Low noise amplifiers (LNAs)

LNA MMICs for IoT, Wi-Fi, satellite, cellular, and GNSS applications with high gain

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Infineon MMIC LNAs

Infineon LNAs provide fast and precise navigation, supporting smooth, high-quality streaming and high data rates under all reception conditions. These highly integrated LNA MMICs come in smallest packages with ESD protection and low power consumption. They are ideal for battery-operated devices like wearables, Wi-Fi devices, and smartphones, and IoT applications such as smart home appliances. They are even suited to scooters, drones, or smart factory devices. 

Furthermore, the innovative silicon germanium (SiGe) technology delivers lower noise than silicon alternatives while providing performance comparable to that of high-priced GaAs counterparts.

4G/5G, Wi-Fi, IoT, satellite, connectivity, and GNSS applications

Infineon offers a range of LNA ICs for 4G/5G, Wi-Fi, and UWB applications that allow easy implementation into RF design. Infineon LNAs are used in many customized solutions as well as referenced by many chipset vendors. Additionally, Infineon offers a range of GPS/GLONASS/COMPASS (GNSS) LNAs that are ideal for portable devices such as smart phones and tablets. These ICs offer best-in-class noise figures, linearity, and form factor.

Infineon’s extensive portfolio of LNAs offers high gain and an ultra-low noise figure, which significantly improve frontend losses and increases the data rate. The product range include gain step LNAs and multi-state LNAs to improve 4G/5G system sensitivity.

Improved SNR

The reduced gap between Gamma Opt point (location of optimum source impedance for minimum noise figure) at 5 - 6 GHz and 50 Ω in Infineon LNAs boost the RF receiver sensitivity. This allows input matching without any external matching components.

Benefits include a low noise figure (less than 1 dB at 5 - 6 GHz at application level and 0.75 dB NFmin at transistor level), best power gain (around 15 dB) at application level, and 22 dB maximum power gain at application level, reduced BOM, smaller PCB footprint, and best linearity at lower supply voltages. Robustness against ESD and high input power thanks to integrated ESD protection at the input and output.

Infineon MMIC LNAs

Infineon LNAs provide fast and precise navigation, supporting smooth, high-quality streaming and high data rates under all reception conditions. These highly integrated LNA MMICs come in smallest packages with ESD protection and low power consumption. They are ideal for battery-operated devices like wearables, Wi-Fi devices, and smartphones, and IoT applications such as smart home appliances. They are even suited to scooters, drones, or smart factory devices. 

Furthermore, the innovative silicon germanium (SiGe) technology delivers lower noise than silicon alternatives while providing performance comparable to that of high-priced GaAs counterparts.

4G/5G, Wi-Fi, IoT, satellite, connectivity, and GNSS applications

Infineon offers a range of LNA ICs for 4G/5G, Wi-Fi, and UWB applications that allow easy implementation into RF design. Infineon LNAs are used in many customized solutions as well as referenced by many chipset vendors. Additionally, Infineon offers a range of GPS/GLONASS/COMPASS (GNSS) LNAs that are ideal for portable devices such as smart phones and tablets. These ICs offer best-in-class noise figures, linearity, and form factor.

Infineon’s extensive portfolio of LNAs offers high gain and an ultra-low noise figure, which significantly improve frontend losses and increases the data rate. The product range include gain step LNAs and multi-state LNAs to improve 4G/5G system sensitivity.

Improved SNR

The reduced gap between Gamma Opt point (location of optimum source impedance for minimum noise figure) at 5 - 6 GHz and 50 Ω in Infineon LNAs boost the RF receiver sensitivity. This allows input matching without any external matching components.

Benefits include a low noise figure (less than 1 dB at 5 - 6 GHz at application level and 0.75 dB NFmin at transistor level), best power gain (around 15 dB) at application level, and 22 dB maximum power gain at application level, reduced BOM, smaller PCB footprint, and best linearity at lower supply voltages. Robustness against ESD and high input power thanks to integrated ESD protection at the input and output.

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