EiceDRIVER™ 1200 V Level Shift Gate Driver ICs

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Gate driver ICs tailored for industrial drives, commercial air-conditioning and general purpose motor control and inverters.

We offer three phase, half-bridge,  high and low-side gate driver ICs tailored for 1200 V industrial drives, commercial air-conditioning, or general purpose motor control and inverters applications.

We offer an industry leading portfolio of level shift gate driver ICs for 1200 V applications requiring functional isolation. These drivers are available in various three-phase, half-bridge, or high and low side configurations with protection features such as over-current protection (OCP), de-saturation (DESAT), and under-voltage lockout (UVLO).  Status indication (Fault), Enable, and Shutdown control signals are also available. The 1200 V driver ICs are offered in industry standard packages and pin-out configurations . Available in level-shift functional Junction Isolation technology.

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Features Benefits Applications
  • Three-phase solution with Infineon Silicon-On-Insulator (SOI)  technology with integrated Bootstrap Diodes (BSD)
  • Deadtime & cross-conduction prevention logic
  • Fully operational to +1200 V off set voltage
  • Tolerate to negative transient voltage, dV/dt immune
  • Low quiescent current
  • Various input options
  • Standard pin-out and packages
  • High power efficiency
  • Fast & reliable switching
  • Protection under abnormal operation
  • Increased device reliability
  • low-cost bootstrap power supply
  • BOM savings
  • Easy-to-use, straightforward design
  • Fast time-to-market

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Trainings

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Our 1200 V level-shift gate driver family is a high-voltage, level-shift technology that provides unique, measurable, and best-in-class advantages, including an integrated bootstrap-diode and industry best-in-class robustness to protect against negative transient voltage spikes.

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This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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