IGBT bare dies

Our TRENCHSTOP™ IGBT combines the unique trench and field stop technology and is a benchmark in the Industry

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Overview

The IGBT portfolio includes the voltage range from 600 V up to 1700 V with several different versions, and is optimized for a wide range of applications like drives, renewable solar and wind energy, welding, and power supplies.

Key Features

  • Easy paralleling
  • Positive temperature coefficient
  • Soft turn-off
  • Low switching losses

Products

About

IGBT: a simple technology

The most basic function of an IGBT is the fastest possible switching of electric currents, thus achieving the lowest possible switching losses. As the name “Insulated Gate Bipolar Transistor” reveals, an IGBT is a bipolar transistor with an isolated gate structure; the gate itself is basically a MOSFET. Therefore, the IGBT combines the advantages of high current carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power based control of a MOSFET.

Controllable thermal properties

Today’s IGBTs are quite similar to what is considered the ideal switch. An ideal switch is characterized by zero current when turned off, and by zero voltage across the device when turned on. As a consequence, an ideal switch does not generate any losses, and therefore does not create heat. More IGBTs reach efficiency levels of > 99% for the individual switch. However, thermal management is an important topic that should not be neglected.

IGBT bare dies in discrete or module housings

Our IGBT chips are also available in pre-assembled discrete packages, called discrete IGBTs. They are available as single IGBTs or copacked with a freewheeling diode. In addition, a broad range of power modules are available. These larger arrangements form basic building blocks of power electronics, usually combining IGBT, diode dies, and other components in various topologies.

More about IGBT discretes
More about IGBT modules

IGBT: a simple technology

The most basic function of an IGBT is the fastest possible switching of electric currents, thus achieving the lowest possible switching losses. As the name “Insulated Gate Bipolar Transistor” reveals, an IGBT is a bipolar transistor with an isolated gate structure; the gate itself is basically a MOSFET. Therefore, the IGBT combines the advantages of high current carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power based control of a MOSFET.

Controllable thermal properties

Today’s IGBTs are quite similar to what is considered the ideal switch. An ideal switch is characterized by zero current when turned off, and by zero voltage across the device when turned on. As a consequence, an ideal switch does not generate any losses, and therefore does not create heat. More IGBTs reach efficiency levels of > 99% for the individual switch. However, thermal management is an important topic that should not be neglected.

IGBT bare dies in discrete or module housings

Our IGBT chips are also available in pre-assembled discrete packages, called discrete IGBTs. They are available as single IGBTs or copacked with a freewheeling diode. In addition, a broad range of power modules are available. These larger arrangements form basic building blocks of power electronics, usually combining IGBT, diode dies, and other components in various topologies.

More about IGBT discretes
More about IGBT modules

Documents

Documents

Design resources

Developer community

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