SRAMs (Static Random Access Memory)

Covering 256 KB to 144 MB in low-power and high-speed variants with on-chip ECC, QML certification, and long-term product support

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Asynchronous and Synchronous SRAMs: 256 KB to 144 MB

SRAM (static random access memory) is a type of volatile memory that retains data without refresh cycles, giving SRAMs deterministic read access times and making them the preferred choice for cache buffers, packet lookup tables, and safety-critical embedded systems.

Infineon's SRAMs portfolio is organized into two top-level families:

  • Asynchronous SRAM: no clock required; data is read directly in response to address transitions. Includes MOBL™ micropower devices for battery-backed applications and fast asynchronous SRAM with PowerSnooze™ for cache and buffer use. Densities from 256 Kb to 64 Mb. Available in TSOP, BGA, and SOP packages.
  • Synchronous SRAM: clocked interface for higher throughput. Includes DDR sync SRAMs (up to 550 MHz), QDR™ sync SRAMs (up to 1066 MHz) for networking, and synchronous SRAM with on-chip ECC for error-sensitive designs. Densities from 9 Mb to 144 Mb.

All devices are RoHS compliant. Select asynchronous SRAM ICs are QML certified for defense applications.

Read more about synchronous SRAM here
Read more about asynchronous SRAM here

Key engineering benefits of Infineon static RAM memory

  • Deterministic access times without refresh overhead

Unlike DRAM, SRAMs retain data without refresh cycles, delivering deterministic read access from 8 ns across the full operating temperature range — no latency penalties, no timing uncertainty.

  • On-Chip ECC for Soft-Error protection

Infineon is the only supplier offering high-density SRAMs with on-chip error correction code (ECC), achieving a soft error rate below 0.1 FIT/Mbit and eliminating the need for external error correction logic.

  • Portfolio depth from 256 KB to 144 MB

A single qualified supplier covers the full density range required across networking, automotive, industrial, and defense designs, from 256 KB micropower SRAMs for battery-backed data logging to 144 MB synchronous SRAMs for high-bandwidth packet processing.

  • Long-Term supply and stable availability

Industrial, defense, and automotive programs require component availability across lifecycles of 10 years or more. Infineon provides a stable supply commitment and long-term product support across the full static RAM portfolio, reducing redesign risk and supporting multi-year production programs.

SRAMs key parameters: Density, speed, interface, and power

  • Density: 256 KB to 144 MB

Density defines how much data the SRAM chip can store. Infineon SRAMs cover 256 KB to 144 MB. Select the smallest density that meets the working data set to minimize power and cost.

  • Access time / Clock speed: 8 ns to 1066 MHz

Access time is the critical parameter for asynchronous designs; clock frequency for synchronous designs. Select the value that matches the processor's memory bus timing without requiring wait states.

Asynchronous SRAMs use a parallel bus with no clock – lower complexity, deterministic latency. Synchronous SRAMs use a clocked interface for higher bandwidth.

  • Power Mode: Standard or MOBL™

MOBL™ SRAMs reduce standby current to 3 µA, suited to battery-powered designs. Standard SRAMs are appropriate for always-powered applications.

Infineon sRAMs speed, ECC, and reliability data

  • Access speed: From 8 ns to 1066 MHz

Infineon SRAMs cover the full speed range from 8 ns asynchronous access through 1066 MHz synchronous clock operation. Detailed timing parameters, derating curves, and AC/DC specifications are available on the asynchronous and synchronous SRAM product pages.

  • Soft-Error rate: Below 0.1 FIT/Mbit

Synchronous SRAMs with on-chip ECC achieve a soft error rate below 0.1 FIT/Mbit — the lowest available in high-density standard sync static RAM. Single-bit error correction is handled on-chip, with no external ECC logic required.

  • Qualification: QML-certified and RoHS compliant

Select Infineon SRAMs are QML certified for defense and aerospace programs, meeting MIL-PRF-38535 requirements. All devices are RoHS compliant and available in industry-standard TSOP, BGA, and SOP packages.

SRAMs use cases: networking, automotive, and defense

  • Networking and communications: packet lookup and buffer memory

SRAMs are the standard memory for packet classification, flow-state tracking, and statistics counting in network line cards – applications where DRAM burst-mode penalties are not acceptable. Infineon QDR™ and DDR synchronous SRAMs cover 550 MHz to 1066 MHz for these workloads.

  • Automotive and industrial: cache and expansion memory

Automotive ECUs and industrial controllers running real-time operating systems require deterministic cache and expansion memory with guaranteed worst-case access latency. Infineon asynchronous SRAM with access times from 8 ns provides this without the refresh-induced latency of DRAM. MOBL™ micropower static RAM is used in battery-backed data logging and event recording systems, where standby current below 3 µA extends backup battery life.

