3300 V Silicon Carbide MOSFETs

3300 V CoolSiC™ MOSFETs with on-resistance ratings down to 1.9 mΩ

Overview

XHP™ 2 CoolSiC™ MOSFET 3.3 kV with .XT interconnection technology were especially developed for applications that require high power and high reliability, such as energy storage systems, hydrogen electrolysis, photovoltaic, traction and more.

Key Features

  • CoolSiC™ MOSFET 3.3 kV
  • XHP™ 2 housing
  • .XT interconnection technology
  • Integrated body diode
  • RDS(on): 1.9, 2.5, 3.8 mOhm
  • Inom: 1000, 750, 500 A

XHP™ 2 CoolSiC™ MOSFET 3.3 kV with .XT interconnection technology

3.3 kV fast - switching, energy - efficient Silicon Carbide CoolSiC™ MOSFETs in low-inductive XHP™ 2 housing with half-bridge topology and robust .XT interconnection technology for enhanced lifetime are available in different variants, with Rdson from 1.9 to 3.8 mΩ and Inom from 1000 A to 500 A.

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well.

Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings

XHP™ 2 CoolSiC™ MOSFET 3.3 kV with .XT interconnection technology

3.3 kV fast - switching, energy - efficient Silicon Carbide CoolSiC™ MOSFETs in low-inductive XHP™ 2 housing with half-bridge topology and robust .XT interconnection technology for enhanced lifetime are available in different variants, with Rdson from 1.9 to 3.8 mΩ and Inom from 1000 A to 500 A.

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well.

Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings

Documents

Documents

Design Resources Component

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