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CoolSiC™ schottky diodes 600V 650V 1200V G5 Reliability Considerations

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. In this document, we show details of Infineon’s strategy to ensure high device reliability even under extreme operating conditions encountered in the field. E.g., an especially tailored dynamic reverse bias test shows that Infineon’s new 1200 V SiC Schottky diodes can be continuously operated at high voltage slopes of 120 V/ns under the conditions specified in this paper.

• 600.92 KB
• 2013/03/01