Radiation tolerant power

Designed for LEO space applications and constellations

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Infineon rad tolerant power for LEO applications and constellations

Engineered for low Earth orbit (LEO) applications and constellations, Infineon’s NewSpace radiation tolerant power solutions are ideal for mission lifetimes under five years.

Infineon’s NewSpace power solutions include plastic encapsulated rad tolerant by design MOSFETs for supporting vital functions of LEO satellite bus platform and payload operation.

Qualified for space applications according to AEC-Q101 standard, Infineon's rad tolerant power FETs are based on our enhanced CoolMOS™ technology and mature high-volume product processes.

Key features include:

  • Plastic encapsulated packaging
  • AEC-Q101 qualified
  • Total dose 30 kRads(Si)
  • SEE hardened up to 46 MeV∙cm2/mg

Target applications include:

  • Power conditioning unit
  • Power distribution unit
  • DC-DC converters

Contact Infineon HiRel sales to learn more about our NewSpace rad tolerant power solutions.

Radiation tolerant 60 V and 150 V N-channel MOSFETs

Infineon's Enhanced Commercial Power MOSFETs are designed for 2-5 year LEO missions and constellations. These products are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg and can withstand 30 krad(Si) of Total Ionizing Dose. 

The product family offers four different N-channel MOSFETs based on the unique Infineon CoolMOS™ super-junction technology. This makes them ideal for fast switching applications. There are two voltage options, 60 V and 150 V, supporting the most common bus voltages of 28 V and 54 V used in LEO satellites. The RDS(on) values range from 15 mΩ to 60 mΩ.

There are two plastic package options available, the surface mount TO-263 and the through hole TO-247. The TO-263 supports easy assembly and re-flow soldering, while the TO-247 can be used for an optimized cooling concept for higher currents.

Both package types have leads plated with matte tin to reduce whisker build. The radiation tolerant N-channel MOSFETs are qualified according to the automotive standard AEC-Q101 with an operating temperature from -40°C to +125°C.

Radiation tolerant -60 V P-channel MOSFET

Infineon's Enhanced Commercial Power MOSFETs are designed for 2-5 year LEO missions and constellations. These products are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg and can withstand 30 krad(Si) of Total Ionizing Dose.

The P-channel product family currently offers a radiation tolerant MOSFET, BUP06CP038F-01, based on Infineon’s high volume power technology. This makes it ideal for fast switching applications. Its voltage class is -60 V and RDS(on) value is 38 mΩ. 

The device is available in the surface mount TO-252-3 plastic package which supports easy assembly and re-flow soldering. Additionally, its leads are plated with matte tin to reduce whisker build. 

This radiation tolerant P-channel MOSFET is qualified for space applications according to the relevant tests of AEC-Q101. It is specified with the junction temperature from -55°C to +175°C.

Infineon rad tolerant power for LEO applications and constellations

Engineered for low Earth orbit (LEO) applications and constellations, Infineon’s NewSpace radiation tolerant power solutions are ideal for mission lifetimes under five years.

Infineon’s NewSpace power solutions include plastic encapsulated rad tolerant by design MOSFETs for supporting vital functions of LEO satellite bus platform and payload operation.

Qualified for space applications according to AEC-Q101 standard, Infineon's rad tolerant power FETs are based on our enhanced CoolMOS™ technology and mature high-volume product processes.

Key features include:

  • Plastic encapsulated packaging
  • AEC-Q101 qualified
  • Total dose 30 kRads(Si)
  • SEE hardened up to 46 MeV∙cm2/mg

Target applications include:

  • Power conditioning unit
  • Power distribution unit
  • DC-DC converters

Contact Infineon HiRel sales to learn more about our NewSpace rad tolerant power solutions.

Radiation tolerant 60 V and 150 V N-channel MOSFETs

Infineon's Enhanced Commercial Power MOSFETs are designed for 2-5 year LEO missions and constellations. These products are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg and can withstand 30 krad(Si) of Total Ionizing Dose. 

The product family offers four different N-channel MOSFETs based on the unique Infineon CoolMOS™ super-junction technology. This makes them ideal for fast switching applications. There are two voltage options, 60 V and 150 V, supporting the most common bus voltages of 28 V and 54 V used in LEO satellites. The RDS(on) values range from 15 mΩ to 60 mΩ.

There are two plastic package options available, the surface mount TO-263 and the through hole TO-247. The TO-263 supports easy assembly and re-flow soldering, while the TO-247 can be used for an optimized cooling concept for higher currents.

Both package types have leads plated with matte tin to reduce whisker build. The radiation tolerant N-channel MOSFETs are qualified according to the automotive standard AEC-Q101 with an operating temperature from -40°C to +125°C.

Radiation tolerant -60 V P-channel MOSFET

Infineon's Enhanced Commercial Power MOSFETs are designed for 2-5 year LEO missions and constellations. These products are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg and can withstand 30 krad(Si) of Total Ionizing Dose.

The P-channel product family currently offers a radiation tolerant MOSFET, BUP06CP038F-01, based on Infineon’s high volume power technology. This makes it ideal for fast switching applications. Its voltage class is -60 V and RDS(on) value is 38 mΩ. 

The device is available in the surface mount TO-252-3 plastic package which supports easy assembly and re-flow soldering. Additionally, its leads are plated with matte tin to reduce whisker build. 

This radiation tolerant P-channel MOSFET is qualified for space applications according to the relevant tests of AEC-Q101. It is specified with the junction temperature from -55°C to +175°C.