12 V-40 V N-channel power MOSFETs

Low-voltage power MOSFETs for multiple applications

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Overview

Infineon's extensive portfolio of 12 V-40 V N-channel MOSFETs are small and compact and include OptiMOS™ and StrongIRFET™ technologies for low-, medium-, and high-power applications. The portfolio includes 20 V N-channel power MOSFETs, 30 V N-channel MOSFETs, and 40 V N-channel MOSFETs. Infineon provides space-saving solutions that not only optimize thermal performance but also increase current ratings while reducing the footprint.

Key Features

  • High power density
  • Small package outlines
  • Optimized thermal performance
  • Low-output charges

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Products

About

15 V-40 V N-channel MOSFETs product portfolio

Infineon's power MOSFETs 15 V-40 V product portfolio is divided into two categories. The first category is “active and preferred” which refers to the latest technology available offering best-in-class performance and low RDS(on). The second category is “active” and is ideal for broad switching frequencies and offers the industry’s best figure of merit (FOM) along with high efficiency and power density. The broad portfolio of OptiMOS™ and StrongIRFET™ provides solutions for a wide range of needs.

The portfolio of N-channel MOSFETs designed for 15 V-40 V are ideal for applications such as DC motor drives, battery applications, load switches, and electric toys. The small and compact design allows both OptiMOS™ and StrongIRFET™ solutions to offer a reduced footprint area as well as increased ratings and optimized thermal performance across all these and similar applications.

Infineon provides a large product portfolio of N-channel MOSFETs in the 15 V-40 V that are automotive-qualified. To find out more, visit our automotive MOSFETs page.

15 V MOSFETs

The OptiMOS™ 7 15 V MOSFET represents the latest Infineon’s silicon trench MOSFET technology specifically optimized for high-frequency SMPS applications. With the industry’s best figures-of-merit (FoMs), it helps achieve high efficiency, high-power density, and high system reliability.

Key highlights

• Unique technology: The 15-volt power MOSFET trench technology sets you apart from the competition and enhances your product's performance in DC-DC converters.

• Improved performance: This technology offers improved FoMs compared to the 25-volt node, leading to reduced switching losses.

• Enhanced features: The devices come with excellent switching performance, low overshoot, and in standard gate as well as center gate footprint that easily integrates into existing PCB layouts.

• Thermal management: The dual-side cooling variants enhance overall thermal performance, boosting system efficiency, reducing form factor, and maintaining lower temperatures.

• Power density and flexibility: It offers high-power density and flexibility in PCB design, enabling faster time-to-market with easy design integration. 

Discover OptiMOS™ 7 15 V
25V & 30V MOSFETs

Infineon’s family of 25 and 30V MOSFETs is composed of OptiMOS™ and StrongIRFET™ technologies to meet your design requirements, offering solutions for both low and high switching frequencies with a wide range of package offerings.

OptiMOS™ 5 power MOSFETs in 25 V and 30 V enable the highest power density and energy efficiency, both in standby and full operation. The family is available in SuperSO8 5x6, PQFN 3.3x3.3, Source-Down PQFN 3.3x3.3, PQFN 2x2, and Power Block packages.

OptiMOS™ 7 in 25 V represents Infineon´s latest generation of power MOSFETs and comes with devices optimized for hard-switching as well as soft-switching topologies. The family is available in the innovative Source-Down PQFN 3.3x3.3 package.

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features low a RDS(on) in a variety of packages. This product addresses a broad range of applications from low- to high-switching frequency. 

Discover OptiMOS™ 5 25 V and 30 V
Discover OptiMOS™ 7 25 V
Discover StrongIRFET™ 2 30 V
40 V MOSFETs

Infineon’s family of 40V MOSFETs includes the latest OptiMOS™ technology to meet the str

AC-DC designers face the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS™ 5 power MOSFETs in 40 V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

The OptiMOS™ 6 family of 40 V devices set a new technology standard for discrete power MOSFETs. With the OptiMOS™ 6 40 V logic level product family, Infineon offers a benchmark solution for applications requiring lower gate drive capability.

