Diode bare dies

Infineon's unique Fast Recovery Diode technology

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Overview

Our ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode ideally suited for consumer & industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.

Key Features

  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
  • Field-stop technology

Products

About

About Diode Bare Dies

Diode Bare Dies are available in different variants. Referring to the technology, the products can be divided into different categories, including for example Emitter Controlled Diode 4 Medium Power, Emitter Controlled Diode High Efficiency or Emitter Controlled Diode 3. Furthermore, the diodes cover a VDS max range from 600 V to 1700 V.  

Target Applications

Emitter Controlled-Diodes are ideally suited for consumer & industry applications as they lower the turn-on losses of the IGBT with soft recovery.

More about IGBTs

About Diode Bare Dies

Diode Bare Dies are available in different variants. Referring to the technology, the products can be divided into different categories, including for example Emitter Controlled Diode 4 Medium Power, Emitter Controlled Diode High Efficiency or Emitter Controlled Diode 3. Furthermore, the diodes cover a VDS max range from 600 V to 1700 V.  

Target Applications

Emitter Controlled-Diodes are ideally suited for consumer & industry applications as they lower the turn-on losses of the IGBT with soft recovery.

More about IGBTs

Documents

Documents

Design resources

Developer Community

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