Overview

XHP™ 2 CoolSiC™ MOSFET 2300 V were especially developed for applications addressing raising trend of 1500 V DC-link, such as Renewables, Energy storage systems and more, offering outstanding performance with robust .XT interconnection technology for enhanced lifetime with best in class reliability.

Key features
  • CoolSiC™ MOSFET 2.3 kV
  • Integrated body diode
  • Low-inductive housing XHP™ 2
  • .XT interconnection technology
  • Symmetrical module design
  • High surge-current capability
  • Short-circuit capability
  • Low switching & conduction losses
  • Tvj=175°C continuous
  • 4 kV & 6 kV isolation voltage
Applications
Wind
Photovoltaic
Battery storage systems
Hydrogen electrolysis
Traction

Products

Products

XHP™ 2 CoolSiC™ MOSFET 2.3kV with .XT interconnection technology

2.3 kV fast - switching, energy - efficient Silicon Carbide CoolSiC™ MOSFETs in low-inductive XHP™ 2 housing with half-bridge topology and robust .XT interconnection technology for enhanced lifetime are available in different variants, with Rdson from0.95 mΩ up to 1.27 mΩ.

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well.

Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings

XHP™ 2 CoolSiC™ MOSFET 2.3kV with .XT interconnection technology

2.3 kV fast - switching, energy - efficient Silicon Carbide CoolSiC™ MOSFETs in low-inductive XHP™ 2 housing with half-bridge topology and robust .XT interconnection technology for enhanced lifetime are available in different variants, with Rdson from0.95 mΩ up to 1.27 mΩ.

CoolSiC™ MOSFET Modules

CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.

 Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well.

Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.

More about CoolSiC MOSFETS in module housings

Documents

Documents