Half-bridge drivers

Gate driver ICs to control power devices like MOSFETs or IGBTs in half-bridge topology

Overview

Infineon's gate driver ICs are the expert’s choice. We offer half-bridge gate drivers with two interlocked channels. Infineon offers half-bridge gate driver ICs with advanced Infineon silicon-on-insulator (SOI) technology or our industry-proven p-n junction-isolation (JI) technology. Automotive-qualified half-bridge gate driver ICs are also available.

Key Features

  • Voltages: 1200 V, 650 V, <200 V
  • Advanced SOI technology options
  • Market-proven JI technology options
  • Two interlocked channels
  • High power efficiency
  • Fast & reliable switching
  • Reliable and rugged
  • Protection under abnormal operation
  • low-cost bootstrap power supply
  • dV/dt immune
  • Several pin-out and package options

Products

About

Introduction to EiceDRIVER™ gate driver ICs

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, <200 V, 500-650 V, and 1200 V level shift gate drivers.

Infineon EiceDRIVER(TM) gate driver IC portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more
EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Introduction to EiceDRIVER™ gate driver ICs

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualified gate drivers, <200 V, 500-650 V, and 1200 V level shift gate drivers.

Infineon EiceDRIVER(TM) gate driver IC portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more

EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Design resources

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