Overview

Infineon 750 V CoolSiC™ Silicon Carbide MOSFET discretes offers best in class robustness to parasitic turn-on and mature gate oxide technology, enables exceptional perfomance in hard-switching topologies like Totem Pole, ANPC, Vienna Rectifier and FCC . Moroever the substantial reduction in Output Capacitance (Coss) in G2 enable to operate at higher switching frequency in soft switching topologies, such as Cycloconverter, CLLC, DAB and LLC. It is perfectly tailored for applications with stringent requierments in terms of reliabilitys, power density and efficien such as On-board charger, DC-DC converter, DC-AC converter, as well as AI Servers, Solar inverter and EV charging. where Q-DPAK enable to leverage the intrinsic fast switching speed of SiC, while guarantees power dissipation capability of approximately 20 W.

Key features
  • Through-hole and SMD packages
  • Integrated Kelvin source
  • Beyond AEC Q101 qualification for Automotive grade devices; JEDEC qualification for Industrial grade devices
  • high portfolio granularity RDS(on) 8 mΩ to 140 mΩ and packages
Applications
EV power conversion & OBC
EV charging
Server power supply units (PSU)
Photovoltaic

Products

Products

About

Learn more about the 750 V CoolSiC™ automotive MOSFET

For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

Learn more
750 V Silicon Carbide MOSFET benefits
  • Highly robust 750 V technology, 100% avalanche tested
  • Best-in-class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss and RDS(on) x QG
  • Unique combination of low Crss/Ciss and high VGS(th)
  • Infineon proprietary die attach technology
  • Driver source pin available
More about CoolSiC MOSFETS in discrete housings
Q-DPAK Top side cooling package

Top-side cooling (TSC) devices are surface-mounted power devices that are soldered onto a printed circuit board (PCB). The heat generated by the semiconductor die is extracted through the top of the package to an attached coldplate.
TSC power packages are a solution to improve thermal and electrical performance. These packages also help increase power density and reduce manufacturing effort.

Learn more about the 750 V CoolSiC™ automotive MOSFET

For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

Learn more

750 V Silicon Carbide MOSFET benefits
  • Highly robust 750 V technology, 100% avalanche tested
  • Best-in-class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss and RDS(on) x QG
  • Unique combination of low Crss/Ciss and high VGS(th)
  • Infineon proprietary die attach technology
  • Driver source pin available
More about CoolSiC MOSFETS in discrete housings

Q-DPAK Top side cooling package

Top-side cooling (TSC) devices are surface-mounted power devices that are soldered onto a printed circuit board (PCB). The heat generated by the semiconductor die is extracted through the top of the package to an attached coldplate.
TSC power packages are a solution to improve thermal and electrical performance. These packages also help increase power density and reduce manufacturing effort.

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