Silicon carbide CoolSiC™ MOSFETs

Based on volume experience and compatibility know-how, we introduced the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC power MOSFET offers a series of advantages. SiC CoolSiC™ MOSFET technology represents the best performance, reliability, and ease of use for system designers. SiC power transistors open up new degrees of flexibility for designers to harness never-before-seen levels of efficiency and reliability. High-voltage CoolSiC™ MOSFET technology has also provided impressive improvements in reverse recovery characteristics.

CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in 400 V, 650 V, 750 V, 1200 V, 1700 V, 2000 V, 2300 V and 3300 V voltage classes. The SiC MOSFET power modules come in three-level, fourpack, half-bridge, sixpack, and booster configurations.

CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics. Infineon’s unique CoolSiC™ MOSFET adds additional advantages:

Superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), a threshold voltage Vth of 4 V, and short-circuit robustness. This is the revolution you can rely on. All this results in a robust SiC MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.

The TO-247 4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247 3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and a robust design, as well as PressFIT connections. While low-power ranges can be ideally addressed with the Easy family, medium-power inverters of 250+ kW can best make use of the 62 mm package. The HybridPACK™ Drive CoolSiC™ MOSFETs are AQG-324 qualified and optimized for high-power automotive traction inverters of 180+ kW. It is an easy-to-mount sixpack module for direct water cooling with a pin-fin baseplate and supports an efficient and high-volume-optimized assembly process.