Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

IMW120R045M1

END OF LIFE
CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

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IMW120R045M1
IMW120R045M1

Product details

  • Ciss
    1900 pF
  • Coss
    115 pF
  • ID (@25°C) max
    52 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO-247-3
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot (@25°C) max
    228 W
  • Qgd
    13 nC
  • QG (typ @15V)
    52 nC
  • Qualification
    Industrial
  • RDS (on) (@15V)
    45 mΩ
  • RDS (on) (@ Tj = 25°C)
    45 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.66 K/W
  • Technology
    CoolSiC™ G1
  • Tj max
    175 °C
  • VDS max
    1200 V
OPN
IMW120R045M1XKSA1
Product Status discontinued
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
CoolSiC™ MOSFET discrete 1200 V, 45 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Features

  • Best in class switching
  • Best in class conduction losses
  • High threshold voltage, Vth > 4 V
  • 0V turn-off gate voltage
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Temp. indep. turnoff switch. losses

Documents

Design resources

Developer community

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