RF mixer and detector Schottky diode

Infineon RF mixer and detector Schottky diode

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Overview

Infineon RF Schottky diodes are silicon low-barrier N-type devices that come with various junction diode configurations for use in highly sensitive power detector, sampling, or mixer circuits.

Key Features

  • Low leakage current
  • Low signal distortion level
  • High efficiency
  • Low-power consumption

Products

About

Infineon RF Schottky diodes are silicon low barrier N-type devices and, unlike other solutions available in the market, they come with various junction diode configurations which can be used for very sensitive power detector circuits, in sampling circuits or mixer circuits.

RF Schottky diodes consists of a wide portfolio offering both leaded and leadless packages. They come in various configurations: single, dual, common cathode.

  • Power detection in wireless LAN and Wi-Fi routers
  • Power detection in mobile devices
  • Power detection in wireless applications in ISM bands
  • Mixer in 24 GHz passive radar systems
  • Mixer in C- and Ku- band LNB receivers

Infineon RF Schottky diodes are silicon low barrier N-type devices and, unlike other solutions available in the market, they come with various junction diode configurations which can be used for very sensitive power detector circuits, in sampling circuits or mixer circuits.

RF Schottky diodes consists of a wide portfolio offering both leaded and leadless packages. They come in various configurations: single, dual, common cathode.

  • Power detection in wireless LAN and Wi-Fi routers
  • Power detection in mobile devices
  • Power detection in wireless applications in ISM bands
  • Mixer in 24 GHz passive radar systems
  • Mixer in C- and Ku- band LNB receivers

Documents

Design resources

Developer community

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