Active
RoHS Compliant
Lead-free

IRFB260N

200V Single N-Channel Power MOSFET in a TO-220 package
Data Sheet
package
ea.
in stock

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IRFB260N
IRFB260N
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.99
  • ID (@25°C) max
    56 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    380 W
  • Qgd
    67 nC
  • QG (typ @10V)
    150 nC
  • RDS (on) (@10V) max
    40 mΩ
  • RthJC max
    0.4 K/W
  • Tj max
    175 °C
  • VDS max
    200 V
  • VGS(th)
    3 V
  • VGS max
    20 V
Recommended
OPN
IRFB260NPBF
Product Status active
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
TO220
Package Name TO220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard through-hole power
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification
  • High performance, low-frequency
  • Standard pinout, drop-in replacement
  • High current capability

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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