Designed to meet the requirements of specific applications, the OptiMOS™ 7 series sets a new standard in power MOSFET technology.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

Explore OptiMOS™ 5 40 V
Explore OptiMOS™ 6 40 V
Explore OptiMOS™ 7 40 V
Explore StrongIRFET™ 2 40 V

15 V-40 V N-channel MOSFETs product portfolio

Infineon's power MOSFETs 15 V-40 V product portfolio is divided into two categories. The first category is “active and preferred” which refers to the latest technology available offering best-in-class performance and low RDS(on). The second category is “active” and is ideal for broad switching frequencies and offers the industry’s best figure of merit (FOM) along with high efficiency and power density. The broad portfolio of OptiMOS™ and StrongIRFET™ provides solutions for a wide range of needs.

The portfolio of N-channel MOSFETs designed for 15 V-40 V are ideal for applications such as DC motor drives, battery applications, load switches, and electric toys. The small and compact design allows both OptiMOS™ and StrongIRFET™ solutions to offer a reduced footprint area as well as increased ratings and optimized thermal performance across all these and similar applications.

Infineon provides a large product portfolio of N-channel MOSFETs in the 15 V-40 V that are automotive-qualified. To find out more, visit our automotive MOSFETs page.

15 V MOSFETs

The OptiMOS™ 7 15 V MOSFET represents the latest Infineon’s silicon trench MOSFET technology specifically optimized for high-frequency SMPS applications. With the industry’s best figures-of-merit (FoMs), it helps achieve high efficiency, high-power density, and high system reliability.

Key highlights

• Unique technology: The 15-volt power MOSFET trench technology sets you apart from the competition and enhances your product's performance in DC-DC converters.

• Improved performance: This technology offers improved FoMs compared to the 25-volt node, leading to reduced switching losses.

• Enhanced features: The devices come with excellent switching performance, low overshoot, and in standard gate as well as center gate footprint that easily integrates into existing PCB layouts.

• Thermal management: The dual-side cooling variants enhance overall thermal performance, boosting system efficiency, reducing form factor, and maintaining lower temperatures.

• Power density and flexibility: It offers high-power density and flexibility in PCB design, enabling faster time-to-market with easy design integration. 

Discover OptiMOS™ 7 15 V

25V & 30V MOSFETs

Infineon’s family of 25 and 30V MOSFETs is composed of OptiMOS™ and StrongIRFET™ technologies to meet your design requirements, offering solutions for both low and high switching frequencies with a wide range of package offerings.

OptiMOS™ 5 power MOSFETs in 25 V and 30 V enable the highest power density and energy efficiency, both in standby and full operation. The family is available in SuperSO8 5x6, PQFN 3.3x3.3, Source-Down PQFN 3.3x3.3, PQFN 2x2, and Power Block packages.

OptiMOS™ 7 in 25 V represents Infineon´s latest generation of power MOSFETs and comes with devices optimized for hard-switching as well as soft-switching topologies. The family is available in the innovative Source-Down PQFN 3.3x3.3 package.

Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features low a RDS(on) in a variety of packages. This product addresses a broad range of applications from low- to high-switching frequency. 

Discover OptiMOS™ 5 25 V and 30 V
Discover OptiMOS™ 7 25 V
Discover StrongIRFET™ 2 30 V

40 V MOSFETs

Infineon’s family of 40V MOSFETs includes the latest OptiMOS™ technology to meet the str

AC-DC designers face the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS™ 5 power MOSFETs in 40 V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

The OptiMOS™ 6 family of 40 V devices set a new technology standard for discrete power MOSFETs. With the OptiMOS™ 6 40 V logic level product family, Infineon offers a benchmark solution for applications requiring lower gate drive capability.

Designed to meet the requirements of specific applications, the OptiMOS™ 7 series sets a new standard in power MOSFET technology.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

Explore OptiMOS™ 5 40 V
Explore OptiMOS™ 6 40 V
Explore OptiMOS™ 7 40 V
Explore StrongIRFET™ 2 40 V

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