not for new design
RoHS Compliant
Lead-free

IMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package
Data Sheet
package
board
ea.
in stock

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IMW120R045M1
IMW120R045M1
ea.
Data Sheet

Product details

  • Ciss
    1900 pF
  • Coss
    115 pF
  • ID (@25°C) max
    52 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-247-3
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot (@25°C) max
    228 W
  • Qgd
    13 nC
  • QG (typ @15V)
    52 nC
  • Qualification
    Industrial
  • RDS (on) (@15V)
    45 mΩ
  • RDS (on) (@ Tj = 25°C)
    45 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.66 K/W
  • Technology
    CoolSiC™ G1
  • Tj max
    175 °C
  • VDS max
    1200 V
OPN
IMW120R045M1XKSA1
Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSiC™ MOSFET discrete 1200 V, 45 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Features

  • Best in class switching
  • Best in class conduction losses
  • High threshold voltage, Vth > 4 V
  • 0V turn-off gate voltage
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Temp. indep. turnoff switch. losses

Documents

Documents

Design resources

Partner solutions

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