Transformer Driver ICs

Overview

Infineon now also features the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC that provides a simple power-supply alternative to generate an asymmetric output voltage with its unique duty-cycle adjustment capability and frequency adjustment options, all of which contribute to highly efficient, customizable, and flexible design possibilities aimed at reducing system costs and enhancing reliability.

Products

About

Infineon now features the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. The IC features a unique duty-cycle adjustment capability, integrated temperature, short-circuit, and UVLO protections, and frequency adjustment options, all of which contribute to highly efficient, customizable, and flexible design possibilities aimed at reducing system costs and enhancing reliability.

Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions utilizing efficent power supplies. That’s why we offer new EiceDRIVER™ Power 2EP1xxR transformer driver IC solutions suitable for any isolated gate driver power switch, and any application. Designed to optimally supply gate drivers for various switches, it supports TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs, working seamlessly with EiceDRIVER™ gate driver ICs and other similar products.

Decades of application expertise and technology development at Infineon have produced a portfolio of gate driver and transformer driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, 500-1200 V level shift gate drivers, non-isolated low-side drivers.  We also offer transformer drivers to enable the right isolated power supply for galvanic isolated gate drivers.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.

Our EiceDRIVER™ transformer drivers enable power supplies for isolated gate drivers powering a variety of switch technologies such as IGBTs, SiC MOSFETs, GaN HEMTs and Schottkys, and others. These solutions include advanced features such as an integrated power stage, adjustable duty cyle, adjustable frequency, over current protection, overtemperature protection, ready output indication and small space-saving package. Further key features are the open loop isolated power supply, the adjustable short circuit protection and the plug and play solution. 

Infineon now features the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. The IC features a unique duty-cycle adjustment capability, integrated temperature, short-circuit, and UVLO protections, and frequency adjustment options, all of which contribute to highly efficient, customizable, and flexible design possibilities aimed at reducing system costs and enhancing reliability.

Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions utilizing efficent power supplies. That’s why we offer new EiceDRIVER™ Power 2EP1xxR transformer driver IC solutions suitable for any isolated gate driver power switch, and any application. Designed to optimally supply gate drivers for various switches, it supports TRENCHSTOP™ IGBTs, OptiMOS™ MOSFETs, CoolMOS™ superjunction MOSFETs, CoolGaN™ high electron mobility transistors, and CoolSiC™ MOSFETs, working seamlessly with EiceDRIVER™ gate driver ICs and other similar products.

Decades of application expertise and technology development at Infineon have produced a portfolio of gate driver and transformer driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, 500-1200 V level shift gate drivers, non-isolated low-side drivers.  We also offer transformer drivers to enable the right isolated power supply for galvanic isolated gate drivers.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.

Our EiceDRIVER™ transformer drivers enable power supplies for isolated gate drivers powering a variety of switch technologies such as IGBTs, SiC MOSFETs, GaN HEMTs and Schottkys, and others. These solutions include advanced features such as an integrated power stage, adjustable duty cyle, adjustable frequency, over current protection, overtemperature protection, ready output indication and small space-saving package. Further key features are the open loop isolated power supply, the adjustable short circuit protection and the plug and play solution. 

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