Active and preferred
RoHS Compliant

IRFB5615

150V Single N-Channel Digital Audio Power MOSFET in a TO-220 package
ea.
in stock

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IRFB5615
IRFB5615
ea.

Product details

  • Budgetary Price €/1k
    0.48
  • ID (@25°C) max
    35 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    144 W
  • Qgd
    9 nC
  • QG (typ @10V)
    26 nC
  • RDS (on) (@10V) max
    39 mΩ
  • RthJC max
    1.04 K/W
  • Tj max
    175 °C
  • VDS max
    150 V
  • VGS(th)
    4 V
  • VGS max
    20 V
OPN
IRFB5615PBF
Product Status active and preferred
Infineon Package
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Dual N-chan. Normal Level
  • High-current carry capability package
  • Industry standard qualification level
  • High performance in low freq applicants.
  • Increased power density
  • Optimal device for their application

Benefits

  • Drop-in replacement with standard pinout
  • High-current carry capability package
  • Industry standard qualification level
  • High performance, low-frequency
  • Increased power density
  • Flexibility for optimal device selection

Documents

Design resources

Developer community

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