OptiMOS™ and StrongIRFET™ packages

Latest space-saving and high-performance packages for applications such as power supplies, battery-powered applications, inverters, and computing.

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Package innovation with Source-Down PQFN package

Infineon presents an innovative and improved PQFN package with Source-Down technology. With this new package, the silicon is flipped upside down inside the component. This leads to the source potential connected to the PCB over the thermal pad instead of the drain potential.

The OptiMOS™ power MOSFET 3.3x3.3 mm² Source-Down package is now available in 25 V-150 V in bottom-side cooling (BSC) and in dual-side cooling (DSC).

Source-Down PQFN package
The TOLx package family: Infineon's MOSFETs in TOLL, TOLG, and TOLT

Infineon's family of TOLx MOSFET packages are available to address three different design requirements. The TOLL (TO-Leadless) package is optimized for high-power applications. The TOLG (TO-Leaded with gullwing) is optimized for better thermal cycling on board (TCoB) robustness. The TOLT (TO-Leaded top-side cooling) is optimized for superior thermal performance. 

OptiMOS™ TOLx package family
DirectFET™ packages: Get more power and better thermal performance

Infineon offers innovative packages such as the DirectFET™ package. The DirectFET™ is designed for high-frequency applications by offering the lowest parasitic resistance. DirectFET™ has a uniquely simple construction that provides breakthroughs in die-free package resistance, parasitic package inductance, and heat dissipation capabilities.

This package is available in three different sizes: small, medium, and large. 

DirectFET™
OptiMOS™ and StrongIRFET™ power MOSFETs from 20-300 V

Infineon’s semiconductors are designed to bring greater efficiency, power density, and cost-effectiveness. The full range of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch mode power supplies (SMPS), battery-powered applications, motor control, drives, inverters, and computing.

Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and figure of merit (FOM).

OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultra-low RDS(on), as well as low charge for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.

OptiMOS™ and StrongIRFET™ Selection Guide

Package innovation with Source-Down PQFN package

Infineon presents an innovative and improved PQFN package with Source-Down technology. With this new package, the silicon is flipped upside down inside the component. This leads to the source potential connected to the PCB over the thermal pad instead of the drain potential.

The OptiMOS™ power MOSFET 3.3x3.3 mm² Source-Down package is now available in 25 V-150 V in bottom-side cooling (BSC) and in dual-side cooling (DSC).

Source-Down PQFN package

The TOLx package family: Infineon's MOSFETs in TOLL, TOLG, and TOLT

Infineon's family of TOLx MOSFET packages are available to address three different design requirements. The TOLL (TO-Leadless) package is optimized for high-power applications. The TOLG (TO-Leaded with gullwing) is optimized for better thermal cycling on board (TCoB) robustness. The TOLT (TO-Leaded top-side cooling) is optimized for superior thermal performance. 

OptiMOS™ TOLx package family

DirectFET™ packages: Get more power and better thermal performance

Infineon offers innovative packages such as the DirectFET™ package. The DirectFET™ is designed for high-frequency applications by offering the lowest parasitic resistance. DirectFET™ has a uniquely simple construction that provides breakthroughs in die-free package resistance, parasitic package inductance, and heat dissipation capabilities.

This package is available in three different sizes: small, medium, and large. 

DirectFET™

OptiMOS™ and StrongIRFET™ power MOSFETs from 20-300 V

Infineon’s semiconductors are designed to bring greater efficiency, power density, and cost-effectiveness. The full range of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch mode power supplies (SMPS), battery-powered applications, motor control, drives, inverters, and computing.

Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and figure of merit (FOM).

OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultra-low RDS(on), as well as low charge for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.

OptiMOS™ and StrongIRFET™ Selection Guide

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