EiceDRIVER™ 200 V Level Shift Gate Driver ICs
Now including IRS2007S 200 V half-bridge gate driver with VCC & VBS UVLO ensuring reliable start-up operation.
Including Silicon-On-Insulator (SOI) and Junction Isolation (JI) offerings. We offer Gate driver ICs tailored for low voltage (24 V, 36 V, and 48 V) and medium voltage (60 V, 80 V, 100 V, and 120 V) motor control applications.
The 3-phase product family (6EDL04N02PR, 6ED003L02-F2) utilizes Infineon´s unique Silicon-on-Insulator (SOI) level shift technology to provide functional isolation with industry leading negative VS robustness and reduced level shift losses. A solution is also available with integrated Bootstrap Diodes (BSD) to reduce BOM cost, simplify layout, and reduce PCB size.
The IRS200x family utilizes our advanced junction isolated high-voltage IC technology to realize a compact, efficient and robust monolithic construction.
The IRS2005/7/8 family consists of four devices with VCC and VBS Under-voltage lockout (UVLO) protection. The IRS2007 and IRS2008 include integrated dead-time and shoot-through protection. The 200 V devices feature low quiescent currents. IRS2008 also features a shutdown input pin.
The IRS2005/7/8 200 V devices are offered in eight-pin DSO-8 or fourteen-pin 4 x 4 mm VQFN14 packages (IRS2005M) with various logic input options and standard pin-out configurations for high design flexibility and fast time to market. All devices are MSL2 qualified.
The 6EDxxxx three-phase devices are available in small foot print TSSOP-28 packages (6EDL04N02PR).