Active and preferred
RoHS準拠
鉛フリー

2EDB7259K

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing.

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2EDB7259K
2EDB7259K

Product details

  • VBS UVLO (Off)
    3.9 V
  • VBS UVLO (On)
    4.2 V
  • アイソレーション タイプ
    Galvanic isolation - Basic
  • コンフィギュレーション
    High-side and low-side, Half Bridge
  • チャネル
    2
  • 伝搬遅延オフ
    36 ns
  • 伝搬遅延オン
    38 ns
  • 入力 Vcc
    3 V to 17 V
  • 出力電流 (Source)
    5 A
  • 出力電流 (Sink)
    9 A
  • 認定
    Industrial
  • 電圧クラス
    250 V
OPN
2EDB7259KXUMA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 N/A
包装サイズ 4000
包装形態 TAPE & REEL
水分レベル 3
モイスチャーパッキン DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 -
包装サイズ 4000
包装形態 TAPE & REEL
水分レベル 3
モイスチャーパッキン DRY
鉛フリー
ハロゲンフリー
RoHS対応
The EiceDRIVER™ 2EDB7259K is a dual channel isolated gate driver IC with floating outputs. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with OptiMOS™ in high-power switching noise environment. The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control. Safety certificates in accordance with UL1577 and GB4943.1 are available. 2EDB7259K is available in a 13-pin LGA 5x5 mm package.

機能

  • up to 8000 Vpk VIOTM robust input-to-output isolation meeting the latest components standards (IEC60747-17)
  • Available system standards certificates (EN 62368-1, GB4943.1)  
  • Channel-to-channel isolation
  • Accurate timings
  • High CMTI (common mode rejection) > 150 V/ns
  • < 2 µs fast UVLO start-up time
  • Fast active clamping of the output for supply below UVLO
  • Optional Dead-time control and shoot-through protection (DTC/STP)
  • 16-pin package with increased channel-to-channel creepage

利点

  • System safe isolation
  • Simplified system safety approval
  • Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments
  • Perfect signal synchronization for increased system efficiency
  • Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices
  • Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC)
  • Enabling safe operation in bootstrapped system during start-up
  • Protection against input overlap in case of noisy conditions as output short circuits
  • Operation at higher bus voltages or in worst pollution degree environments

ドキュメント

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