DC-DC power conversion for telecommunications infrastructure

DC-DC power converter solutions for telecommunication power supply units (PSU) for 5G small-cell and macro base stations and their corresponding subsystems

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Overview

Build more energy-efficient 5G telecom infrastructure and prepare for the higher power demands of AI integration with DC-DC converter circuit power semiconductor solutions. Choose from a wide range of recommended options that best fit your needs, regardless of preferred topology, switching configuration, or semiconductor material. Infineon has the answer for any challenge with our mastery of Si, SiC, and GaN power semiconductors, which help you to reduce electricity demand and save on TCO/OPEX.

Benefits

  • High efficiency
  • High power density
  • High reliability
  • Flexibility and high performance 
  • Monitoring and telemetry capability

Block diagram

About

About DC-DC power conversion solutions for telecom infrastructure

In the tabs below, discover the diverse solutions Infineon offers and recommends for telecom infrastructure DC-DC power converters. Solutions offer high efficiency, high power density, high reliability for reduced maintenance costs, flexible and high-performance digital controllers, and detailed monitoring and telemetry capability.

Powering RF power amplifiers and baseband processing

Infineon's comprehensive portfolio of power management products enables efficient and reliable power distribution for RF power amplifiers and baseband processing units.

Our products support a wide range of RF system power requirements, including: 12 V rail for low-voltage digital processing and intermediate bus voltage for PA supplies from 17 V to 52 V.

To cover this, Infineon's portfolio includes: MOSFETs, gate drivers, digital isolators, analog/digital controllers, hotswap and load-switch drivers/controllers, point-of-load (PoL) controllers, multi-phase controllers, and integrated power stages.

Our portfolio offers designers the flexibility to choose the optimal converter topology for intermediate bus converters for both signal path and RF PA supply. Discover how Infineon's power management solutions can help you optimize your RF system design.

Benefits of GaN in DC-DC conversion for telecom infrastructure

Gallium nitride (GaN) FETs have the characteristic of very low gate charge and very low resistivity per unit area. This makes GaN uniquely excellent for use in high-density telecom SMPS enabling very fast switching speeds with low switching loss and in a very small package size relative to its silicon equivalent. This provides very high efficiency in a very small solution size.

When used in combination with planar transformer techniques in high switching frequency LLC designs, GaN is the best technology choice. High winding capacitance means high winding charge, which must be moved during the dead time to realize the device ZVS. This means an impact on needed magnetizing current and dead time setting. GaN allows the best trade-off at high switching frequency (freq~500kHz) device losses vs. dead time setting and winding capacitance losses.

Explore Infineon's CoolGaN™ offering and experience the future of power.

Infineon CoolGaN™

About DC-DC power conversion solutions for telecom infrastructure

In the tabs below, discover the diverse solutions Infineon offers and recommends for telecom infrastructure DC-DC power converters. Solutions offer high efficiency, high power density, high reliability for reduced maintenance costs, flexible and high-performance digital controllers, and detailed monitoring and telemetry capability.

Powering RF power amplifiers and baseband processing

Infineon's comprehensive portfolio of power management products enables efficient and reliable power distribution for RF power amplifiers and baseband processing units.

Our products support a wide range of RF system power requirements, including: 12 V rail for low-voltage digital processing and intermediate bus voltage for PA supplies from 17 V to 52 V.

To cover this, Infineon's portfolio includes: MOSFETs, gate drivers, digital isolators, analog/digital controllers, hotswap and load-switch drivers/controllers, point-of-load (PoL) controllers, multi-phase controllers, and integrated power stages.

Our portfolio offers designers the flexibility to choose the optimal converter topology for intermediate bus converters for both signal path and RF PA supply. Discover how Infineon's power management solutions can help you optimize your RF system design.

Benefits of GaN in DC-DC conversion for telecom infrastructure

Gallium nitride (GaN) FETs have the characteristic of very low gate charge and very low resistivity per unit area. This makes GaN uniquely excellent for use in high-density telecom SMPS enabling very fast switching speeds with low switching loss and in a very small package size relative to its silicon equivalent. This provides very high efficiency in a very small solution size.

When used in combination with planar transformer techniques in high switching frequency LLC designs, GaN is the best technology choice. High winding capacitance means high winding charge, which must be moved during the dead time to realize the device ZVS. This means an impact on needed magnetizing current and dead time setting. GaN allows the best trade-off at high switching frequency (freq~500kHz) device losses vs. dead time setting and winding capacitance losses.

Explore Infineon's CoolGaN™ offering and experience the future of power.

Infineon CoolGaN™

Documents

Documents

Design resources

Developer community

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