EiceDRIVER™ガルバニック絶縁Enhancedシリーズ
These galvanically isolated drivers provide driving capabilities of up to 9 A making booster solutions obsolete. The EiceDRIVER™ Enhanced isolated gate drivers are ideal for applications using traditional switches, such as IGBTs or MOSFETs, but also for leading-edge technologies such as Silicon Carbide (SiC) MOSFET or IGBT7.
In particular the Miller Clamp option and the accurate short-circuit protection feature (DESAT) enables superior application safety by avoiding parasitic turn-on and short-circuit occurrence, respectively, especially when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7.
The EiceDRIVER™ Enhanced galvanically isolated drivers are based on our coreless transformer (CT) technology, enabling a world class common mode transient immunity (CMTI) of 300 kV/μs. They are ideal for applications such as solar string inverters, energy storage systems, EV charging, UPS, industrial drives, CAC, Industrial robotics, induction heating appliances, and power supplies for servers and telecommunication systems.
EiceDRIVER™ Enhanced isolated driver family is a perfect fit for all applications requiring a reliable short-circuit protection (DESAT), benefit from an active Miller clamp and small PCB space requirements.
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- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
