Gate Driver ICs

Power electronics applications employ switch technologies. And all power devices require optimum gate drive solutions. That’s why we offers more than 250 EiceDRIVER™ gate driver solutions to meet design requirements across the range of power semiconductor technologies and power conversion topologies.

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as IGBTs, MOSFETs, SiC MOSFETs, GaN HEMTs, and modules. Ideal solutions are available for hundreds of end applications in such markets as automotive, industrial motor drives, solar inverters, EV charging, robotics, UPS, server and telecom power supply, small and major home appliances, battery-driven applications, and high-voltage lighting.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options.

State-of-the-art discrete switch families of CoolMOS™ and OptiMOS™ silicon MOSFETs, TRENCHSTOP™ IGBTs, CoolGaN™ Gallium Nitride HEMTs, and CoolSiC™  Silicon Carbide MOSFETs as well as open frame modules such as Easy, Econo power modules, require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.

Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.