Overview

Infineon 2000 V CoolSiC™ Silicon Carbide MOSFET discretes and modules were especially developed for applications such as EV-Charging, Photovolatic, Energy Storage and more. The products have been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions.

Key features
  • On-resistance ratings up to 2.6 mΩ
  • Perfect fit for 1500V DC-link
  • Higher power density
  • Reduced system complexity
  • Low switching & conduction losses
  • Wide gate source voltage range
  • Maximum Tvj,op of 175° C
  • Highest threshold voltage of Vth>4V
Applications
EV charging
Traction
Energy storage systems
Solid-state circuit breaker
Photovoltaic

Products

Products

About

2000 V CoolSiC™ MOSFET

Infineon's 2000V CoolSiC™ modules and discretes are a family of silicon carbide (SiC) power semiconductor devices designed to provide high power density, efficiency, and reliability in a wide range of applications. They come with CoolSiC™ technology, which enables the development of high-voltage power devices with improved performance, and reduced losses.

The 2000V CoolSiC™ modules and discretes are designed to operate at high voltages, making them suitable for applications such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. These devices offer a range of benefits, including high switching frequencies, low switching losses, and high thermal conductivity, making them ideal for high-power applications.

One of the key advantages of Infineon's 2000V CoolSiC™ modules and discretes is their ability to operate at high temperatures, making them suitable for use in harsh environments. 

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings
CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well. Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings
CoolSiC™ MOSFETs Generation 2

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

 

More about CoolSiC™ MOSFETs Generation 2

2000 V CoolSiC™ MOSFET

Infineon's 2000V CoolSiC™ modules and discretes are a family of silicon carbide (SiC) power semiconductor devices designed to provide high power density, efficiency, and reliability in a wide range of applications. They come with CoolSiC™ technology, which enables the development of high-voltage power devices with improved performance, and reduced losses.

The 2000V CoolSiC™ modules and discretes are designed to operate at high voltages, making them suitable for applications such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. These devices offer a range of benefits, including high switching frequencies, low switching losses, and high thermal conductivity, making them ideal for high-power applications.

One of the key advantages of Infineon's 2000V CoolSiC™ modules and discretes is their ability to operate at high temperatures, making them suitable for use in harsh environments. 

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well. Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings

CoolSiC™ MOSFETs Generation 2

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

 

More about CoolSiC™ MOSFETs Generation 2

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