Overview

Infineon 1700 V CoolSiC™ Silicon Carbide MOSFET discretes are optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Key features
  • Up to 1700 V
  • On-resistance ratings up to 1000 mΩ.
  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage compatible with fly-back controllers
  • Fully controllable dV/dt for EMI optimization
  • Available in two package variants: TO-247-3 High creepage clearance package and TO-263-7 (D²PAK) package
  • XT interconnection technology (TO-247-3 HCC portfolio)
Applications
EV charging
DIN rail power supply solutions
Industrial motor drives and controls
General purpose motor drive
Energy storage systems
Uninterruptible power supplies (UPS)
3-phase string inverter solutions

Products

Products

About

1700 V CoolSiC™ MOSFET

The CoolSiC™ MOSFET 1700 V is available in two package variants -  in a TO-247-3-HCC package and  a TO-263-7 package. The product family suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller and no need for a Gate driver IC. 

Auxiliary power supplies can be implemented with either TO-247-3 or SMD packages depending on your preference. One avantage of the TO-247 package is the easy plug & play of Si MOSFET based solutions.

The TO-263-7 package supports easy assembly without need of heatsink. It minimize the part counts and reduce system cost.

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings

1700 V CoolSiC™ MOSFET

The CoolSiC™ MOSFET 1700 V is available in two package variants -  in a TO-247-3-HCC package and  a TO-263-7 package. The product family suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller and no need for a Gate driver IC. 

Auxiliary power supplies can be implemented with either TO-247-3 or SMD packages depending on your preference. One avantage of the TO-247 package is the easy plug & play of Si MOSFET based solutions.

The TO-263-7 package supports easy assembly without need of heatsink. It minimize the part counts and reduce system cost.

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort. 

More about CoolSiC MOSFETS in discrete housings

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