45 V-80 V N-channel power MOSFETs

OptiMOS™ and StrongIRFET™ N-channel power MOSFETs 45 V-80 V

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Overview

Infineon's portfolio of 45 V-80 V N-channel MOSFETs includes OptiMOS™ and StrongIRFET™ technologies for low-, medium-, and high-power applications. 

Key Features

  • Ultra-low RDS(on)
  • High current carrying capability
  • Wide variety of packages available
  • Space saving packages
  • High power density

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Products

About

45 V-80 V N-channel product portfolio

With an extensive product portfolio of N-channel MOSFETs in the 45 V-80 V range, Infineon has your needs covered for both industrial and automotive applications. Infineon’s products include OptiMOS™ and StrongIRFET™ silicon die technologies which address requirements for both low- and high switching frequencies. The product family meets all power needs by offering both surface-mount and through-hole devices.

Additionally, Infineon offers a wide selection of powerful and space saving N-channel MOSFETs including dual and single N-channel power MOSFETs in an SO8 Package.

OptiMOS™ 60 V N-channel MOSFETs

A common challenge that AC-DC designers face is how to improve system efficiency and power density while reducing costs. Infineon’s OptiMOS™ 5 60 V portfolio features 15% lower drain source on resistance (RDS(on)) and 31% lower figure of merit (RDS(on) x Qg) compared to alternative devices and offers a perfect solution to this problem.

In addition to the higher switching frequencies of the OptiMOS™ 5 60 V N-channel MOSFETs, this family also offers higher efficiency and a significant reduction of the voltage overshoot which reduces the need for a snubber circuit and saves engineering effort and cost.

Since these products are optimized for synchronous rectification, they are ideal for switched mode power supplies (SMPS), as well as a broad range of industrial applications such as motor control, solar micro inverters, and fast switching DC-DC converters.

OptiMOS™ 60 V N-channel MOSFETs
StrongIRFET™ 60 V N-channel MOSFETs

Designed for a wide variety of industrial applications, the StrongIRFET™ 60 V MOSFETs portfolio offers ultra-low on-state resistance RDS(on), a high current carrying capability, and improves performance in low-frequency applications. Each device in the product family is 100% avalanche-tested at industry-highest avalanche current levels to ensure the most robust solution for demanding industrial applications. The devices are available in through-hole and surface-mount packages.

StrongIRFET™ 60 V N-channel MOSFETs
Logic level MOSFETs

Infineon’s 60 V and 80 V logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapters, and telecom applications. Thanks to the low-gate charge (Qg) reducing switching losses without compromising conduction losses. These improved figures of merit allow operations at high switching frequencies. The OptiMOS™ 5 and IR MOSFET™ logic level products are also available in the 100 V voltage class.

Logic level MOSFETs
OptiMOS™ 80 V N-channel MOSFETs

As an industry leader, Infineon’s OptiMOS™ 5 80 V power MOSFETs portfolio of packages are designed for synchronous rectification in telecom and server power supply applications, as well as in solar, low-voltage drives, and laptop adapters.

OptiMOS™ 5 80 V MOSFETs have an RDS(on) reduction of up to 43% compared to the previous generation and are also available in the 100 V voltage class.

OptiMOS™ 80 V N-channel MOSFETs
Automotive applications

Infineon provides a large product portfolio of N-channel MOSFETS in the 12 V - 40 V that are automotive-qualified. To find out more, visit our automotive MOSFET page.

Learn more

45 V-80 V N-channel product portfolio

With an extensive product portfolio of N-channel MOSFETs in the 45 V-80 V range, Infineon has your needs covered for both industrial and automotive applications. Infineon’s products include OptiMOS™ and StrongIRFET™ silicon die technologies which address requirements for both low- and high switching frequencies. The product family meets all power needs by offering both surface-mount and through-hole devices.

Additionally, Infineon offers a wide selection of powerful and space saving N-channel MOSFETs including dual and single N-channel power MOSFETs in an SO8 Package.

OptiMOS™ 60 V N-channel MOSFETs

A common challenge that AC-DC designers face is how to improve system efficiency and power density while reducing costs. Infineon’s OptiMOS™ 5 60 V portfolio features 15% lower drain source on resistance (RDS(on)) and 31% lower figure of merit (RDS(on) x Qg) compared to alternative devices and offers a perfect solution to this problem.

In addition to the higher switching frequencies of the OptiMOS™ 5 60 V N-channel MOSFETs, this family also offers higher efficiency and a significant reduction of the voltage overshoot which reduces the need for a snubber circuit and saves engineering effort and cost.

Since these products are optimized for synchronous rectification, they are ideal for switched mode power supplies (SMPS), as well as a broad range of industrial applications such as motor control, solar micro inverters, and fast switching DC-DC converters.

OptiMOS™ 60 V N-channel MOSFETs

StrongIRFET™ 60 V N-channel MOSFETs

Designed for a wide variety of industrial applications, the StrongIRFET™ 60 V MOSFETs portfolio offers ultra-low on-state resistance RDS(on), a high current carrying capability, and improves performance in low-frequency applications. Each device in the product family is 100% avalanche-tested at industry-highest avalanche current levels to ensure the most robust solution for demanding industrial applications. The devices are available in through-hole and surface-mount packages.

StrongIRFET™ 60 V N-channel MOSFETs

Logic level MOSFETs

Infineon’s 60 V and 80 V logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapters, and telecom applications. Thanks to the low-gate charge (Qg) reducing switching losses without compromising conduction losses. These improved figures of merit allow operations at high switching frequencies. The OptiMOS™ 5 and IR MOSFET™ logic level products are also available in the 100 V voltage class.

Logic level MOSFETs

OptiMOS™ 80 V N-channel MOSFETs

As an industry leader, Infineon’s OptiMOS™ 5 80 V power MOSFETs portfolio of packages are designed for synchronous rectification in telecom and server power supply applications, as well as in solar, low-voltage drives, and laptop adapters.

OptiMOS™ 5 80 V MOSFETs have an RDS(on) reduction of up to 43% compared to the previous generation and are also available in the 100 V voltage class.

OptiMOS™ 80 V N-channel MOSFETs

Automotive applications

Infineon provides a large product portfolio of N-channel MOSFETS in the 12 V - 40 V that are automotive-qualified. To find out more, visit our automotive MOSFET page.

Learn more

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Design resources

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