Rad tolerant MOSFETs

From 60 V to 150 V in plastic encapsulated packaging

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Overview

Infineon HiRel NewSpace power MOSFETs are radiation tolerant by design and ideal for shorter duration, low radiation environment missions, such as in low Earth orbit (LEO). The rad tolerant power FETs are based on Infineon's enhanced commercial CoolMOS™ technology and mature high-volume production processes.

Key Features

  • Plastic encapsulated packaging
  • AEC-Q101 qualified
  • Total dose 30kRads(Si)
  • Voltage classes: 60 V and 150 V VDS(max)
  • RDS(on)@ 10 V max from 15 mΩ to 60 mΩ
  • Surface mount and thru hole packages

Products

About

Rad-tolerant N-channel power MOSFETs

Infineon's award-winning radiation tolerant N-channel power MOSFETs are designed for 2-5 year LEO missions and constellations. These devices are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg.

They can withstand 30 krad(Si) of Total Ionizing Dose and offer fast switching capabilities with CoolMOS™ super-junction technology.

Key features:

  • 60 V and 150 V options supporting 28 V and 54 V bus voltages
  • RDS(on) values from 15 mΩ to 60 mΩ
  • Available in TO-263 and TO-247 packages with matte tin leads
  • Qualified to AEC-Q101 standard with -40°C to +125°C operating temperature
  • Ideal for LEO Satellite Applications

Infineon's radiation tolerant N-channel power MOSFETs are perfect for fast switching applications in LEO satellites, offering reliable and efficient power conversion.

Rad-tolerant P-channel power MOSFET

Radiation Tolerant P-Channel Power MOSFET for LEO Missions

Infineon's radiation tolerant P-channel power MOSFET, BUP06CP038F-01, is designed for 2-5 year LEO missions and constellations.

This SEE-tolerant device withstands 30 krad(Si) of Total Ionizing Dose and offers fast switching capabilities.

Key Features

  • -60 V voltage class and 38 mΩ RDS(on) value
  • Available in TO-252-3 package with matte tin leads
  • Qualified for space applications according to AEC-Q101 tests
  • Junction temperature range: -55°C to +175°C
  • Ideal for Fast Switching Applications

Infineon's radiation tolerant P-channel power MOSFET is perfect for fast switching applications in LEO satellites, offering reliable and efficient power conversion.

Key Applications for Radiation Tolerant Power Solutions

Infineon's NewSpace power solutions are ideal for a range of critical applications, including:

  • Power Conditioning Units (PCUs):
    Our radiation tolerant power MOSFETs enable efficient and reliable power conditioning, ensuring that spacecraft systems receive the clean power they need to operate effectively.

  • Power Distribution Units (PDUs):
    With their high reliability and radiation tolerance, our power MOSFETs are perfect for power distribution units, which require efficient and fault-tolerant power distribution to multiple spacecraft systems.

  • DC-DC Converters:
    Our power solutions are also well-suited for DC-DC converters, which play a critical role in converting power from one voltage level to another, while minimizing energy losses and ensuring reliable operation.

By leveraging Infineon's radiation tolerant power MOSFETs, spacecraft designers and engineers can create more efficient, reliable, and longer-lasting power systems for their LEO missions and constellations.

Rad-tolerant N-channel power MOSFETs

Infineon's award-winning radiation tolerant N-channel power MOSFETs are designed for 2-5 year LEO missions and constellations. These devices are single event effect (SEE) tolerant with a LET of 46 MeV∙cm²/mg.

They can withstand 30 krad(Si) of Total Ionizing Dose and offer fast switching capabilities with CoolMOS™ super-junction technology.

Key features:

  • 60 V and 150 V options supporting 28 V and 54 V bus voltages
  • RDS(on) values from 15 mΩ to 60 mΩ
  • Available in TO-263 and TO-247 packages with matte tin leads
  • Qualified to AEC-Q101 standard with -40°C to +125°C operating temperature
  • Ideal for LEO Satellite Applications

Infineon's radiation tolerant N-channel power MOSFETs are perfect for fast switching applications in LEO satellites, offering reliable and efficient power conversion.

Rad-tolerant P-channel power MOSFET

Radiation Tolerant P-Channel Power MOSFET for LEO Missions

Infineon's radiation tolerant P-channel power MOSFET, BUP06CP038F-01, is designed for 2-5 year LEO missions and constellations.

This SEE-tolerant device withstands 30 krad(Si) of Total Ionizing Dose and offers fast switching capabilities.

Key Features

  • -60 V voltage class and 38 mΩ RDS(on) value
  • Available in TO-252-3 package with matte tin leads
  • Qualified for space applications according to AEC-Q101 tests
  • Junction temperature range: -55°C to +175°C
  • Ideal for Fast Switching Applications

Infineon's radiation tolerant P-channel power MOSFET is perfect for fast switching applications in LEO satellites, offering reliable and efficient power conversion.

Key Applications for Radiation Tolerant Power Solutions

Infineon's NewSpace power solutions are ideal for a range of critical applications, including:

  • Power Conditioning Units (PCUs):
    Our radiation tolerant power MOSFETs enable efficient and reliable power conditioning, ensuring that spacecraft systems receive the clean power they need to operate effectively.

  • Power Distribution Units (PDUs):
    With their high reliability and radiation tolerance, our power MOSFETs are perfect for power distribution units, which require efficient and fault-tolerant power distribution to multiple spacecraft systems.

  • DC-DC Converters:
    Our power solutions are also well-suited for DC-DC converters, which play a critical role in converting power from one voltage level to another, while minimizing energy losses and ensuring reliable operation.

By leveraging Infineon's radiation tolerant power MOSFETs, spacecraft designers and engineers can create more efficient, reliable, and longer-lasting power systems for their LEO missions and constellations.

Documents

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