85 V-300 V N-channel power MOSFETs

OptiMOS™ and StrongIRFET™ N-channel power MOSFETs 85 V-300 V

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Overview

Infineon's portfolio of 85 V-300 V N-channel MOSFETs is offered with OptiMOS™ and StrongIRFET™ technologies and are suitable for low-, medium-, and high-power applications. With ultra-low reverse recovery charge (Qrr) and excellent on-state resistance (RDSon) figures of merit (FOM) that allow for fast and hard switching, Infineon’s range of 85 V-300 V N-channel MOSFET leads to an overall system cost reduction.

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With an extensive product portfolio of N-channel MOSFETs in the 85 V-300 V range, Infineon has your needs covered for both industrial and automotive applications. The portfolio of 85 V-300 V N-channel MOSFETs is ideal for applications such as UPS, solar-powered applications, forklifts, and light electric vehicles.

To address both high and low switching frequency requirements, Infineon has designed a broad line of 100 V MOSFETs that utilize OptiMOS™ and StrongIRFET™ silicon die technologies. OptiMOS™ 100 V products are optimized for high-performance applications that require broad switching frequencies while StrongIRFET™ products are optimized for switching frequencies below 100 kHz. The robust design offers ruggedness and increased current carrying capabilities for industrial applications.

OptiMOS™ 6 power MOSFET 100 V is Infineon’s latest MOSFET technology featuring improved figures of merit and increased efficiency in high switching frequency applications. Infineon’s OptiMOS™ 6 family is targeted for applications such as SMPS as well as solar, power tools, and battery management systems. 

For wireless charging, adapters, and telecom applications, the logic-level range of products offers high power density and switching frequencies. Thanks to the devices’ lower gate charge (Qg), switching losses can be reduced without compromising on conduction losses. The PQFN 2x2 package offers an extremely small form factor and is ideal for space-critical applications.

OptiMOS™ Linear FETs are available in 100 V, 150 V, and 200 V N-channel MOSFET voltage classes and are designed to reduce conduction losses, be set up faster, and have shorter intermissions. The product range uses a revolutionary approach to offer state-of-the-art on-state resistance (RDS(on)) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

The product family is designed to limit high inrush currents, thus preventing damage at the load, making it an ideal choice for hot-swap and e-fuse (electronic fuse) applications, such as those commonly found in telecom and battery management systems.

Infineon provides a large product portfolio of N-channel MOSFETs in the 85 V-300 V range that are automotive-qualified. To find out more, visit our automotive MOSFET page.

With an extensive product portfolio of N-channel MOSFETs in the 85 V-300 V range, Infineon has your needs covered for both industrial and automotive applications. The portfolio of 85 V-300 V N-channel MOSFETs is ideal for applications such as UPS, solar-powered applications, forklifts, and light electric vehicles.

To address both high and low switching frequency requirements, Infineon has designed a broad line of 100 V MOSFETs that utilize OptiMOS™ and StrongIRFET™ silicon die technologies. OptiMOS™ 100 V products are optimized for high-performance applications that require broad switching frequencies while StrongIRFET™ products are optimized for switching frequencies below 100 kHz. The robust design offers ruggedness and increased current carrying capabilities for industrial applications.

OptiMOS™ 6 power MOSFET 100 V is Infineon’s latest MOSFET technology featuring improved figures of merit and increased efficiency in high switching frequency applications. Infineon’s OptiMOS™ 6 family is targeted for applications such as SMPS as well as solar, power tools, and battery management systems. 

For wireless charging, adapters, and telecom applications, the logic-level range of products offers high power density and switching frequencies. Thanks to the devices’ lower gate charge (Qg), switching losses can be reduced without compromising on conduction losses. The PQFN 2x2 package offers an extremely small form factor and is ideal for space-critical applications.

OptiMOS™ Linear FETs are available in 100 V, 150 V, and 200 V N-channel MOSFET voltage classes and are designed to reduce conduction losses, be set up faster, and have shorter intermissions. The product range uses a revolutionary approach to offer state-of-the-art on-state resistance (RDS(on)) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

The product family is designed to limit high inrush currents, thus preventing damage at the load, making it an ideal choice for hot-swap and e-fuse (electronic fuse) applications, such as those commonly found in telecom and battery management systems.

Infineon provides a large product portfolio of N-channel MOSFETs in the 85 V-300 V range that are automotive-qualified. To find out more, visit our automotive MOSFET page.

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