Active and preferred
RoHS Compliant
Lead-free

S79FL01GSDSBHBC13

Data Sheet
package
software

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S79FL01GSDSBHBC13
S79FL01GSDSBHBC13
Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    1 GBit
  • Family
    FL-S
  • Interface Bandwidth
    80 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / 80
  • Interfaces
    Dual-Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
Recommended
OPN
S79FL01GSDSBHBC13
Product Status active and preferred
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15078)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15078)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S79FL01GSDSBHBC13 is a 1 Gb (128 MB) Dual-Quad SPI NOR flash memory using 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports Byte-wide (8-bit) data via Dual-Quad I/O, with up to 160 MB/s DDR Quad SPI read and 3 MB/s program speeds. Operating from 2.7 V to 3.6 V, it offers 100,000 program-erase cycles, 20-year data retention, and advanced security features.

Features

  • 1 Gb (128 MB) density
  • Dual-Quad SPI interface
  • 104 MHz Quad Read, 160 MB/s DDR Quad Read
  • 1024-byte page programming buffer
  • Internal ECC with single bit error correction
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 2048-byte one-time programmable (OTP) array
  • Block and advanced sector protection
  • 2.7 V to 3.6 V core supply voltage
  • Industrial temperature range (–40°C to +85°C)
  • Input signal overshoot tolerance to VCC+2.0

Benefits

  • High density enables large code/data storage
  • Dual-Quad SPI boosts data throughput
  • 160 MB/s DDR read accelerates system boot
  • Large buffer speeds up programming
  • ECC improves data reliability
  • High endurance reduces maintenance
  • Long retention ensures data integrity
  • OTP supports secure device authentication
  • Flexible protection enhances data security
  • Wide voltage range eases power design
  • Industrial temp range suits harsh settings
  • Overshoot tolerance improves signal

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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