650 V/1200 V Emitter Controlled 7

Discrete Emitter Controlled 7 silicon diodes

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Overview

Single packed standalone Emitter Controlled 7 (EC7) diode in discrete TO247-2 lead package. This diode technology was developed to improve softness and humidity ruggedness compared to previous discrete diode generations as offering in a two voltage classes — 650 V and 1200 V with current rating from 20 A to 150 A.

Key Features

  • Higher current rating up to 150 A
  • Low forward voltage (VF)
  • Low reverse recovery charge
  • Ultra-fast recovery times
  • Soft recovery characteristics

Products

About

About the 650 V Emitter Controlled 7 diode

The 650 V Emitter Controlled 7 (EC7) diode technology has been developed to offer improved softness and humidity ruggedness compared to previous generations of discrete diodes such as EC3, Rapid, and Rapid 2. The soft 650 V EC7 silicon diode provides enhanced reliability for both industrial and home appliance applications. By utilizing the TO247-2 package, discharge-related failure modes are reduced and the unique high current ratings (up to 150 A) increase power density in the discrete package, allowing for smaller size and weight designs. The 650 V EC7 diode can be used in a variety of applications with a main focus on string and micro inverters, data center UPS, offline UPS/residential UPS, online UPS/industrial UPS, residential air conditioning, and welding.

About the 1200 V Emitter Controlled 7 diode

The 1200 V family exhibits excellent softness with a low forward voltage (VF), low reverse recovery charge, and a maximum junction temperature Tj(max) of 175°C. These diodes are qualified for industrial applications according to the relevant tests of JEDEC 47/20/22. One special feature of the 1200 V family is its HV-H3TRB robustness, which enables higher system reliability in hard operating conditions. The TO247-2 2-pin package has a larger creepage distance between the pins than a conventional TO247 3-pin package. For 1200 V applications, this new package reduces the need for extra protection against shorts across the anode-cathode pins, such as adding extra insulation material. Altogether, this makes the 1200 V EC7 Rapid silicon competitive in terms of both price/performance offering.

More information about the discrete Emitter Controlled 7 SiC diodes

The soft and ultra-fast recovery 1200 V EC7 Si diode offers improved reliability for industrial and home appliance applications and also for solar MPPT boost or EV charging Vienna rectifier topologies. Additionally, using the TO247-2 package reduces the discharge related failure modes.

About the 650 V Emitter Controlled 7 diode

The 650 V Emitter Controlled 7 (EC7) diode technology has been developed to offer improved softness and humidity ruggedness compared to previous generations of discrete diodes such as EC3, Rapid, and Rapid 2. The soft 650 V EC7 silicon diode provides enhanced reliability for both industrial and home appliance applications. By utilizing the TO247-2 package, discharge-related failure modes are reduced and the unique high current ratings (up to 150 A) increase power density in the discrete package, allowing for smaller size and weight designs. The 650 V EC7 diode can be used in a variety of applications with a main focus on string and micro inverters, data center UPS, offline UPS/residential UPS, online UPS/industrial UPS, residential air conditioning, and welding.

About the 1200 V Emitter Controlled 7 diode

The 1200 V family exhibits excellent softness with a low forward voltage (VF), low reverse recovery charge, and a maximum junction temperature Tj(max) of 175°C. These diodes are qualified for industrial applications according to the relevant tests of JEDEC 47/20/22. One special feature of the 1200 V family is its HV-H3TRB robustness, which enables higher system reliability in hard operating conditions. The TO247-2 2-pin package has a larger creepage distance between the pins than a conventional TO247 3-pin package. For 1200 V applications, this new package reduces the need for extra protection against shorts across the anode-cathode pins, such as adding extra insulation material. Altogether, this makes the 1200 V EC7 Rapid silicon competitive in terms of both price/performance offering.

More information about the discrete Emitter Controlled 7 SiC diodes

The soft and ultra-fast recovery 1200 V EC7 Si diode offers improved reliability for industrial and home appliance applications and also for solar MPPT boost or EV charging Vienna rectifier topologies. Additionally, using the TO247-2 package reduces the discharge related failure modes.

Documents

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Design resources

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