Active and preferred
RoHS Compliant

IPN70R2K0P7S

Combining excellent performance and ease-of-use
ea.
in stock

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IPN70R2K0P7S
IPN70R2K0P7S
ea.

Product details

  • Budgetary Price €/1k
    0.14
  • Ciss
    130 pF
  • Coss
    2 pF
  • ID max
    3 A
  • ID (@25°C) max
    3 A
  • IDpuls max
    5.7 A
  • Mounting
    SMT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    SOT-223-3
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    6 W
  • Qgd
    1.5 nC
  • QG
    3.8 nC
  • QG (typ @10V)
    3.8 nC
  • RDS (on) (@10V) max
    2000 mΩ
  • RDS (on) max
    2000 mΩ
  • RthJA max
    160 K/W
  • Special Features
    price/performance
  • VDS max
    700 V
  • VGS(th)
    3 V
OPN
IPN70R2K0P7SATMA1
Product Status active and preferred
Infineon Package
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOT-223-3
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 700 V CoolMOS™ P7 N-channel superjunction (SJ) MOSFET series has been developed to serve the forthcoming trends in flyback topologies. The technology addresses the low-power SMPS market, mainly focusing on mobile phone chargers and notebook adapters, but suitable for power supplies used within lighting applications, home entertainment (TV, game consoles, or audio), as well as auxiliary power supplies.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • integrated gate resistor
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • better control
  • high efficiency @ hard switching
  • higher power density
  • MOSFET suits hard & resonant topologies
  • Enables high power density
  • Low cost DPak alternative

Documents

Design resources

Developer community

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