IPSA70R450P7S

Infineon's answer for flyback topologies
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IPSA70R450P7S
IPSA70R450P7S
データシート

Product details

  • Ciss
    424 pF
  • Coss
    8 pF
  • ID (@25°C) max
    10 A
  • ID max
    10 A
  • IDpuls max
    25.9 A
  • Ptot max
    50 W
  • Qgd
    5 nC
  • QG
    13.1 nC
  • QG (typ @10V)
    13.1 nC
  • RDS (on) max
    450 mΩ
  • RDS (on) (@10V) max
    450 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    2.5 K/W
  • Rth
    2.5 K/W
  • VDS max
    700 V
  • VGS(th)
    3 V
  • Package
    IPAK
  • Pin Count
    3 Pins
  • Budgetary Price €/1k
    0.3
  • Operating Temperature
    -40 °C to 150 °C
  • Mounting
    THT
  • Polarity
    N
  • Special Features
    price/performance
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

機能

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
  • Low switching losses (E oss)
  • Highly efficient
  • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

利点

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

用途

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "コミュニティに質問する", "labelEn" : "コミュニティに質問する" }, { "link" : "https://community.infineon.com/", "label" : "すべてのディスカッションを表示", "labelEn" : "すべてのディスカッションを表示" } ] }