CoolSiC™ Schottky diodes 1200 V G5

Generation 5 enables a new level of efficiency and reliability

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Overview

Implementation of highly efficient, compact, and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200 V voltages. Alternative designs using 600 V/650 V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.

Key Features

  • Best-in-class forward voltage
  • No reverse recovery charge
  • Up to 40 A rated diode
  • Excellent thermal performance

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CoolSiC™ Schottky diode 1200 V combined with a Si HighSpeed 3 IGBT

It delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, improved thermal performance now reduces the junction temperature by 15% compared to a silicon-based solution, increasing the system reliability as well as the possibility to increase output power in a given form factor.

The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, generation 5 diodes come with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price-to-performance ratio. Generation 5 is targeted for use in solar inverters, UPS systems, motor drives, and 3-phase SMPS.

Key features and benefits of CoolSiC™ Schottky diode 1200 V G5

CoolSiC™ Schottky diode 1200 V G5 incorporates important key features, e.g., best-in-class forward voltage, mild positive temperature dependency of VF, best-in-class surge current capability, and excellent thermal performance rated up to 40 A.

Key benefits are, among other things, highest system efficiency, improved system efficiency at low switching frequencies, increased power density at high switching frequencies, higher system reliability, and reduced EMI.    

1200 V SiC Schottky diode in D2PAK real2pin

Trends in compact system designs call for high efficiencies while using a small device package. CoolSiC™ Schottky diode generation 5 1200 V is now available in D2PAK real2pin package with current ratings from 2 A to 20 A. 

Combined with a Si IGBT or a super-junction MOSFET, for example, in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottky diodes – CoolSiC™ G5 products come with best-in-class forward voltage (VF), the least increase of VF with temperature, and the highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive price.

CoolSiC™ Schottky diode 1200 V combined with a Si HighSpeed 3 IGBT

It delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, improved thermal performance now reduces the junction temperature by 15% compared to a silicon-based solution, increasing the system reliability as well as the possibility to increase output power in a given form factor.

The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, generation 5 diodes come with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price-to-performance ratio. Generation 5 is targeted for use in solar inverters, UPS systems, motor drives, and 3-phase SMPS.

Key features and benefits of CoolSiC™ Schottky diode 1200 V G5

CoolSiC™ Schottky diode 1200 V G5 incorporates important key features, e.g., best-in-class forward voltage, mild positive temperature dependency of VF, best-in-class surge current capability, and excellent thermal performance rated up to 40 A.

Key benefits are, among other things, highest system efficiency, improved system efficiency at low switching frequencies, increased power density at high switching frequencies, higher system reliability, and reduced EMI.    

1200 V SiC Schottky diode in D2PAK real2pin

Trends in compact system designs call for high efficiencies while using a small device package. CoolSiC™ Schottky diode generation 5 1200 V is now available in D2PAK real2pin package with current ratings from 2 A to 20 A. 

Combined with a Si IGBT or a super-junction MOSFET, for example, in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottky diodes – CoolSiC™ G5 products come with best-in-class forward voltage (VF), the least increase of VF with temperature, and the highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive price.

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