part number	Output current [A]	Features	Suitable power switches and modules

*Coming soon

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Forklifts: Intralogistics solutions with Infineon’s components

Learn about the main reasons for the forklift market growth and the main forklift applications and requirements
Discover why Infineon is your one-stop-shop semiconductor supplier

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Gate drive design cookbook for driving MOSFETs

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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