Gate driver ICs for GaN HEMTs

EiceDRIVER™ gate driver ICs with perfect fit for GaN HEMTs

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EiceDRIVER™ gate driver ICs designed for GaN HEMT technology

GaN HEMTs represents a key technology for modern power electronics systems, providing high efficiency and power density. Infineon’s CoolGaN™ HEMT families and EiceDRIVER™ gate driver ICs are designed to provide the best possible performance in GaN-based systems, minimizing R&D effort and cost.

Infineon offers a broad range of EiceDRIVER™ gate driver ICs, optimized for driving GaN GIT (gate injection transistor) and SG (Schottky gate) HEMTs.

EiceDRIVER™ gate driver IC product portfolio

An innovative differential gate drive concept has been implemented in tailor-made EiceDRIVER™ 1EDx56x3 gate driver ICs to address the specifics of Infineon's CoolGaN™ GIT technology concept.

Meanwhile, the 1EDN71x6Gx product family's optimized for driving GaN Schottky gate (SG) HEMTs. This gate driver's  key features enable a high-performance system design with fast-switching transistors.

Nevertheless, in many applications, standard gate driver ICs can also be employed when coupled to an RRC circuit to generate both the required small steady-state current and the turn-on/turn-off peak currents. Dual-channel drivers of the EiceDRIVER™ silicon-on-insulator (SOI) gate driver ICs (e.g. 2ED21064S06J or  2ED21814S06J) or  EiceDRIVER™ 2EDxx259  family feature dead-time control and shoot-through protection to ensure safe operation in half-bridge topologies using a single IC.

To summarize,  Infineon the EiceDRIVER™ families are the best choices to match with Infineon’s CoolGaN™ GIT HEMTs and other GaN HEMTs technologies (e.g., Schottky gate, Cascode) to achieve an optimum combination of efficiency, power density, and robustness in high-performance power conversion applications.

Optimized for highest efficiency and power density designs

High efficiency and high power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

In addition to its high-performance CoolGaN™ HEMT families, Infineon Technologies offers a broad range of EiceDRIVER™ gate driver ICs optimized for driving CoolGaN™ SG HEMTs and CoolGaN™ GIT HEMTs, strategically designed to provide the best-in-class system solutions for target applications.

Gate driver IC designed for best CoolGaN™ SG and GIT HEMT

One key difference between these two structures is the gate metallization: The GIT HEMT uses an ohmic gate contact, and the SG HEMT uses a Schottky gate contact.

The GIT gate is non-insulated and thereby very rugged against overvoltage, due to the self-clamping nature of the equivalent diode between the gate and channel. The Schottky gate is “semi-isolated” by the back-to-back diodes, preventing significant current flow to emulate a conventional MOSFET gate.

EiceDRIVER™ gate driver ICs designed for GaN HEMT technology

GaN HEMTs represents a key technology for modern power electronics systems, providing high efficiency and power density. Infineon’s CoolGaN™ HEMT families and EiceDRIVER™ gate driver ICs are designed to provide the best possible performance in GaN-based systems, minimizing R&D effort and cost.

Infineon offers a broad range of EiceDRIVER™ gate driver ICs, optimized for driving GaN GIT (gate injection transistor) and SG (Schottky gate) HEMTs.

EiceDRIVER™ gate driver IC product portfolio

An innovative differential gate drive concept has been implemented in tailor-made EiceDRIVER™ 1EDx56x3 gate driver ICs to address the specifics of Infineon's CoolGaN™ GIT technology concept.

Meanwhile, the 1EDN71x6Gx product family's optimized for driving GaN Schottky gate (SG) HEMTs. This gate driver's  key features enable a high-performance system design with fast-switching transistors.

Nevertheless, in many applications, standard gate driver ICs can also be employed when coupled to an RRC circuit to generate both the required small steady-state current and the turn-on/turn-off peak currents. Dual-channel drivers of the EiceDRIVER™ silicon-on-insulator (SOI) gate driver ICs (e.g. 2ED21064S06J or  2ED21814S06J) or  EiceDRIVER™ 2EDxx259  family feature dead-time control and shoot-through protection to ensure safe operation in half-bridge topologies using a single IC.

To summarize,  Infineon the EiceDRIVER™ families are the best choices to match with Infineon’s CoolGaN™ GIT HEMTs and other GaN HEMTs technologies (e.g., Schottky gate, Cascode) to achieve an optimum combination of efficiency, power density, and robustness in high-performance power conversion applications.

Optimized for highest efficiency and power density designs

High efficiency and high power density are key requirements for modern power electronics systems, which are enabled by state-of-the-art GaN HEMTs. The right gate driver IC can help designers achieve the best performance in their GaN-based systems, while simultaneously minimizing R&D efforts and associated costs.

In addition to its high-performance CoolGaN™ HEMT families, Infineon Technologies offers a broad range of EiceDRIVER™ gate driver ICs optimized for driving CoolGaN™ SG HEMTs and CoolGaN™ GIT HEMTs, strategically designed to provide the best-in-class system solutions for target applications.

Gate driver IC designed for best CoolGaN™ SG and GIT HEMT

One key difference between these two structures is the gate metallization: The GIT HEMT uses an ohmic gate contact, and the SG HEMT uses a Schottky gate contact.

The GIT gate is non-insulated and thereby very rugged against overvoltage, due to the self-clamping nature of the equivalent diode between the gate and channel. The Schottky gate is “semi-isolated” by the back-to-back diodes, preventing significant current flow to emulate a conventional MOSFET gate.

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