Overview

Infineon 1200 V CoolSiC™ Silicon Carbide MOSFET discretes and modules were especially developed for applications such as Photovoltaic, Energy Storage, EV-Charging, UPS, Industrial Drives and many more. The products enable the accelerated system design of more cost optimized, efficient, compact, and reliable solutions.

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Products

About

1200 V CoolSiC™ MOSFET

Infineon's 1200V CoolSiC™ modules and discretes are a cutting-edge technology designed to revolutionize the power electronics industry. These innovative products are built on the foundation of Silicon Carbide (SiC), a material that offers superior performance and efficiency compared to traditional Silicon (Si) devices. The 1200V CoolSiC™ portfolio is specifically designed to cater to the growing demand for high-power, high-efficiency, and compact power conversion systems.

One of the key benefits of Infineon's 1200V CoolSiC™ modules and discretes is their ability to operate at higher voltage and temperature ranges, making them ideal for fast switching applications such as EV-Charging infrastructure, Photovoltaic , Energy Storage as well as UPS and SSB, driven by the growing demand in AI. Additonally they are a perfect fit for power supply in the automotive industry (OBC, Heater, Compressor...). The SiC technology enables these devices to achieve higher switching frequencies, reduced losses, and improved thermal performance, resulting in increased system efficiency, reliability and system cost improvement.

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well. Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC™ MOSFETS in module housings

CoolSiC™ MOSFETs Generation 2

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

More about CoolSiC™ MOSFETs Generation 2

Automotive CoolSiC™ MOSFET modules

Infineon offers a wide range of CoolSiC™ MOSFET automotive power modules for hybrid and electric vehicles applications: traction inverter (to convert the DC from the high voltage battery to AC for the electric motors),  on-board battery charger, auxiliary inverters, HV/LV DC-DC converter and specific Fuel-Cell Electric Vehicles (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter

More about automotive qualified CoolSiC™ modules

1200 V CoolSiC™ MOSFET

Infineon's 1200V CoolSiC™ modules and discretes are a cutting-edge technology designed to revolutionize the power electronics industry. These innovative products are built on the foundation of Silicon Carbide (SiC), a material that offers superior performance and efficiency compared to traditional Silicon (Si) devices. The 1200V CoolSiC™ portfolio is specifically designed to cater to the growing demand for high-power, high-efficiency, and compact power conversion systems.

One of the key benefits of Infineon's 1200V CoolSiC™ modules and discretes is their ability to operate at higher voltage and temperature ranges, making them ideal for fast switching applications such as EV-Charging infrastructure, Photovoltaic , Energy Storage as well as UPS and SSB, driven by the growing demand in AI. Additonally they are a perfect fit for power supply in the automotive industry (OBC, Heater, Compressor...). The SiC technology enables these devices to achieve higher switching frequencies, reduced losses, and improved thermal performance, resulting in increased system efficiency, reliability and system cost improvement.

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well. Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC™ MOSFETS in module housings

CoolSiC™ MOSFETs Generation 2

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

More about CoolSiC™ MOSFETs Generation 2

Automotive CoolSiC™ MOSFET modules

Infineon offers a wide range of CoolSiC™ MOSFET automotive power modules for hybrid and electric vehicles applications: traction inverter (to convert the DC from the high voltage battery to AC for the electric motors),  on-board battery charger, auxiliary inverters, HV/LV DC-DC converter and specific Fuel-Cell Electric Vehicles (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter

More about automotive qualified CoolSiC™ modules

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