coming soon
RoHS Compliant
Lead-free

IGC016K10S2

CoolGaN™ Transistor 100 V G5 in PQFN 3x5, 1.3 mΩ | with integrated Schottky diode
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IGC016K10S2
IGC016K10S2

Product details

  • ID (@25°C) max
    108 A
  • IDpuls (@25°C) max
    510 A
  • Package
    PQFN
  • QG
    16 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    1.3 mΩ
  • VDS max
    100 V
OPN
IGC016K10S2XTMA1
Product Status coming soon
Infineon Package
PG-TSON-6
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status coming soon
Infineon Package
PG-TSON-6
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IGC016K10S2 is a 100 V normally-off e-mode GaN power transistor in a small 3 x 5 mm package with integrated Schottky diode. With this integrated feature, reverse conduction losses are minimized and even higher system efficiencies can be reached.

Features

  • 100 V e-mode power transistor
  • Monolithically integrated Schottky diode
  • Top-side cooled 3x5 mm package
  • High power capability
  • No reverse recovery charge
  • Ultra-low gate and output charge
  • Qualfied according to JEDEC
  • Ultrafast switching
  • Low reverse conduction voltage
  • Exposed die for thermal excellene
  • Moisture rating MSL1

Benefits

  • Space saving and highly robust package
  • Reduces overall component count
  • Increased ease-of-use circuit design
  • Lower BoM cost
  • Excellent reliability
  • Highest efficiency

Documents

Documents

Design resources

Partner solutions

Developer community

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