Active and preferred
RoHS Compliant
Lead-free

ISP12DP06NM

P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
Data Sheet
package
ea.
in stock

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ISP12DP06NM
ISP12DP06NM
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.24
  • ID (@25°C) max
    -2.8 A
  • IDpuls max
    -11.2 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    SOT-223
  • Polarity
    P
  • Ptot max
    4.2 W
  • QG (typ @10V)
    -20.2 nC
  • RDS (on) (@10V) max
    125 mΩ
  • Special Features
    Small Signal
  • VDS max
    -60 V
  • VGS(th)
    -2.1 V to -4 V
Recommended
OPN
ISP12DP06NMXTSA1
Product Status active and preferred
Infineon Package
PG-SOT223-4
Package Name SOT-223
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-SOT223-4
Package Name SOT-223
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ P-Channel MOSFET 60 V in SOT-223 package targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in normal level featuring a wide RDS(on) range and improves efficiency at low loads.

Features

  • VDS = -60V
  • Wide RDS(on) range
  • Logic level availability

Benefits

  • Easy interface to MCU
  • Enhanced efficiency at low loads
  • Fast switching
  • Avalanche ruggedness

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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