85 V-300 V N-channel power MOSFETs

OptiMOS™ and StrongIRFET™ N-channel power MOSFETs 85 V-300 V

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Overview

Infineon's portfolio of 85 V-300 V N-channel MOSFETs is offered with OptiMOS™ and StrongIRFET™ technologies and are suitable for low-, medium-, and high-power applications. With ultra-low reverse recovery charge (Qrr) and excellent on-state resistance (RDSon) figures of merit (FOM) that allow for fast and hard switching, Infineon’s range of 85 V-300 V N-channel MOSFET leads to an overall system cost reduction.

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With an extensive product portfolio of N-channel MOSFETs in the 85 V-300 V range, Infineon has your needs covered for both industrial and automotive applications. The portfolio of 85 V-300 V N-channel MOSFETs is ideal for applications such as UPS, solar-powered applications, forklifts, and light electric vehicles.

Infineon's OptiMOS™ 5 industrial power MOSFET devices in 100 V are designed for synchronous rectification in telecom and server power supply applications; they are also the ideal choice for other applications such as solar, low-voltage drives, and laptop adapters.

OptiMOS™ 6 100 V brings together the benefits of exceptionally low on-state resistance and superior switching performance. These features make OptiMOS™ 6 the best fit for high switching frequency applications, supporting the trend toward significantly higher efficiency while enabling design for higher power densities.

OptiMOS™ Linear FET helps you avoid the compromise between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

Infineon's OptiMOS™ 6 120 V power MOSFET family is suitable for both hard- and soft-switching applications, at high and low switching frequencies, and is available in both Normal and Logic levels. These can be used in various applications such as industrial power supplies, solar, power chargers, low-voltage drives, and power tools.

OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEV's, e-forklifts, power and gardening tools, as well as UPS, which predominantly use 72 V and 84 V batteries. This product family effectively bridges the gap between 120 V and 150 V MOSFETs and provides high performance with the lowest Rds(on) enabling efficient power handling and reduced power dissipation.

The new OptiMOS™ 6 150 V technology was designed to fulfill the requirements of various applications, from telecom and server SMPS to eForklifts and LEVs, as well as solar optimizers and high-power USB chargers. With industry’s lowest RDS(on), improved switching performance and excellent EMI behavior, OptiMOS™ 6 150 V enables unparalleled efficiency, power density and reliability with significant improvements versus its predecessor OptiMOS™ 5.

This new listed product families are designed to offer perfect replacement parts for the predecessors in OptiMOS™ 5 120V and OptiMOS™ 5 150V.

 

Infineon’s latest OptiMOS™ 6 MOSFET technology at 200 V utilizes a proprietary novel needle trench technology that enables higher power density, efficiency, and ruggedness. Compared to the latest OptiMOS™ 3 technology enables significant performance benefits.

With an extensive product portfolio of N-channel MOSFETs in the 85 V-300 V range, Infineon has your needs covered for both industrial and automotive applications. The portfolio of 85 V-300 V N-channel MOSFETs is ideal for applications such as UPS, solar-powered applications, forklifts, and light electric vehicles.

Infineon's OptiMOS™ 5 industrial power MOSFET devices in 100 V are designed for synchronous rectification in telecom and server power supply applications; they are also the ideal choice for other applications such as solar, low-voltage drives, and laptop adapters.

OptiMOS™ 6 100 V brings together the benefits of exceptionally low on-state resistance and superior switching performance. These features make OptiMOS™ 6 the best fit for high switching frequency applications, supporting the trend toward significantly higher efficiency while enabling design for higher power densities.

OptiMOS™ Linear FET helps you avoid the compromise between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

StrongIRFET™ 2 offers broad availability and excellent price/performance ratio making these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for low and high switching frequencies, the family supports a broad range of applications enabling design flexibility. 

Infineon's OptiMOS™ 6 120 V power MOSFET family is suitable for both hard- and soft-switching applications, at high and low switching frequencies, and is available in both Normal and Logic levels. These can be used in various applications such as industrial power supplies, solar, power chargers, low-voltage drives, and power tools.

OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEV's, e-forklifts, power and gardening tools, as well as UPS, which predominantly use 72 V and 84 V batteries. This product family effectively bridges the gap between 120 V and 150 V MOSFETs and provides high performance with the lowest Rds(on) enabling efficient power handling and reduced power dissipation.

The new OptiMOS™ 6 150 V technology was designed to fulfill the requirements of various applications, from telecom and server SMPS to eForklifts and LEVs, as well as solar optimizers and high-power USB chargers. With industry’s lowest RDS(on), improved switching performance and excellent EMI behavior, OptiMOS™ 6 150 V enables unparalleled efficiency, power density and reliability with significant improvements versus its predecessor OptiMOS™ 5.

This new listed product families are designed to offer perfect replacement parts for the predecessors in OptiMOS™ 5 120V and OptiMOS™ 5 150V.

 

Infineon’s latest OptiMOS™ 6 MOSFET technology at 200 V utilizes a proprietary novel needle trench technology that enables higher power density, efficiency, and ruggedness. Compared to the latest OptiMOS™ 3 technology enables significant performance benefits.

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