45 V-80 V N-channel power MOSFETs

OptiMOS™ and StrongIRFET™ N-channel power MOSFETs 45 V-80 V

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Overview

Infineon's portfolio of 45 V-80 V N-channel MOSFETs includes OptiMOS™ and StrongIRFET™ technologies for low-, medium-, and high-power applications. 

Key Features

  • Ultra-low RDS(on)
  • High current carrying capability
  • Wide variety of packages available
  • Space saving packages
  • High power density

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Products

About

45 V-80 V N-channel product portfolio

With an extensive product portfolio of N-channel MOSFETs in the 45 V-80 V range, Infineon has your needs covered for both industrial and automotive applications. Infineon’s products include OptiMOS™ and StrongIRFET™ silicon die technologies which address requirements for both low- and high switching frequencies. The product family meets all power needs by offering both surface-mount and through-hole devices.

Additionally, Infineon offers a wide selection of powerful and space saving N-channel MOSFETs including dual and single N-channel power MOSFETs in an SO8 Package.

60 V MOSFETs

AC-DC designers face the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS™ 5 power MOSFETs in 60 V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering including PQFN 3.3x3.3, SuperSO8, PQFN 5x6 Dual-Side Cooling, and PQFN 3.3x3.3 Source-Down. 

OptiMOS™ Linear FET helps you avoid the compromise between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

OptiMOS™ 5 60 V
OptiMOS™ 6 60 V
StrongIRFET™ 2 60 V
OptiMOS™ Linear FET
OptiMOS™ 80 V Silicon MOSFETs

OptiMOS™ 8 Lowest Ron and optimised for high levels of paralleling targeting high output power synchronous rectification, motor control & static switches..

OptiMOS™ 7 Balanced Ron-FOM technology targeting medium to low output power synchronous rectification

OptiMOS™ 6 Our leading technology with lowest Qg for resonant circuits plus as active switch, eg as high side in a buck converter

OptiMOS™ 5 Universally known with excellent performance/price ratio in a wide range of package options

OptiMOS™ Linear FET for linear mode operation in the saturation region with extended safe operating area (SOA)

StrongIRFET™ 2 Portfolio with excellent price/performance ratio 

OptiMOS™ 5 80 V
OptiMOS™ 6 80 V
StrongIRFET™ 2 80 V
OptiMOS™ Linear FET

45 V-80 V N-channel product portfolio

With an extensive product portfolio of N-channel MOSFETs in the 45 V-80 V range, Infineon has your needs covered for both industrial and automotive applications. Infineon’s products include OptiMOS™ and StrongIRFET™ silicon die technologies which address requirements for both low- and high switching frequencies. The product family meets all power needs by offering both surface-mount and through-hole devices.

Additionally, Infineon offers a wide selection of powerful and space saving N-channel MOSFETs including dual and single N-channel power MOSFETs in an SO8 Package.

60 V MOSFETs

AC-DC designers face the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS™ 5 power MOSFETs in 60 V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering including PQFN 3.3x3.3, SuperSO8, PQFN 5x6 Dual-Side Cooling, and PQFN 3.3x3.3 Source-Down. 

OptiMOS™ Linear FET helps you avoid the compromise between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

OptiMOS™ 5 60 V
OptiMOS™ 6 60 V
StrongIRFET™ 2 60 V
OptiMOS™ Linear FET

OptiMOS™ 80 V Silicon MOSFETs

OptiMOS™ 8 Lowest Ron and optimised for high levels of paralleling targeting high output power synchronous rectification, motor control & static switches..

OptiMOS™ 7 Balanced Ron-FOM technology targeting medium to low output power synchronous rectification

OptiMOS™ 6 Our leading technology with lowest Qg for resonant circuits plus as active switch, eg as high side in a buck converter

OptiMOS™ 5 Universally known with excellent performance/price ratio in a wide range of package options

OptiMOS™ Linear FET for linear mode operation in the saturation region with extended safe operating area (SOA)

StrongIRFET™ 2 Portfolio with excellent price/performance ratio 

OptiMOS™ 5 80 V
OptiMOS™ 6 80 V
StrongIRFET™ 2 80 V
OptiMOS™ Linear FET

Documents

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