Silicon Carbide CoolSiC™ MOSFET modules

CoolSiC™ MOSFET module technology in different packages and topologies

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Overview

Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize never-before-seen levels of efficiency and power density.

Key Features

  • Lower switching losses
  • Intrinsic body diode
  • Superior gate oxide reliability
  • Threshold voltage of Vth > 4 V

Products

About

Introduction to CoolSiC™ MOSFET modules

Our selection of CoolSiC™ Silicon Carbide MOSFET power modules are available in different configurations such as 3-level, half-bridge, fourpack, sixpack, or as booster, the 1200 V and 2000 V SiC MOSFET modules offer a superior gate-oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses.

Not only can all EasyPACK™, EasyDUAL™, and 62mm CoolSiC™ MOSFET power modules be ordered with pre-applied Thermal Interface Material (TIM), but additional features can be offered as well. For example, our Easy modules with a high-performance aluminum nitride (AlN) ceramic significantly improve the thermal performance of RthJH.

More about our CoolSiC™ Technology
More about Thermal interface material (TIM)
About automotive CoolSiC™ MOSFET modules

We offer a wide range of CoolSiC™ MOSFET automotive power modules for hybrid and electric vehicle applications: Traction inverters (to convert DC from high-voltage battery to AC for the electric motors), on-board battery chargers, auxiliary inverters, HV/LV DC-DC converter, and specific Fuel-Cell Electric Vehicle (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter.

CoolSiC™ MOSFET automotive power modules
Benefits of silicon carbide CoolSiC™ MOSFET modules

When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies. In addition, Silicon Carbide (SiC) power modules can be tailored to different application needs and are available in topologies from 52.9 mOhm to 1.44 mOhm RDS.

Beside that silicon carbide CoolSiC™ MOSFET modules incorporate important key benefits, such as an increased power density, reduced cooling effort, reduced system, and operational cost.

Gate driver ICs for SiC MOSFETs

Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easily handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on our coreless transformer technology are recommended as the most suitable.

About EiceDRIVER™ ICs for silicon carbide MOSFETs

Introduction to CoolSiC™ MOSFET modules

Our selection of CoolSiC™ Silicon Carbide MOSFET power modules are available in different configurations such as 3-level, half-bridge, fourpack, sixpack, or as booster, the 1200 V and 2000 V SiC MOSFET modules offer a superior gate-oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses.

Not only can all EasyPACK™, EasyDUAL™, and 62mm CoolSiC™ MOSFET power modules be ordered with pre-applied Thermal Interface Material (TIM), but additional features can be offered as well. For example, our Easy modules with a high-performance aluminum nitride (AlN) ceramic significantly improve the thermal performance of RthJH.

More about our CoolSiC™ Technology
More about Thermal interface material (TIM)

About automotive CoolSiC™ MOSFET modules

We offer a wide range of CoolSiC™ MOSFET automotive power modules for hybrid and electric vehicle applications: Traction inverters (to convert DC from high-voltage battery to AC for the electric motors), on-board battery chargers, auxiliary inverters, HV/LV DC-DC converter, and specific Fuel-Cell Electric Vehicle (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter.

CoolSiC™ MOSFET automotive power modules

Benefits of silicon carbide CoolSiC™ MOSFET modules

When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies. In addition, Silicon Carbide (SiC) power modules can be tailored to different application needs and are available in topologies from 52.9 mOhm to 1.44 mOhm RDS.

Beside that silicon carbide CoolSiC™ MOSFET modules incorporate important key benefits, such as an increased power density, reduced cooling effort, reduced system, and operational cost.

Gate driver ICs for SiC MOSFETs

Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easily handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on our coreless transformer technology are recommended as the most suitable.

About EiceDRIVER™ ICs for silicon carbide MOSFETs

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Design resources

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