IAUTN10S7N013
NEW
Active and preferred
RoHS Compliant

IAUTN10S7N013

NEW
100 V, N-Ch, 1.26 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 7
package

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IAUTN10S7N013
IAUTN10S7N013


Product details

  • ID (@25°C) max
    349 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PG-HSOF-8
  • Planned to be available until at least
    2040
  • Polarity
    N
  • QG (typ @10V) max
    187 nC
  • QG (typ @10V)
    144 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    1.26 mΩ
  • Technology
    OptiMOS™ 7
  • VDS max
    100 V
  • VGS(th) range
    2.3 V to 3.2 V
  • VGS(th)
    2.8 V

Recommended
OPN
IAUTN10S7N013ATMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT
IAUTN10S7N013 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V.This product is offered in the TOLL 10x12mm2 power package, which Infineon first introduced to the market. It is designed, qualified and manufactured specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Features

  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • High power, high current TOLL package
  • Low package resistance and inductance
  • Excellent thermal performance
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Benefits

  • Low conduction losses
  • Superior switching performance
  • Higher power density
  • Higher efficiency
  • Increased design ruggedness
  • Well-suited for parallel placement
  • Could reduce MOSFET part count on BOM
  • Quality and robustness for automotive
  • Potential for second source supplier
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Design resources

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