GaN bare dies

CoolGaN™ Bare Dies 40 V - 700 V

Overview

Infineon provides GaN bare dies for 40V - 200V and 650V - 700V ranges, tailored for consumer and industrial applications. Available as transistors, bidirectional switches, and advanced devices with current sensing, they enable flexible, high-performance power solutions. Infineon also offers complementing additional services related to our die portfolio.

Key Features

  • Consumer & industrial grade
  • Medium-power range: 40 V - 200 V
  • High-power range: 650 V - 700 V
  • Suitable for various applications
  • Extensive portfolio
  • Ultra-fast switching
  • Multiple chip sizes
  • Extra services

About

Infineon's medium-voltage GaN bare die offering

Infineon CoolGaN™ Bare Die offers a wide range of solutions with industry-leading RDS(on) in minimal footprint using Schottky Gate structure. CoolGaN™ Bare Die solutions are available for high-power industrial and consumer applications, including bidirectional switches, transistors, and more.

Key features:

* FET type: E-mode / GaN-on-Si

* Suitable for die bond: soldering

* Back-side metallization: N/A

* Front-side metallization: AlCu

* Packaging: blue film 

Infineon's high-voltage GaN bare die offering

Infineon's CoolGaN™ Bare Die products combine industry-leading RDS(on) with superior switching frequency, delivering exceptional performance for industrial and consumer applications, including bidirectional switches, transistors, and more.

Key features: 

* FET type: E-mode / GaN-on-Si

* Suitable for die bond: soldering 

* Back-side metallization: Ni/Ag

* Front-side metallization: Cu

* Packaging: blue film 

Extra services

For more information on using CoolGaN™ Bare Die in applications beyond industrial and consumer use, please contact us.

Interested in custom die designs? Contact our experts to discuss your requirements.

Contact us

Infineon's medium-voltage GaN bare die offering

Infineon CoolGaN™ Bare Die offers a wide range of solutions with industry-leading RDS(on) in minimal footprint using Schottky Gate structure. CoolGaN™ Bare Die solutions are available for high-power industrial and consumer applications, including bidirectional switches, transistors, and more.

Key features:

* FET type: E-mode / GaN-on-Si

* Suitable for die bond: soldering

* Back-side metallization: N/A

* Front-side metallization: AlCu

* Packaging: blue film 

Infineon's high-voltage GaN bare die offering

Infineon's CoolGaN™ Bare Die products combine industry-leading RDS(on) with superior switching frequency, delivering exceptional performance for industrial and consumer applications, including bidirectional switches, transistors, and more.

Key features: 

* FET type: E-mode / GaN-on-Si

* Suitable for die bond: soldering 

* Back-side metallization: Ni/Ag

* Front-side metallization: Cu

* Packaging: blue film 

Extra services

For more information on using CoolGaN™ Bare Die in applications beyond industrial and consumer use, please contact us.

Interested in custom die designs? Contact our experts to discuss your requirements.

Contact us

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }