Silicon Carbide Bidirectional Switches

Overview

Built on the rugged CoolSiC™ G2 technology, the CoolSiC™ bidirectrional switch (BDS) integrates two SiC power switches in a dual‑die common‑drain architecture within a top‑side‑cooled Q‑DPAK package, simplifying system design and enabling next‑generation topologies. Designed for modern power grids, AI power shelf, solar inverter and energy systems, CSI drive, it delivers high reliability, efficiency, and low lifetime TCO.

Key Features

  • Two dies in back to back
  • Overload capability 200°C for 100 h
  • Ready for native liquid cooling
  • 2 μs short circuit ruggedness
  • 100% avalanche tested
  • 840 Vbr maximum
  • 2.3 mm package height

Products

About

The 750 V CoolSiC™ G2 bidirectional switch combines two SiC power switches in a dual-die common-drain architecture within one top-side-cooled Q-DPAK package. It supports active current conduction and voltage blocking in both directions, simplifying designs that would otherwise require two discrete back-to-back switches. The integrated approach reduces component count and PCB footprint while helping minimize parasitic inductance for efficient, reliable high-frequency switching. CoolSiC™ BDS is suited to next-generation power-conversion topologies such as Vienna rectifiers and matrix converters, with target applications including HVDC AI power supplies, battery and capacitor backup units, solar and energy storage systems, bidirectional EV charging, CSI drives, HVAC systems, and solid-state circuit breakers.

This application note describes Infineon’s new heat-spreader dual small-outline package (HDSOP) family, which consists of TSC surface-mount devices (SMDs) designed for HV applications.

• Explains the advantages of TSC

• Discusses different assembly methods and thermal stacks and their influence on thermal performance

• Addresses the different manufacturing challenges a hardware designer must consider when using TSC

The new CoolSiC™ G2 Bidirectional Switch (BDS) Full-Bridge (FB) evaluation board showcases Infineon’s latest 750 V CoolSiC™ G2-based Silicon Carbide (SiC) BDS technology. Designed for demanding high-voltage applications, the board delivers the robustness, thermal performance, and efficiency required in modern power conversion systems.

The 750 V CoolSiC™ G2 bidirectional switch combines two SiC power switches in a dual-die common-drain architecture within one top-side-cooled Q-DPAK package. It supports active current conduction and voltage blocking in both directions, simplifying designs that would otherwise require two discrete back-to-back switches. The integrated approach reduces component count and PCB footprint while helping minimize parasitic inductance for efficient, reliable high-frequency switching. CoolSiC™ BDS is suited to next-generation power-conversion topologies such as Vienna rectifiers and matrix converters, with target applications including HVDC AI power supplies, battery and capacitor backup units, solar and energy storage systems, bidirectional EV charging, CSI drives, HVAC systems, and solid-state circuit breakers.

This application note describes Infineon’s new heat-spreader dual small-outline package (HDSOP) family, which consists of TSC surface-mount devices (SMDs) designed for HV applications.

• Explains the advantages of TSC

• Discusses different assembly methods and thermal stacks and their influence on thermal performance

• Addresses the different manufacturing challenges a hardware designer must consider when using TSC

The new CoolSiC™ G2 Bidirectional Switch (BDS) Full-Bridge (FB) evaluation board showcases Infineon’s latest 750 V CoolSiC™ G2-based Silicon Carbide (SiC) BDS technology. Designed for demanding high-voltage applications, the board delivers the robustness, thermal performance, and efficiency required in modern power conversion systems.

Documents

Design resources

Developer community