Defense and aerospace programs require MIL-PRF-38535-qualified devices. Select Infineon SRAMs are QML certified and available in TSOP and BGA packages for data storage, program memory, and scratchpad applications

Discover more about SRAM applications here

SRAMs selection guide: interface, density, speed, and power

  • Step 1: Choose interface type. Select asynchronous SRAMs for parallel bus designs requiring deterministic latency. Select synchronous SRAMs for higher bandwidth clocked interfaces. Choose QDR™ for balanced read/write workloads; DDR for read-intensive applications.
  • Step 2: Determine required density. Select the smallest density that covers this requirement with 20% headroom for future firmware growth.
  • Step 3: Match access time or clock speed to your bus timing. For asynchronous designs, confirm the processor's memory bus cycle time and select SRAMs with an access time equal to or faster than that value. For synchronous designs, select a device rated at or above your target clock frequency.
  • Step 4: Evaluate power requirements. Select MOBL™ SRAMs for standby current below 3 µA in battery-powered designs. Standard SRAMs suit always-on powered applications.
  • Step 5: Confirm qualification requirements. For defense or aerospace applications requiring MIL-PRF-38535 compliance, choose QML-certified asynchronous SRAM ICs. For commercial and industrial applications, all devices are RoHS compliant and available in industry-standard packages.

Infineon Static RAM: 256 KB to 144 MB with QML certification

Infineon offers the industry's broadest portfolio of low-power and high-speed SRAM memory, covering densities from 256 KB to 144 MB across asynchronous and synchronous architectures. The asynchronous SRAM range spans MOBL™ micropower devices with 3 µA standby current through fast devices with 8 ns access times. The synchronous range includes DDR sync SRAMs at up to 550 MHz, QDR™ sync SRAMs at up to 1066 MHz and synchronous SRAM with on-chip ECC delivering a soft error rate below 0.1 FIT/Mbit.

All devices are RoHS compliant. Select asynchronous SRAM ICs are QML certified for defense and aerospace applications. Infineon provides stable supply and long-term product support across the full SRAM portfolio, reducing obsolescence risk for programs with 10-year or longer lifecycles.

Read more about SRAM longevity here

SRAMs evaluation kits, SPICE models, and application notes

Datasheets and parametric tables – Full electrical characterization, timing diagrams, and package mechanical drawings are available per device on the relevant product page, supporting system-level timing analysis and PCB layout design.

SPICE Models - SPICE simulation models are available for key SRAM IC variants, enabling signal integrity and timing margin estimation in circuit simulation before hardware build.

Application notes – Design-in documentation covers asynchronous SRAM bus interface design, synchronous SRAM clock routing guidelines, on-chip EEC implementation, and MOBL™ battery-backup circuit design.

Parametric selection tool – Use the Infineon parametric selector to filter the SRAM portfolio by density, access time, interface type, supply voltage, package, and qualification level to identify the right static RAM for your application.

Asynchronous and Synchronous SRAMs: 256 KB to 144 MB

SRAM (static random access memory) is a type of volatile memory that retains data without refresh cycles, giving SRAMs deterministic read access times and making them the preferred choice for cache buffers, packet lookup tables, and safety-critical embedded systems.

Infineon's SRAMs portfolio is organized into two top-level families:

  • Asynchronous SRAM: no clock required; data is read directly in response to address transitions. Includes MOBL™ micropower devices for battery-backed applications and fast asynchronous SRAM with PowerSnooze™ for cache and buffer use. Densities from 256 Kb to 64 Mb. Available in TSOP, BGA, and SOP packages.
  • Synchronous SRAM: clocked interface for higher throughput. Includes DDR sync SRAMs (up to 550 MHz), QDR™ sync SRAMs (up to 1066 MHz) for networking, and synchronous SRAM with on-chip ECC for error-sensitive designs. Densities from 9 Mb to 144 Mb.

All devices are RoHS compliant. Select asynchronous SRAM ICs are QML certified for defense applications.

Read more about synchronous SRAM here
Read more about asynchronous SRAM here

Key engineering benefits of Infineon static RAM memory

  • Deterministic access times without refresh overhead

Unlike DRAM, SRAMs retain data without refresh cycles, delivering deterministic read access from 8 ns across the full operating temperature range — no latency penalties, no timing uncertainty.

  • On-Chip ECC for Soft-Error protection

Infineon is the only supplier offering high-density SRAMs with on-chip error correction code (ECC), achieving a soft error rate below 0.1 FIT/Mbit and eliminating the need for external error correction logic.

  • Portfolio depth from 256 KB to 144 MB

A single qualified supplier covers the full density range required across networking, automotive, industrial, and defense designs, from 256 KB micropower SRAMs for battery-backed data logging to 144 MB synchronous SRAMs for high-bandwidth packet processing.

  • Long-Term supply and stable availability

Industrial, defense, and automotive programs require component availability across lifecycles of 10 years or more. Infineon provides a stable supply commitment and long-term product support across the full static RAM portfolio, reducing redesign risk and supporting multi-year production programs.

SRAMs key parameters: Density, speed, interface, and power

  • Density: 256 KB to 144 MB

Density defines how much data the SRAM chip can store. Infineon SRAMs cover 256 KB to 144 MB. Select the smallest density that meets the working data set to minimize power and cost.

  • Access time / Clock speed: 8 ns to 1066 MHz

Access time is the critical parameter for asynchronous designs; clock frequency for synchronous designs. Select the value that matches the processor's memory bus timing without requiring wait states.

Asynchronous SRAMs use a parallel bus with no clock – lower complexity, deterministic latency. Synchronous SRAMs use a clocked interface for higher bandwidth.

  • Power Mode: Standard or MOBL™

MOBL™ SRAMs reduce standby current to 3 µA, suited to battery-powered designs. Standard SRAMs are appropriate for always-powered applications.

Infineon sRAMs speed, ECC, and reliability data

  • Access speed: From 8 ns to 1066 MHz

Infineon SRAMs cover the full speed range from 8 ns asynchronous access through 1066 MHz synchronous clock operation. Detailed timing parameters, derating curves, and AC/DC specifications are available on the asynchronous and synchronous SRAM product pages.

  • Soft-Error rate: Below 0.1 FIT/Mbit

Synchronous SRAMs with on-chip ECC achieve a soft error rate below 0.1 FIT/Mbit — the lowest available in high-density standard sync static RAM. Single-bit error correction is handled on-chip, with no external ECC logic required.

  • Qualification: QML-certified and RoHS compliant

Select Infineon SRAMs are QML certified for defense and aerospace programs, meeting MIL-PRF-38535 requirements. All devices are RoHS compliant and available in industry-standard TSOP, BGA, and SOP packages.

SRAMs use cases: networking, automotive, and defense

  • Networking and communications: packet lookup and buffer memory

SRAMs are the standard memory for packet classification, flow-state tracking, and statistics counting in network line cards – applications where DRAM burst-mode penalties are not acceptable. Infineon QDR™ and DDR synchronous SRAMs cover 550 MHz to 1066 MHz for these workloads.

  • Automotive and industrial: cache and expansion memory

Automotive ECUs and industrial controllers running real-time operating systems require deterministic cache and expansion memory with guaranteed worst-case access latency. Infineon asynchronous SRAM with access times from 8 ns provides this without the refresh-induced latency of DRAM. MOBL™ micropower static RAM is used in battery-backed data logging and event recording systems, where standby current below 3 µA extends backup battery life.

Defense and aerospace programs require MIL-PRF-38535-qualified devices. Select Infineon SRAMs are QML certified and available in TSOP and BGA packages for data storage, program memory, and scratchpad applications

Discover more about SRAM applications here

SRAMs selection guide: interface, density, speed, and power

  • Step 1: Choose interface type. Select asynchronous SRAMs for parallel bus designs requiring deterministic latency. Select synchronous SRAMs for higher bandwidth clocked interfaces. Choose QDR™ for balanced read/write workloads; DDR for read-intensive applications.
  • Step 2: Determine required density. Select the smallest density that covers this requirement with 20% headroom for future firmware growth.
  • Step 3: Match access time or clock speed to your bus timing. For asynchronous designs, confirm the processor's memory bus cycle time and select SRAMs with an access time equal to or faster than that value. For synchronous designs, select a device rated at or above your target clock frequency.
  • Step 4: Evaluate power requirements. Select MOBL™ SRAMs for standby current below 3 µA in battery-powered designs. Standard SRAMs suit always-on powered applications.
  • Step 5: Confirm qualification requirements. For defense or aerospace applications requiring MIL-PRF-38535 compliance, choose QML-certified asynchronous SRAM ICs. For commercial and industrial applications, all devices are RoHS compliant and available in industry-standard packages.

Infineon Static RAM: 256 KB to 144 MB with QML certification

Infineon offers the industry's broadest portfolio of low-power and high-speed SRAM memory, covering densities from 256 KB to 144 MB across asynchronous and synchronous architectures. The asynchronous SRAM range spans MOBL™ micropower devices with 3 µA standby current through fast devices with 8 ns access times. The synchronous range includes DDR sync SRAMs at up to 550 MHz, QDR™ sync SRAMs at up to 1066 MHz and synchronous SRAM with on-chip ECC delivering a soft error rate below 0.1 FIT/Mbit.

All devices are RoHS compliant. Select asynchronous SRAM ICs are QML certified for defense and aerospace applications. Infineon provides stable supply and long-term product support across the full SRAM portfolio, reducing obsolescence risk for programs with 10-year or longer lifecycles.

Read more about SRAM longevity here

SRAMs evaluation kits, SPICE models, and application notes

Datasheets and parametric tables – Full electrical characterization, timing diagrams, and package mechanical drawings are available per device on the relevant product page, supporting system-level timing analysis and PCB layout design.

SPICE Models - SPICE simulation models are available for key SRAM IC variants, enabling signal integrity and timing margin estimation in circuit simulation before hardware build.

Application notes – Design-in documentation covers asynchronous SRAM bus interface design, synchronous SRAM clock routing guidelines, on-chip EEC implementation, and MOBL™ battery-backup circuit design.

Parametric selection tool – Use the Infineon parametric selector to filter the SRAM portfolio by density, access time, interface type, supply voltage, package, and qualification level to identify the right static RAM for your application.

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