IRFP4710

100V Single N-Channel Power MOSFET in a TO-247 package
データシート

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IRFP4710
IRFP4710
データシート

製品仕様情報

  • ID (@25°C) max
    72 A
  • Ptot max
    190 W
  • Qgd
    40 nC
  • QG (typ @10V)
    110 nC
  • RDS (on) (@10V) max
    14 mΩ
  • RthJC max
    0.81 K/W
  • Tj max
    175 °C
  • VDS max
    100 V
  • VGS(th)
    4.5 V
  • VGS max
    20 V
  • パッケージ
    TO-247
  • 実装
    THT
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

機能

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High current rating

利点

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement
  • High current carrying capability

用途

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