High-voltage GaN bidirectional switches

CoolGaN™ BDS 650 V G5 - monolithic bidirectional switches based on GaN technology

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Overview

This game-changing monolithic GaN switch can actively block voltage and current in both directions. Its innovative quasi-common drain design features a double gate structure, leveraging Infineon's proven rugged Gate Injection Transistor technology. This unique architecture enables the use of the same drift region to block voltages in both directions, resulting in a reduced die size compared to conventional back-to-back arrangements.

Key Features

  • 650 V bidirectional e-mode HEMT
  • Bidirectional blocking capability
  • Common-drain configuration
  • 2 gates with independent control

Products

About

The CoolGaN™ BDS 650 V G5 offers a significant leap forward in system efficiency and power density compared to traditional back-to-back unidirectional switch (UDS) solutions. By integrating two switches in a single device, this product enables designers to create more compact and efficient systems.

In solar microinverter, CoolGaN™ BDS 650 V G5 enables cost-effective single-stage isolated DC-link-less topologies, such as cycloconverter and matrix-type converter, replacing traditional designs based on back-to-back unidirectional switches. The resulting design, not requiring DC-link capacitor, offers higher efficiency and higher power density, buck-boost capability and bidirectional power flow.

Vienna-type converters, such as Vienna rectifiers, H4 PFC and single-phase Vienna, are widely used in the industry due to their simplicity and low component count. These topologies can benefit significantly from the adoption of CoolGaN™ HV BDS, by replacing existing back-to-back switches: designers can easily achieve higher switching frequencies and increase power density through the reduction of passive component sizes.

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

The CoolGaN™ BDS 650 V G5 offers a significant leap forward in system efficiency and power density compared to traditional back-to-back unidirectional switch (UDS) solutions. By integrating two switches in a single device, this product enables designers to create more compact and efficient systems.

In solar microinverter, CoolGaN™ BDS 650 V G5 enables cost-effective single-stage isolated DC-link-less topologies, such as cycloconverter and matrix-type converter, replacing traditional designs based on back-to-back unidirectional switches. The resulting design, not requiring DC-link capacitor, offers higher efficiency and higher power density, buck-boost capability and bidirectional power flow.

Vienna-type converters, such as Vienna rectifiers, H4 PFC and single-phase Vienna, are widely used in the industry due to their simplicity and low component count. These topologies can benefit significantly from the adoption of CoolGaN™ HV BDS, by replacing existing back-to-back switches: designers can easily achieve higher switching frequencies and increase power density through the reduction of passive component sizes.

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us

Documents

Documents

Design resources

Design resources

Developer community

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